1. NA Silicon Wafer Committee Liaison Report
Updated May 16, 2013

2. Meeting Information Last meeting Next meeting
Tuesday, April 2, 2013, NA Spring Standards Meeting
Intel, Santa Clara, CA
Next meeting
Tuesday, July 9, 2013, SEMICON West
Francisco Marriott Marquis, CA
for the latest update

3. NA Silicon Wafer Committee
Committee Chairmen
Noel Poduje /SMS
Dinesh Gupta /STA

4. Silicon Wafer Committee C: Dinesh Gupta - STA C: Noel Poduje – SMS
VC: Mike Goldstein – Intel
TE: Murray Bullis – Materials & Metrology
Specifications
Int’l Annealed Wafers TF
Dinesh Gupta -STA
Int’l 450 mm Wafers TF
Mike Goldstein - Intel
Int’l Epitaxial Wafers TF
Dinesh Gupta - STA
Int’l Polished Wafers TF
Murray Bullis -
Materials & Metrology
Int’l SOI Wafers TF
Mariam Sadaka- SOITEC
Metrology
Int’l Advanced Wafer
Geometry TF
Noel Poduje – SMS
Jaydeep Sinha – KLA-Tencor
John Valley - MEMC
Int’l Advanced Surface
Inspection TF
George Kren - KLA-Tencor
Committee
Int’l Test Methods TF
Int’l Terminology TF

5. Ballot results
Doc. 5450A, Revision to SEMI M , with Title Change to: Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations
Approved pending ISC A&R Review
Doc. 5559, New Auxiliary Information: Interlaboratory Evaluation Of Nondestructive Method For Measuring The Edge Contour Of Silicon Wafers

6. New SNARFs Int’l Polished Wafer TF Int’l Annealed Wafer TF
11/8/2018
New SNARFs
Int’l Polished Wafer TF
Doc. 5543, Line Items Revision to SEMI M1-0413, Specifications for Polished Single Crystal Silicon Wafers
SNARF was revised to allow additional line item changes
Int’l Annealed Wafer TF
Doc. 5583, Revision of SEMI M , Specifications for Silicon Annealed Wafers

7. Workshop at SEMICON West [1]
Silicon Wafers – Future Standardization to Enable the Transition
Since 2008, SEMI has published fifteen 450 mm wafer standards, guided by customer requirements and supplier feedback. These specifications, covering wafers, carriers, and loadports, have enabled the industry to continue the development of equipment, materials, interfaces, and processes, but further standardization will be necessary for a successful transition to manufacturing on 450mm wafers. Speakers from Intel, Samsung, and TSMC and others will introduce some of these new concepts during this seminar.
Proposals discussed during this workshop will be considered for standization by the SEMI Standards Advanced Wafer Geometry Task Force under the Silicon Wafer Committee.
Wednesday, July 10, 2013 (2:30-5:30 PM)
San Francisco Marriott Marquis

8. Workshop at SEMICON West [2]
Proposed Agenda
14:30 – 14:50: Mike Goldstein (Intel): Towards 450 mm Silicon Wafers
14:50 – 15:20: Kwangkook Lee (Samsung/G450C): New Edge Exclusion Proposal
15:20 – 15:50: Pinyen Lin (TSMC/G450C): Notchless Wafer
15:50 – 16:20: Gerd Pfeiffer (IBM): Wafer Geometry for Advanced Nodes
16:20 – 16:50: Hisashi Furuya (SUMCO): Challenges during 450 mm Silicon Processing
16:50 – 17:20: Allen Ware (F450C): 450 mm Facilities Planning
17:20 – 17:30: Q&A
Registration at:
SEMICONWEST.ORG or direct link at

9. 11/8/2018
Ballots for Cycle
Doc. 5543, Line Items Revision to SEMI M1-0413, Specifications for Polished Single Crystal Silicon Wafers
Doc. 5541, Revision to SEMI M Specification of Silicon-on-insulator (SOI) For Power Device/ICs

10. Metrology Group
Int’l Advanced Wafer Geometry TF/Noel Poduje (SMS) & Jaydeep Sinha (KLA-Tencor) [1]
Activities are well coordinated internationally
EU - Doc. 5430A: Revision to M73, Test Methods for Extracting Relevant Characteristics from Measured Wafer Edge Profiles
Ballot issued in cycle for review at West
Drafting doc Rev. to M , Guide For Specifying Geometry Measurement Systems For Silicon: NT and ZDD scaling from reference wafer

11. Metrology Group
Int’l Advanced Wafer Geometry TF/Noel Poduje (SMS) & Jaydeep Sinha (KLA-Tencor) [2]
Drafting doc. 5540, New Auxiliary Information, Illustration of Flatness and Shape Metrics for Silicon Wafers
Drafting doc. 5539, Revision of SEMI MF (Reapproved 0512) ,Test Method for Measuring Warp on Silicon Wafers by Automated Non-Contact Scanning

12. Metrology Group
Int’l Advanced Surface Inspection TF/George Kren (KLA-Tencor), John Valley (MEMC)
Drafting doc. 5503, Line Item Revision to M Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology Generations (add M80 in reference)
To address Shimizu-san’s negative
Discussed SEMI M53 Model Based Calibration (MBC) - Proof of Concept

13. Specifications Group TF will continue to support the 450 mm program.
11/8/2018
Specifications Group
Int’l 450 mm Wafer TF/Mike Goldstein (Intel)
TF will continue to support the 450 mm program.
Doc. 5442, Reapproval of SEMI M , Specification for 450 mm Diameter Mechanical Handling Polished Wafers
Ballot passed at SEMICON Japan and published
An Interest on 450 mm Notchless Wafer Standard was discussed by G450C
See attached for presentations

14. Specifications Group
Int’l Polished Wafer TF/Murray Bullis (Materials & Metrology)
Doc. 5543, Line Items Revision of SEMI M1-0413, Specifications for Polished Single Crystal Silicon Wafers
Ballot is issued for cycle for review at SEMICON West

15. Specifications Group Int’l SOI Wafer TF/Mariam Sadaka (SOITEC)
Doc. 5541, Revision of SEMI M Specification of Silicon-on-Insulator (SOI) for Power Device/Ics
Ballot was issued for cycle for review at SEMICON West

16. Specifications Group Int’l Epitaxial Wafer TF/Dinesh Gupta (STA)
Drafting doc. 5542, Line Item Revision to SEMI M , Specifications for Silicon Epitaxial Wafers
Line items include:
1. Make Revision of Tables R2-7 & R2-8 - Change ¶3-2.7 Nanotopography value and related Footnote #9.
2. Add diameter information to Item Table R2-7, R2-8
3. Add Some editorial changes

17. Specifications Group Int’l Annealed Wafer TF/Dinesh Gupta (STA)
Drafting doc. 5583, Revision of SEMI M , Guide for Specifying Silicon Annealed Wafers
Revision includes:
Delete footnote 4 reference to 200mm diameter for 32nm and 2nm technology nodes
Make the corrections to footnotes

18. Committee TF
Int’l Terminology TF/Murray Bullis (Materials & Metrology)
Revision SEMI M , Terminology for Silicon Technology
No revision at the present time
Future terms include:
polysilicon,
wafer packaging,
microscopy and optics terms

19. Committee TF
Int’l Test Methods TF/Dinesh Gupta (STA)
Doc. 5313B Line Items Revision of SEMI MF , Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
Consensus is lacking. Revisions are ongoing.
The discussion will be discussed at SEMICON

20. Contact
For more information, please contact Kevin Nguyen at