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DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference PIDS Status and Key Issues: 2004 and 2005 ITRS Peter M. Zeitzoff for PIDS Technology.

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Presentation on theme: "DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference PIDS Status and Key Issues: 2004 and 2005 ITRS Peter M. Zeitzoff for PIDS Technology."— Presentation transcript:

1 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference PIDS Status and Key Issues: 2004 and 2005 ITRS Peter M. Zeitzoff for PIDS Technology Working Group ITRS Open Meeting July 14, 2004 San Francisco

2 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference PIDS Scope PIDS = Process Integration, Devices, and Structures Main concerns –Process integration and full process flows –MOSFET and passive devices and structures Device physical and electrical characteristics and requirements –Broad issues of device and circuit performance and power dissipation, particularly as they drive overall technology requirements –Reliability

3 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference PIDS Subcategories Logic: both high performance and low power logic –Low power focused on mobile applications Memory: both DRAM and Non-volatile memory Reliability RF and mixed-signal/analog technology for wireless communications –To be discussed by Margaret Huang in a separate presentation Emerging Research Devices: focused on devices and technologies for 2009 and beyond –To be discussed in a separate presentation by Jim Hutchby Separate in 2005

4 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Status 2004 PIDS section: only minor updates and corrections from 2003 version Beginning preparation for 2005 PIDS

5 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Non-volatile memory (NVM) –Flash (NOR and NAND), FeRAM, SONOS, and MRAM –Flash issues Difficult scaling issues for interpoly dielectric and tunneling dielectric thicknesses Does flash F catch up with or even surpass DRAM half pitch? –Possible transfer of phase change and floating body memory from ERD to PIDS in 2005 DRAM –2005 and beyond: scaling of DRAM half pitch, a factor, etc. –New survey of key DRAM companies to be done –What was DRAM half pitch in 2003 and 2004 Memory

6 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Top 5 Near-Term Reliability Challenges High k Gate Dielectrics –Dielectric breakdown; Transistor instability Metal Gate –Ion drift, VTH stability, oxidation; thermal-mechanical Cu/ Low k –Electromigration and voiding; stability of interfaces; TDDB –Impact of porous, weaker, less thermally conductive dielectrics Packaging –Solder bumps; fracture; EM in packaging; CTE mismatch Design & Test for Reliability –Reliability simulation; Reliability screens Challenges are NOT listed in priority order

7 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Reliability requirements on a per chip basis are constant –Relative reliability required per transistor becomes more stringent with scaling –Relative reliability required per meter of interconnect becomes more stringent with scaling Reliability challenges are associated with new materials and structures: high-k/metal gate stack, copper/low-k, elevated S/D, ultra-thin body fully depleted SOI, multiple-gate, etc. –Reliability models, data, and reliability qualification should predate production start –Detailed report from RTAB of International SEMATECH on key reliability challenges will be linked Reliability

8 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Logic: Scaling Approach and Categories Simple models capture essential MOSFET physics embedded in a spreadsheet –Verified vs. MASTAR (sophisticated device model from STM), literature data, and PIDS member knowledge –Initial choice of scaled MOSFET parameters is made –Using spreadsheet, MOSFET parameters are iteratively varied to meet ITRS targets This is one optimal scaling scenario –2003 models more comprehensive and accurate than in 2001 ITRS Types of Logic –High Performance: target is historical 17%/year transistor performance increase –Low Power (especially for mobile applications): target is specific, low level of leakage current Low Standby Power (LSTP): very low power (i.e., cellphone) Low Operating Power (LOP): low power, rel. high performance (i.e., notebook computer, video camcorder

9 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Calendar Year (ps) HP Require- ment LSTP Calendar Year E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 ( A/ m) HP LSTP Requirement DELAY (lower delay = higher speed) Leakage Current (higher leakage = higher standby power) Low Standby Power (LSTP) & High Performance (HP)

10 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference NMOSFET Performance and Leakage Scaling Isd,leak: HP Isd,leak: LOP Isd,leak: LSTP, HP, LSTP, LOP 17%/year performance improvement rate

11 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Key PIDS Logic Issues for 2005 ITRS Overall 1/ and I sd,leak scaling scenarios for high- performance, LSTP, and LOP –Particularly LOP: definition, tradeoff between and fit of LOP between LSTP and high-performance logic Relations between I sd,leak and J g,limit –J g,limit = (I sd,leak /Lg) x ([Temp Factor]/[Stack & Overlap Factor]) –Stack & Overlap Factor = 3very rough estimate More attention to PMOSFETs Timeline of potential solutions

12 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Fully Depleted SOI HP The CMOS Change Crunch Multiple, Big Changes Over Next 7 Years Multi Gate MOSFET HP HP Strained Si Metal Gate HP First Year of Volume Production High k Gate Dielectric HP LP HP = High Performance Applications = Low Power Applications Driver:

13 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference LSTP: EOT and Gate Leakage Current Density (Jg) Scaling 1.E+0325 Calendar Year 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E Jg (A/cm2) EOT (A) EOT Jg,max Jg,sim,SiON

14 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Key PIDS Logic Issues for 2005 ITRS (cont.) Review modeling –Fringe and overlap capacitance –Scaling of mobility enhancement –Modeling and scaling of enhancements due to advanced devices (single- and multiple-gate) MASTAR modeling will be important here –Quasi-ballistic transport With FEP –Improved modeling of S/D: R sd, S/D lateral abruptness, x j, and halo –Poly depletion and quantum effects

15 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Review Timing of Key Logic Technology Innovations These lnnovations are required to meet scaling performance goals Enhanced mobility strained Si –High-performance (HP): 2004 (90 nm node) –LOP & LSTP: 2008 (57 nm node) High-k gate dielectric –LSTP and LOP: 2006 (70 nm node) –HP: 2007 (65 nm node) Metal gate electrode: 2007 (65 nm node) for High- Performance, 2008 (57 nm node) for LOP and LSTP Advanced MOSFETs: FDSOI, probably followed by double gate or multi gate –2008 (57 nm node): HP –2012 (35 nm node): LOP & LSTP Enhanced v sat (quasi-ballistic transport) –HP: 2012 (35 nm node) –LOP: 2015 (25 nm node) –LSTP: 2018 (18 nm node)

16 DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference Timeliness: many major changes in a short time High-performance logic: performance high leakage Low power logic: low leakage reduced performance High-k gate dielectric required initially for low-power logic; other major changes required first for high-performance logic Advanced MOSFET structures needed with scaling (strained Si, UTB-FD SOI, FinFETs, etc.) –To meet I on versus I off –SOI reduces junction leakage and capacitance –To control short channel effects Summary of Key Logic Issues


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