1. RF and AMS Technologies for Wireless Communications Working Group 1 2006 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group April 2006

2. RF and AMS Technologies for Wireless Communications Working Group 2 Objectives Use wireless IC as system / technology driver for ITRS Address intersection of Si-based technologies with III-V compound semiconductors and other potential technologies (MEMS, BAW, Passives,..) Present technical challenges and requirements for AMS & RF IC technologies in wireless applications for cellular phones, WLAN/WPAN, automotive radar, and phased array RF systems, frequencies 0.8-100GHz Major update in 2005 : Divided Working Group into 5 sub-groups CMOS for RF and AMS (0.8-10 GHz) Bipolar for RF and AMS (0.8-10 GHz) Power Amplifiers and Power Management (0.8-10GHz) Passives for RF&AMS and PA (0.8-10GHz) Millimeter Wave (10-100GHz)

3. RF and AMS Technologies for Wireless Communications Working Group 3 Working Strategy Divided in two frequency bands : 0.8 – 10 GHz (CMOS, Bipolar, Passives, PA) 10 – 100 GHz (mm-Wave) Communication System - Protocols - Standards - Frequencies Communication System - Protocols - Standards - Frequencies Circuit Figures-of-Merit - A/D, D/A - LNA - VCO - Synthesizer - Power Amplifier Circuit Figures-of-Merit - A/D, D/A - LNA - VCO - Synthesizer - Power Amplifier Device Figures-of-Merit -Device Requirements -Potential Solutions -Challenges -Cross-working group aspects Device Figures-of-Merit -Device Requirements -Potential Solutions -Challenges -Cross-working group aspects Technology Roadmap for Devices : Material system : Si, SiGe, GaAS, InP, SiC, GaN Device structures : MOSFET, LDMOS, HBT, MESFET, PHEMT, MHEMT, on-chip passives

4. RF and AMS Technologies for Wireless Communications Working Group 4 2006 Organization Chair : Margaret Huang, Freescale28 Members /last year 34 Co-chairs : Bin Zhao, Skyworks Jan-Erik Mueller, Infineon Editor : Herbert Bennett, NIST Subgroup (1) : CMOS (11)Peter Cotrell, IBM Subgroup (2) : Bipolar (6)Marco Racanelli, Jazz Subgroup (3) : Passives (5) Sam Shichijo, TI Subgroup (4) : PA & power management (4)P. Zampardi, Skyworks Chuck Weitzel, Freescale Subgroup (5) : Millimeter Wave System (5)Tony Immorlica, BAE Systems

5. RF and AMS Technologies for Wireless Communications Working Group 5 Expected updates in the following areas : –GaN : Reflect higher level of progress –CMOS Depending strongly on updates in LSTP roadmap (RF CMOS follows LSTP roadmap with 1 year lag) Introduction of high-k / metal gate important for analog/RF CMOS : –1/f noise –Matching performance –Leakage 2006 Requirement Tables Updates

6. RF and AMS Technologies for Wireless Communications Working Group 6 Assembly & Packaging –Embedded passives requirements to be provided to Assy&Pkg : – volume product (e.g. GSM) – low power/short range product (e.g. Bluetooth) – mm-wave product (car radar or 60 GHz UWB) –Assy&Pkg want to expand the RF part of their chapter Request for discussion on boundary between Wireless chapter and Assy&Pkg Design –Discussed update of SiP design flow : – Focus has been on SoC design flow – Design will check with EDA vendors –Discussed impact of digital radio on analog/RF CMOS requirements table (to be continued) 2006 Cross-TWG Focus

7. RF and AMS Technologies for Wireless Communications Working Group 7 Test –Had discussion on cost-effective testing of RF ICs – Follow-up in July Meeting –Discussed evolution of number of RF pins : – Impact of multi mode – Re-use of blocks (broadband) PIDS –Update needed for LSTP roadmap –Update needed for high-k / metal gate introduction –I/O devices are not covered in their roadmap : – Re-use for analog versus dedicated optimization 2006 Cross-TWG Focus

8. RF and AMS Technologies for Wireless Communications Working Group 8 Signal isolation Optimizing analog/RF CMOS devices with scaled technologies: mismatch, 1/f noise, and leakage with high-k gate dielectrics ; voltage gain High density integrated passive element scaling and use of new materials: Q-factor value for inductors matching and linearity for capacitors High range varactors for UWB Reduced power supply voltages: degradation in SNR and signal distortion performance for AMS Reduced device breakdown voltage in scaled technologies Compound semiconductor substrate quality, especially for SiC Larger size compound substrates [GaAs, SiC and InP] for lower chip costs and compatibility with silicon processing equipment Difficult Challenges (1)

9. RF and AMS Technologies for Wireless Communications Working Group 9 Epitaxial layers in compound semiconductors engineering to relieve stress in heteroepitaxy Non-linear and 3D Electromagnetic models for accurate design and simulation Difficulty and cost of integrating various analog/RF and digital functions on a chip or in a module CAD solution for Integrated Radio SIP design (chip, passive, component, package, tool compatibility, model accuracies) Difficult Challenges (2)