NanoFab Simulator Update

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Presentation transcript:

NanoFab Simulator Update Nick Reeder, May 4, 2012

Updates to Thermal Oxidize Code Oxidizes existing material instead of depositing a new layer on top. Assumptions: Si becomes SiO2. All metals are oxidized, and subsequently can’t be etched. Other materials (Ge and all dielectrics) are unaffected by oxidation. Question: When we oxidze doped Si, is the SiO2 still doped, and should we keep track of doping?

Updates to Expose Code Photoresist on sidewalls is UV-exposed, as well as resist on top surfaces. No UV-exposure takes place beneath regions of any non-photoresist material. Problems: Doesn’t correctly handle resist lying directly under other material and within the diffraction cone of a mask. Profile of exposed region within resist is not correct. (Not modeling absorption.)

New Code: Implant Lets user dope silicon or germanium as n, n+, p, or p+. Can later re-dope to a different depth or doping level. Assumption: No doping takes place beneath regions of any material other than Si or Ge. Question: Does doping diffuse horizontally within the Si, or is horizontal extent the same as window’s?

Other Known Problems Spin coat: Resist adheres to underside of horizontal surfaces. Sputter: Doesn’t model sputtering angle, and regions shaded by other structures are sputtered, but shouldn’t be.

Activity Not started Partial Complete Simulation coding Clean X Spin coat Bake Mask/Expose/Develop Evaporate Thermal oxidation CVD Sputter Wet etch Plasma etch Lift off Polish Implant Track time, cost, quality of each process User -interface coding History with option to revert Save/open history files Edit colors User-defined materials Profilometer Producing embedded media (videos, photos, etc.) Testing Documentation