1. DIGITAL INTEGRATED CIRCUITS FOR COMMUNICATION احسان احمد عرساڻِي Every Wednesday: 15:00 hrs to 18:00 hrs هر اربع: شام 3 وڳي کان 6 وڳي تائين

2. My Introduction منهنجو تعارف  Ahsan Ahmad Ursani  Associate Professor  Dept. of Telecommunication Engineering  Office No: TL-117  Institute of Communication Technologies  Email:  Web page:  احسان احمد عرساڻي  ايسوسيئيٽ پروفيسر  شعبو ڏور ربطيات  دفتر نمبر: TL-117  انسٽيٽيوٽ آف ڪميونيڪيشن ٽيڪنالاجيز  برق ٽپال:  ويب صفحو: ahsan.ursani@faculty.muet. edu.pk https://sites.google.com/a/fac ulty.muet.edu.pk/aau/home

3. The Teaching Plan تدريسي رٿا S. No.ChapterHours 1Dynamc Combinational CMOS Logic10 2Designing Sequential Logic17 3Designing Memory and Array Structures21 Total48 Pre-Requisite:IC Design

4. The Textbook نصابي ڪتاب Digital Integrated Circuits A Design Perspective Jan M. Rabaey Chapter 6, 7, & 12

5. Chapter 2 باب پهريون S. No.TopicHours 1Introduction1 2Static Latches and Registers1 3Dynamic Latches and Registers1 4Alternative Register Styles1 5Pipelining: An approach to optimize sequential1 6Speed and Power Dissipation1 7Non-Bistable Sequential Circuits1 8Perspective: Choosing a Clocking Strategy1 91 101 Total10

6. Introduction

7. Timing Metrics for Sequential Circuits  Set-Up time t su  Time before clock transition  Hold time t hold  Time After clock transition  worst-case propagation delay tc-q  minimum delay (contamination delay) t cd  Propagation Delay of combinational logic t plogic  Time period of the Clock signal T

8. Timing Metrics for Sequential Circuits

10. Classification of Memory Elements  Foreground Memory  embedded into logic  organized as individual registers of register banks  Background Memory  Large amounts of centralized memory core  Not the subject of this chapter

11. Two types of memory  Not refreshed frequently  Circuits with Positive feedback  Multivibrators  Refreshed frequently  In order of miliseconds  Store state of parasitic capacitances of MOS  Higher performance  Lower Power Dissipation StaticDynamic

12. Latch  Level-sensitive circuit  Passes input D to the Output Q  Output does not change in the HOLD MODE  Input just before the going into HOLD phase is held stable during the following HOLD phase  An essential component of Edge-triggered Register

13. The +ve and the –ve Latches

14. A Bistable Circuit  Basic Part of a memory  Having two stable states  Use +ve feedback

15. The Bistability Principle

16. Metastability loop gain is greater than unity loop gain is much smaller than unity

17. Transition from one state to the other  This is generally done by applying a trigger pulse at Vi1 or Vi2  The width of the trigger pulse need be only a little larger than the total propagation delay around the circuit loop, which is twice the average propagation delay of the inverters

18. SR Flip Flop

19. SR Flip-Flop Using NAND Gates Using NOR Gates

20. CMOS clocked SR flip-flop  Fully fully-complimentary CMOS implementation of SR flip Flop requires 8 transistors  Clocked operation will require extra transistors  Two Crossed Coupled Inverters  4 extra transistors for R, S, and CLK inputs

21. CMOS clocked SR flip-flop  M4, M7, and M8 forms a ratioed Inverter  Q is high and R is applied  we must succeed in bringing Q below the switching threshold of the inverter M1-M2  Must increase the size of M5, M6, M7, and M8

22. Example 7.1: Transistor Sizing of Clocked SR Latch  (W/L) M1 = (W/L) M3 = 0.5mm/0.25mm  (W/L) M2 =(W/L) M4 =1.5mm/0.25mm  V M = V DD /2  Q = 0  V OL (Q=0) < V M  (W/L) M5-6 ≥ 2.26  (W/L) M5 = (W/L) M6 ≥ 4.5

23. DC output voltage vs. individual pulldown device Transient Response

24. Example 7.2: Propagation Delay of Static SR Flip-Flop

25. Problem 7.2 Complimentary CMOS SR FF  Instead of using the modified SR FF of Figure 7.8, it is also possible to use complementary logic to implement the clocked SR FF. Derive the transistor schematic (which consists of 12 transistors). This circuit is more complex, but switches faster and consumes less switching power. Explain why.

26. Multiplexer-Based Latches

27.  The feedback loop is off while output is changing  Feedback is not to be overridden to change the output  Transistor sizing is not critical to fuctionality  Clock load is 4 AdvantagesDisadvantages

28. NMOS latch using Pass Transistors  Clock load = 2  Degraded logic 1 passed to the first inverter (V DD -V TN )  For smaller values of V DD Less noise margin Less switching performance Static Power Dissipation

29. Master Slave Edge-triggered Register: Positive edge-triggered

30. Problem 7.3: Optimization of the Master Slave Register  I 1 and I 2 can be removed  Functionality affected ?

31. Timing properties of Multiplexer-based Master-Slave Register  Set-up time  Hold time  Propagation Delay  Propagation Delay of Inverter (t pd_inv )  Propagation Delay of Transmision Gate (t pd_tx )  t su = 3 t pd_inv + t pd_tx  t c-q = t pd_tx (T 3 ) + t pd_inv (I 6 )  t hold = 0

