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FEP ITRS Major Issues April 19-20 Stresa, Italy. 2004 ITRS FEP- Major Issues for 2004/5 Resolution of gate electrode CD control issue Doping & Thermal.

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Presentation on theme: "FEP ITRS Major Issues April 19-20 Stresa, Italy. 2004 ITRS FEP- Major Issues for 2004/5 Resolution of gate electrode CD control issue Doping & Thermal."— Presentation transcript:

1 FEP ITRS Major Issues April Stresa, Italy

2 2004 ITRS FEP- Major Issues for 2004/5 Resolution of gate electrode CD control issue Doping & Thermal Film requirements for enhanced bulk and non-classical CMOS devices Valid requirements require device design for each technology node TWG does not have the resources to do this job Possible extension of bulk device doping requirements to 2010 Adding requirements for PMOS devices Gate leakage Potential Refinement of Gate Leakage requirements Adding requirements for emerging memory devices Floating body DRAM Phase change memory MRAM

3 2004 ITRS Next Generation Wafers –Research on 450mm wafers has not been initiated –2011 Introduction target is in jeopardy –This can become a future crisis if not addressed FEP- Major Issues for 2004/5


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