1. A clean single crystal silicon (Si) wafer which is doped n-type (ColumnV elements of the periodic table). MOS devices are typically fabricated on a,

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Presentation transcript:

1. A clean single crystal silicon (Si) wafer which is doped n-type (ColumnV elements of the periodic table). MOS devices are typically fabricated on a, in the X-cut direction to minimize surface state charges.

2. A 2” diameter clean single crystal silicon (Si) wafer which represents a single molecule having a diamond lattice structure. The wafer-flat is used for alignment.

3. A silicon-dioxide (SiO 2 ) layer thermally grown in a furnace at 1000 o C in a dry oxygen atmosphere. Throughout the process, SiO 2 is used as a mask, as a dielectric, and for passivation of the wafers surface. The ability to grow this dense, homogeneous, native-grown oxide is critical to IC fabrication technology.

4. A thermally grown SiO 2 layer on a Si wafer. The SiO 2 is transparent; the color comes from light-interference from reflection at the Si-SiO 2 interface and the SiO 2 -air interface.

5. Photoresist is spun onto the wafer at 3500 rpm for 30 seconds. The wafer is soft-baked at 90 o C for 30 minutes; leaving a thin, photo-sensitive film. The film is sensitive to ultraviolet (UV) light; this is why fabrication laboratories are often lit by UV-absent, yellow light.

6. A mask is used to protect areas and the photoresist is exposed to an ultraviolet lamp which exposes the photoresist for the required pattern.

7. After exposure, the photoresist is developed and then hard baked at 110 o C for 30 minutes; leaving the desired image in the film which is used as a mask for etching of the silicon dioxide layer.

8. The wafer is placed in a buffered hydrofluoric (HF) etch solution and the silicon dioxide is selectively etched; leaving the desired pattern in the silicon dioxide. This basic photolithographic process is repeatedly used to open windows for selective processing at the silicon surface. Photoresist layer SiO 2 layer Wafer

9. Photoresist is removed leaving a window to the silicon surface for introduction of controlled dopants, or for metal contact. The depression obtained in the SiO 2 layer is also used for alignment from level-to-level in the process. SiO 2 layer Wafer

10. Dopant impurities are introduced by accelerating ions of the desired atoms, such as boron, into the silicon surface. The SiO 2 acts as a mask to protect some silicon areas from the ion implantation.

11. The boron “dopants” are diffused in a high temperature furnace and a silicon oxide layer is re-grown for subsequent processing and passivation. The boron changes the layer from n-type to p-type material.

12. A full patterned 2” wafer after etching a SiO 2 layer, introducing p-type dopants (Column IV elements) in the etched windows, and re-growing a second SiO 2 layer.

13. The oxide is removed or “stripped leaving the diffused layer and a sub-micron depression which can be seen under a microscope for alignment of subsequent masks. p-well n-type Si wafer

14. A SiO 2 layer is grown, then a silicon nitride (SiN) layer is deposited, and finally a SiO 2 layer is grown. The oxide-nitride “sandwich” level is used for masking to define a channel region which is used to isolate transistors from each other.

15. A buffered HF etch removes the exposed SiO 2. The SiN masks and protects the underlying SiO 2 and Si surface. The wafer is then ion implanted with boron atoms to define the channel stop areas.

16. The boron “dopants” are diffused in a high temperature furnace and a silicon oxide layer is re-grown on the Si for subsequent processing and passivation. The SiN area does not easily grow an SiO 2 layer; this provides a selective oxidation process.

17. A SiO 2 layer is re-grown, then a poly crystalline silicon (poly-Si) layer is deposited, and finally a SiO 2 layer is grown. The oxide poly-Si “sandwich” level is used for masking to define the MOS source, drain and gate regions. The thin, lower-level oxide will be used for the gate dielectric.

18. The SiO 2 is etched leaving the poly-Si gate and open windows for the source and drain. The poly-Si gate, source and drain are all highly doped (n + -type) at the same time; creating a self-aligned MOS process.

19. A SiO 2 layer is re-grown over the entire wafer and the MOS transistor. At this point the NMOS transistor is defined and only the via-holes and final metal interconnections are required. Note the SiO 2 layers are used for masking, for the gate dielectric and for passivation of the surface.

20. A finished 2” wafer containing NMOS transistors, diodes, and resistors. These IC building blocks were fabricated by students at UCF’s microelectronic facility.

21. Final Complimentary Metal Oxide Semiconductor (CMOS) Transistor. Device consists of a NMOS and a PMOS transistor forming a simple inverter circuit.

22. NMOS drain-source I DS -V DS curves with varying applied gate voltage. Threshold voltage is approximately –0.3 volts.