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Work in progress – do not publish RF&A/MS Summer 2012 Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives.

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Presentation on theme: "Work in progress – do not publish RF&A/MS Summer 2012 Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives."— Presentation transcript:

1 Work in progress – do not publish RF&A/MS Summer 2012 Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives Outlook

2 Work in progress – do not publish RF&A/MS Chapter Analog - carrier Frequency bands LF Analog (0-0.4GHz)RF (0.4-30GHz)mm-wave (30-300GHz)THz(>300GHz) Example applications Automotive controlsCellular60GHz point-to-pointNo products yet On-chip regulatorsWLANImagingCoordinate with ERD Power managementSerDesAutomotive radar ADC,DACWireless backhaul Broadened scope in 2011 to include analog applications -Described in Mixed-Signal section of System Drivers chapter -Reviewing added scope for 2013: higher voltages, heterogeneous integration -Only minor table updates for 2012 Chapter organization is aligned by device technology -CMOS, Si Bipolar, III-V, HVMOS, Passives Close cross-TWG interaction with -A&P, Design/SysDrivers, ERD, Interconnect, MEMs, PIDS

3 Work in progress – do not publish Membership Analog Devices Ali Eshraghi David Robertson Craig Wilson AMD Emerson Fang Freescale Jay John, Jiangkai Zuo Fujitsu Toshiro Futatsugi Hitachi Ltd. Digh Hisamoto HRL James Li IBM Jack Pekarik, Dawn Wang, Mattias Dahlstrom(CMOS), Jean-Olivier Plouchart, Natalie Feilchenfeld(HVMOS) IEEE Anthony Immorlica Jr. ITRS Linda Wilson TowerJazz Semiconductor Ed Preisler NIST Herbert Bennett NXP Peter Magnèe OMMIC Marc Rocchi PMC-Sierra Brian Gerson Hormoz Djahanshahi Raytheon Tom Kazior (III-V) Renesas Yoshihiro Hayashi Samsung Hansu Oh Sony Kaneyoshi Takeshita SRC David Yeh ST Pascal Chevalier(Bipolar) Sony Kaneyoshi Takeshita Teledyne Scientific Miguel Urteaga TI Kamel Benaissa Wibo van Noort Toshiba Tatsuya Ohguro TU Dresden/UCSD Michael Schroter UC Riverside Albert Wang Univ. of Michigan Mina Rais-Zedah (Passives) Univ. of Toronto Sorin Voinigescu UT/Dallas Sam Shichijo 38 Active members 27 N. America, 4 Europe, 7 Asia

4 Work in progress – do not publish System Drivers Circuit-level FOMs related to device technology FOMs -Low-noise amplifier (LNA) -Voltage-controlled oscillator (VCO) -Power amplifier (PA) -Analog-to-digital converter (ADC) -Serializer-Deserializer (SerDes) Example PA, LNA FOM

5 Work in progress – do not publish CMOS Reflect the RF & Analog performance of PIDS technologies f T, f MAX, NF MIN, analog gain, flicker noise, matching Capture parasitic resistances and capacitances using Interconnect & FEP roadmaps. f T increases faster compared to 2009 roadmap No change for : TCAD-based model following PIDS methods Need to account for realistic layout & resulting parasitic impedances

6 Work in progress – do not publish Bipolar 2012 update : Minor changes in the table have occurred 1.High-Speed NPN f T increase delayed by one year and related parameters (W E, BV CEO, BV CBO, J C at peak f T, NF MIN and S Li updated accordingly) f MAX and MAG/MSG values unchanged 2. High-Speed PNP No change in data Coloring updated for f LE (linearity efficiency) 2013 update : Major changes expected for HS NPN 1.High-Speed NPN Move to a simulation-based roadmap using TCAD + Compact modeling Move to performance plateaus (3 to 4 years) linked to driving applications Evaluation of the impact of BEOL parasictics on RF FoM (common to CMOS) 2. High-Speed PNP Move to performance plateaus too FOM & data update 6

7 Work in progress – do not publish III-V technologies Analog, Microwave, mm-wave applications Emphasis on mm-wave Production dates of scaled InP HEMT, InP HBT and GaN HEMT shifted one year (release date driven by pull for technology) Technology roadmaps truncated at expected end of scaling GaAs PHEMT(2015), GaAs Power MHEMT(2019), InP Power HEMT(2023), Low Noise GaAs MHEMT and InP HEMT, InP HBT and GaN HEMT expected to continue scaling For FETs, currently D-mode only, plan to add E-mode device in 2013 revision FOMs depending on technology f T, f MAX, g m, V BD, Power, gain, 10, 24, 60, 94, 140, 220 GHz NF MIN, G 10, 24, 60, 94 GHz LNA NF, G 140, 220 GHz

8 Work in progress – do not publish HVMOS New section in 2011, membership with this expertise doubled this month HVNMOS & HVPMOS devices Power-management & Display-driver applications FOM -Now: BV DSS, R ON x area, Integrated CMOS node Leave roadmap as-is for 2012 Expand application space to higher voltages Add Automotive and Industrial applications Revise roadmap for 2013: devices & FOMs Will impact passive device roadmap

9 Work in progress – do not publish Passive Devices No major revisions since Keep table framework – treating on-chip passives Refresh FOM values vs time 2013 Synchronize with application-based framework of chapter Capture unique requirements of example applications Reflect Silicon, HVMOS & III-V capability

10 Work in progress – do not publish Outlook & future considerations Medical applications Non-MEMs Sensors Imaging Automotive, Industrial & Instrumentation Define primitive functions needed to implement applications in the roadmap Apply also to emerging device technologies


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