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Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Beyond CMOS CTSG IRC Meeting December 15, 2009 DRAFT.

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Presentation on theme: "Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Beyond CMOS CTSG IRC Meeting December 15, 2009 DRAFT."— Presentation transcript:

1 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Beyond CMOS CTSG IRC Meeting December 15, 2009 DRAFT

2 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Objectives Beyond CMOS CTSG IRC FxF Meeting Dec.15, 2009 Follow up discussion of shared treatment of Alternate Channel Materials – Transfer to PIDS Mention new Emerging Research Architectural planning underway for the 2011 ERD Chapter Discuss ERD/ERM Workshops planned for –Memory Technology Assessment –Emerging Research Architectures –Emerging Research Devices – Hi Perf Computing –Emerging Research Devices – More than Moore

3 ITRS 2009 Exec. Summary Propoals Draft – Nov 2009 Work in Progress – Do Not Publish Source: 2009 ITRS – ERD/ERM/PIDS/FEP Proposal for Production Ramp-up Model &Technology Cycle Timing Proposal [Example: III-V MOSFET Channel Replacement Materials] 1K 10K 100K Months -72 1M 10M 100M Alpha Tool Development Production Beta Tool Product Tool Volume (Wafers/Month) K 20K 200K -24 Research -96 Transfer to PIDS/FEP (96-72mo Leadtime) First Tech. Conf. Device Papers Up to ~12yrs Prior to Product III/V Hi- gate Example: 1 st 2Cos. Reach Product First Tech. Conf. Circuits Papers Up to ~ 5yrs Prior to Product Rev 3 Hutchby

4 ITRS 2009 Exec. Summary Propoals Draft – Nov 2009 Work in Progress – Do Not Publish Source: 2009 ITRS – ERD/ERM/PIDS/FEP Proposal for Production Ramp-up Model &Technology Cycle Timing Proposal [Example: III-V MOSFET Channel Replacement Materials] 1K 10K 100K Months -72 1M 10M 100M Alpha Tool DevelopmentProduction Beta Tool Product Tool Volume (Wafers/Month) K 20K 200K -24 Research -96 Transfer to PIDS/FEP (96-72mo Leadtime) First Tech. Conf. Device Papers Up to ~12yrs Prior to Product III/V Hi- gate Example: 1 st 2Cos. Reach Product First Tech. Conf. Circuits Papers Up to ~ 5yrs Prior to Product Rev 4 Hutchby

5 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Major Challenges of III-V MOSFETs High K Gate Dielectric Passivation of High-K / III-V Semiconductor Interface Integration of Ge and III-V Compound Semiconductor on Silicon P-Channel III-V MOSFET or N-Channel Ge MOSFET

6 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Issues Related to III-V MOSFETs Impact of parasitics on I-V Characteristics Effect of source resistance Ballistic model for III-V FETs: role of Density-of-States Ballistic FET I-V characteristics: InGaAs & Si Quasi-Ballistic I-V characteristics: InGaAs & Si Impact of parasitics on switching behavior Estimation of switching behavior Switching behavior of quasi-ballistic FETs: InGaAs & Si Performance projection with scaling Dimensional scaling Supply voltage scaling Drain leakage current

7 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution ERM Challenges Ge & III-V Growth of low defect III-Vs on silicon Co-integration of Ge & III-Vs –Ge dopant activation at higher temperatures –III-V doping of Ge Growth of a high quality high κ dielectric on Ge & III-Vs –Passivation of the interface

8 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution ERD & ERM Alternate Channel Assessments Ge p-FET III-V n-FET Ge p-FET & III-V n-FETs (Separate Assessment?) Nanowire FETs Graphene FETs Carbon Nanotube FETs

9 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution III-V Ge Alternate Channel Partition Proposal ERM Materials, Interfaces & Process Issues & Challenges Critical Assessment of Materials & Integration Capabilities ERD Integrated Device Performance Assessment & Challenges (For different structures surface, buried channel, etc.) Critical Assessment of Device Performance PIDS III-V & Ge Potential Solution SiGe P-FET with Si N-FET Collaborate with ERD on device Readiness FEP Potential Solution: SiGe P-FET with Si N-FET III-V & Ge Potential Solution Track III-V & Ge Issues

10 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution ERD Recommendation ERD recommends to PIDS and FEP that we transfer the III-V and Ge Alternate Channel Materials Technology Element to PIDS and FEP in 2011

11 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution 2009 Emerging Architectures Benchmarking Memory Morphic Thermodynamic

12 Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Proposed ERD/ERM Workshops Workshop TopicLocationDate Memory AssessmentLake Marjorie, ItalyApril 6-7, 2010 Emerging ArchitecturesSan Francisco, CAITRS Dates in July, 2010 Emerging Devices for Hi Performance Computing Seville, SpainSept. 17, 2010 Emerging Devices for More than Moore Tokyo, JapanWinter ITRS – Dec. 2010


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