1. NanoFab Trainer Update Nick Reeder, March 14, 2014

2. Change to Materials Database Added Cl 2 +BCl 3 +CHCl 3 +N 2 plasma as an etchant. Retained the Cl 2 +He plasma, which I had added previously. Williams’ 1996 paper has little data for Cl 2 +BCl 3 +CHCl 3 +N 2 plasma, and 2003 paper has none. See next slide for etch rates.

3. Cl2+BCl3+CHCl3+N2 Al + 2% Si Sputtered600 Ti Sputtered- W SputteredW Si Single crystalW Poly n+450 Poly undopedW SiO2 Wet oxide68 Dry oxide67 LTO undoped anneald 75 Unan. PSG LPCVD 2W Ann. PSG LPCVD 174 Si3N4 Stoich LPCVD93 Low-stress LPCVD 86 OCG820 positive resist630 Olin Hunt 6512 positive resist 630 Etch Rates (nm/min) per Williams 1996 Cl2+BCl3+CHCl3 +N2 Ag, Evap or Sputtered0 + warn Al, Evap or Sputtered 600 Au, Evap or Sputtered0 + warn Cr, Evap or Sputtered 0 + warn Cu, Evap or Sputtered0 + warn Ni, Evap or Sputtered0 + warn Pt, Evap or Sputtered0 + warn Ti, Evap, CVD, or Sputtered0 + warn W, CVD or Sputtered10 Ge, Evap or Sputtered0 + warn Si, Wafer or Evap or Sputtered450 Al2O3, Evap or Sputtered 0 + warn SiO2, Thermal Evap or CVD or Sputtered 71 Si3N4, Evap or CVD or Sputtered 90 Ta2O5 0 + warn TiO2 0 + warn SPR 955 630 SU8 2015630 Proposed Simulated Etch Rates (nm/min)

4. Testing Dill Expose Code with Multiple Layers Next three slides compare 1-second exposure with layers of: – Photoresist alone – Photoresist above SiO2 – Photoresist above Al

5. One-second exposure, 1.5 µm photoresist layer above Si substrate.

6. One-second exposure, 1.5 µm photoresist layer above 0.5 µm SiO2 layer above Si substrate.

7. One-second exposure, 1.5 µm photoresist layer above 0.5 µm Al layer above Si substrate.

8. Testing Dill Expose Code with Multiple Layers Next three slides compare 5-second exposure with layers of: – Photoresist alone – Photoresist above SiO2 – Photoresist above Al

9. Five-second exposure, 1.5 µm photoresist layer above Si substrate.

10. Five-second exposure, 1.5 µm photoresist layer above 0.5 µm SiO2 layer above Si substrate.

11. Five-second exposure, 1.5 µm photoresist layer above 0.5 µm Al layer above Si substrate.

12. Question From Our Last Meeting How to generate the incident beam profile at resist surface (as in the figure at right from p. 5 of Andrew’s photoresist chapter), given intensity, width of mask opening, distance of mask from surface, and thickness of resist layer?chapter

13. Date Added To-Do Item Who’s Responsible Date Finished 3/16/12Write code to provide top-down view of mask.NR 3/30/12Add Cl 2 as an etchant.NR 2/11/14 3/30/12 Write code to implement polish, given user parameters of grit size & time. NR 3/30/12 Provide algorithm to determine polish rate given material and grit size. JM 4/20/12Incorporate Andrew’s code for photoresist exposure.NR 4/20/12Fix photoresist underhang problem in spin-coat code.NR 5/4/12 Write code to implement stopping powers of layers to determine whether underlying Si is doped during implantation. NR 5/27/12Write code to implement lift-off.NR1/29/14 5/29/12Write code to implement bake of photoresist.NR 5/31/12 Provide realistic limits on the following user-provided parameters: pressure and temperature when performing CVD; dose and ion energy when performing implantation. AS 6/28/12Niu suggests iterating etch code in seconds instead of minutes.NR2/9/14 1/18/13 Provide look-up table data for 1.) CVD deposition rates based on user- supplied pressure & temperature; 2.) evaporation deposition rates based on user-supplied current & voltage; 3.) sputter deposition rates of Au, Ni, Pt, W, Si 3 N 4, Ta 2 O 5, TiO 2, and Si based on user-supplied pressure & power. AS 1/18/13Write code to implement annealing after implantation.NR 1/18/13Write code to implement doping by diffusion.NR

14. Date Added To-Do ItemWho’s Responsible Date Finished 3/1/13 Write code to implement projection lithography as well as contact lithography. NR 4/14/13 Decide whether to accept Nick’s suggested edits (sent on 4/14/13 and 5/8/13) to Andrew’s seventeen tutorial chapters. AS 6/19/13 Surinder suggests automatically filling in dialog-box parameters if user clicks a point in a “View Rate” graph. NR 10/23/13 Jamshid suggests providing link in dialog boxes to display the relevant “View Rate” graph. NR1/21/14 10/30/13 Jamshid’s student Rajput suggests making it easier for user to know which solvents etch which materials. NR1/21/14 11/3/13Fix bug causing photoresist spikes per Jamshid’s student Chico.NR1/6/14 11/3/13Address performance issue per Jamshid’s student Jarrod.NR2/2/14 Write code to track and plot time, cost, quality of user operations.NR Provide algorithm for tracking time, cost, quality of user operations.AS Write code to implement cleaning.NR Write code to implement profilometer.NR Record video clips (in.flv format) of lab operations.AS & JM Write online help text.NR Test the trainer and report problems to Nick.ALL 1/17/14Revise CVD code to distinguish LPCVD and PECVD.NR 1/28/14 Provide empirical algorithm for finding intensity profile at resist surface given intensity, opening width, airgap, resist thickness. AS