32. Master Slave Edge-triggered Register: Negative Edge-trggerred  Draw a circuit based on transmission gate multiplexers

33. Set-up time simulation in SPICE  Progressively skew the input with respect to the clock edge until the circuit fails

34. Set-up time simulation Tsetup = 0.21 nsecTsetup = 0.20 nsec

35. Simulation of propagation delay  Tc-q = t pd_tx (T 3 ) + t pd_inv (I 6 )   T c-q(LH) = 160 ps  T c-q(HL) = 180 ps

36. Reduced Clock Load  Feedback transmission gates removed  Clock load = 4  Ratioed Logic  T 1 should be properly sized so as to be able to change the I 1 I 2 state

37. Reverse Conduction  T 2 can also drive T 1  I 4 must be a weak device to prevent it from driving T 2

38. Non Ideal Clock Signals  Assumption that clock inversion takes ZERO time  Effects of Capacitive loads dissimilar capacitive loads due to different data stored in the connecting latches  Different routing conditions of the two signals  Clock Skew

39. Problems due to Clock Skew  Direct Path B/W D and Q  Race Condition  Can conduct on +ve edge of clock

40. Solution to Clock Skew: Pseudostatic 2-phase D register  Two phase Clock signal  2 non-overlaping phases

41. Dynamic Transmission Gate Edge triggered Register  t su = t pinv  t cq = 2t pinv + t ptgate  Needs Refereshing  Clock Overlap can cause the problem called Race  1-1 Overlap  Increasing hold time  0-0 Overlap  T overlap0-0 < t T1 + t I1 + t T2  Input Signal D must not be able to propagate through T 2 During 0-0 o overlap

43. C 2 MOS – Clocked CMOS A Clock Skew Insensitive Approach  Positive Edge Triggered Master –Slave Register  Clocked CMOS  CLK=0; Master samples the inverted version of D on X  CLK=1; Master is in the HOLD mode and Slave passes the value on X to Q

44. 0 – 0 Overlap

45. 1 – 1 Overlap

46. C 2 MOS – Clock Overlap  0 – 0 overlap does not create any problem  1 – 1 overlap puts a HOLD constraint

47. Dual Edge Registers  It consists of two parallel masterslave based edge-triggered registers, whose outputs are multiplexed using the tri-state drivers  The advantage of this scheme is that a lower frequency clock (half of the original rate) is distributed for the same functional throughput, resulting in power savings in the clock distribution network

48. True Single-Phase Clocked Register (TSPCR) Positive LatchNegative Latch

49. Embedded logic

50. Example 7.4 Impact of embedding logic into latches on performance  Consider embedding an AND gate into the TSPC latch, as shown in Figure 7.31b. In a 0.25  mm, the set-up time of such a circuit using minimum- size devices is 140 psec. A conventional  approach, composed of an AND gate followed by a positive latch has an effective set-up time  of 600 psec (we treat the AND plus latch as a black box that performs both functions). The  embedded logic approach hence results in significant performance improvements.

51. Simplified TSPC latch / Split Output

52. Simplified TSPC Register  Reduced Implementaiton Area  Less Power Consumption  Reduced Clock Load  All nodes do not experience full logic swing  Reduced Performance  This also limits the amount of VDD scaling possible on the latch ADVANTAGESDISADVANTAGES

53. Single-phase edge-triggered register  CLK = 0  Sampling inverted D on node X.  The second inverter is in the precharge mode  M6 charging up node Y to VDD.  3 rd inverter is in HOLD, M8 and M9 are off.

54. Positive Edge Triggered Single-phase edge-triggered register  On the rising edge of the clock, the dynamic inverter M4-M6 evaluates. If X is high on the rising edge, node Y discharges.  The third inverter M7- M8 is ON during the high phase, and the node value on Y is passed to the output Q.

55. Positive Edge Triggered Single-phase edge-triggered register  On the +ve phase of the clock, X transitions to a low if D transitions to a high level.  Input must be kept stable till the value on node X before the rising edge of the clock propagates to Y. This represents the hold time of the register  hold time less than 1 inverter delay since it takes 1 delay for the input to affect X.  The propagation delay of the register is 3 inverters since the value on node X must propagate to the output Q.  Finally, the set-up time is the time for node X to be valid, which is 1 inverter delay.

56. TSPC Edge-Triggered Register Transistor Sizing  D is low & X=Q~=1; Q=0.  CLK is low, Y is precharged high turning on M7.  CLK transitions from low to high, Y and Q~ start dis- charging simultaneously (through M4-M5 & M7-M8, respectively).  Once Y is sufficiently low, the trend on Q~ is reversed and the node is pulled high anew through M9.

57. Effects of Glitch and Solution  fatal errors, as it may create unwanted events  when the output of the latch is used as a clock signal input to another register). It  reduces the contamination delay of the register.  The problem can be corrected by resizing the relative strengths of the pull-down paths through M4-M5 and M7-M8, so that Y discharges much faster than Q.  This is accomplished by reducing the strength of the M7-M8 pulldown path, and by speeding up the M4 - M5 pulldown path.

58. TSPC Edge-Triggered Register Transistor Sizing