1. NA Silicon Wafer Committee Liaison Report
Updated November 19, 2010

2. Meeting Information Last meeting Next meeting
Tuesday, November 09, 2010, NA Fall Standards Meeting
Intel in Santa Clara, CA
Next meeting
Tuesday, March 29, 2011, NA Spring Standards Meeting
Location – to be determined
Cymer in San Diego or SEMI HQ in San Jose.
for the latest update

3. NA Spring draft schedule
Monday, March 28
08:00-09:00 Int'l 450 mm Wafer (TF)
09:00-10:00 Int'l Epi Wafer (TF)
10:00-11:00 Int'l Advanced Surface Inspection (TF)
11:00-12:00 Int'l Test Methods (TF)
13:00-17:00 Int'l Advanced Wafer Geometry (TF)
Tuesday, March 29
08:00-09:00 Int'l Polished Wafer (TF)
09:00-12:00 Silicon Wafer (C)

4. NA Silicon Wafer Committee
Committee Chairmen
Dinesh Gupta /STA
Noel Poduje /SMS

6. Ballots passed review at Fall Meeting [1]
Document 4927, Line Items Revision of SEMI M Specifications for Polished Single Crystal Silicon Wafers
• Line Item 1 - Change ¶ 2.1 as follows
• Line Item 2 - Add the following after EM-3504 in ¶ 3.3 JEITA Standards and modify parts of table 1
• Line Item 3 - Removing T1 and T2
Document, 4928, Line Items Revision of SEMI M Terminology for Silicon Technology
• Line Item 1 - Change the definition of ingot in SEMI M as follows
• Line Item 2 - Add the following definition to §5 of SEMI M59 (in proper alphabetical order)
Document, 5036, Withdrawal of SEMI M Guide for Specifying SIMOX Wafers
Document, 5037, Reapproval of SEMI M Guide For Measurement Of Interstitial Oxygen In Silicon

7. Ballots passed review at Fall Meeting [2]
Document, 5038, Reapproval of SEMI MF Test Method For Determining The Orientation Of A Semiconductive Single Crystal
Document, 5039, Reapproval of SEMI MF Test Method For Edge Contour Of Circular Semiconductor Wafers And Rigid Disk Substrates
Document, 5040, Reapproval of SEMI MF Test Method For Dimensional Notches
Document, 5041, Reapproval of SEMI MF Test Method For Oxygen Precipitation Characteristics Of Silicon Wafers By Measurement Of Interstitial Oxygen Reduction
Document, 5042, Reapproval of SEMI MF Test Method For Determination Of Radial Interstitial Oxygen Variation In Silicon Wafers

8. Ballots approved for cycle 1-2011 [1]
Doc. 5043, Revision of MF Test Method for Measuring the Reflective Total Integrated Scatter
Doc. 5081, Reapproval of SEMI MF Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
Doc. 5082, Reapproval of SEMI MF Test Methods for Resistivity of Semiconductor Materials
Doc , Reapproval of SEMI MF Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
Doc. 5084, Reapproval of SEMI MF Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces

9. Ballots approved for cycle 1-2011 [2]
Doc. 5085, Reapproval of SEMI MF Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
Doc. 5086, Reapproval of SEMI MF Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
Doc. 5087, Reapproval of SEMI MF Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
Doc. 5088, Reapproval of SEMI MF Practice for Preparing Silicon for Spreading Resistance Measurements
Doc. 5089, Reapproval of SEMI MF Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

10. Metrology Group Int’l Advanced Wafer Geometry TF/Noel Poduje (SMS)
Kevin Turner/University of Wisconsin presented “Mechanics Modeling of the Effect of Back Surface Nanotopography in CMP Processes”
Backside nanotopography affect polishing pressure and resulting oxide clearing and nitride thinning
New SNARF (doc. 5091) Revision of SEMI M Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations (Re: ZDD parameter)
A questionaire is being circulated to survey industry’s value on ESFQR and ZDD parameters from 45 nm through 16 nm node

11. Metrology Group Int’l Advanced Surface Inspection TF/John Stover (TSW)
Doc 4766 Revision to M Guide for Specifying SSIS for Si. Wafers for the 130 nm, 90 nm, 65 nm, and 45 nm Technology Generations
Discussed 20 nm Design Rule level for 450 mm
Involvement from wafer manufacturers needed
Doc. 5043, Revision to MF Test Method for Measuring the Reflective Total Integrated Scatter,
The rewrite is necessary because of errors found in the existing document and the need to expand it slightly for use in a PV Task Force
As an exception, GCS is asked for ballot to be reviewed at NA Spring meeting due to its technical flaw that is currently being published

12. Specifications Group Int’l 450 mm Wafer TF/Mike Goldstein (Intel)
New SNARF (doc. 5090) approved for inclusion of 450 mm polished wafer specification in SEMI M1.
Discussed the update of the 450 mm test wafer development status.

13. Specifications Group Int’l SOI Wafer TF/George Celler (SOITEC)
Published SEMI M Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI
New SNARF 5034, Revision of M71
Extension of the SOI film thickness from the current 20 nm minimum to a new minimum of 10 nm or even a lower limit.
Both SEMI M and M were approved for withdrawn. M71 supersede these withdrawn standards

14. Specifications Group Int’l Epitaxial Wafer TF/Dinesh Gupta (STA)
Doc Revision to SEMI M Specifications for Silicon Epitaxial Wafers
Adding 22 nm epi guide
Received one persuasive reject from Tetsuya Nakai-san
Discussed ballot results at NA Fall meeting
TF revised draft and recommended to reballot in cycle 1 for review in San Francisco at SEMICON West 2011

15. Specifications Group
Int’l Polished Wafer TF/Murray Bullis (Materials & Metrology)
Doc Rev. of SEMI M Spec. for Polished Single Crystal Silicon Wafers
To include Bulk Micro Defect (BMD) requirements since BMD test method is completed and published in Japan as JEITA EM 3508
To remove T1 and T2 from SEMI M1 since they were withdrawn by Traceability committee
Ballot was approved

16. Committee TF
Int’l Terminology TF/Murray Bullis (Materials & Metrology)
Revision SEMI M , Terminology for Silicon Technology
Ballot passed regarding the terms ingot and crystal originated pit
Future works include polysilicon, wafer packaging, microscopy and optics terms

17. Committee TF Int’l Test Methods TF/Dinesh Gupta (STA) [1]
All 5 year review ballots were approved
SEMI M , SEMI MF , SEMI MF ,
SEMI MF , SEMI MF , SEMI MF
New 5 year ballot review approved for cycle
Reapproval of SEMI MF Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
Reapproval of SEMI MF Test Methods for Resistivity of Semiconductor Materials
Reapproval of SEMI MF Test Method for Measuring Radial Resistivity Variation on Silicon Wafers

18. Int’l Test Methods TF/Dinesh Gupta (STA) [2]
Reapproval of SEMI MF Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
Reapproval of SEMI MF Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
Reapproval of SEMI MF Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
Reapproval of SEMI MF Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
Reapproval of SEMI MF Practice for Preparing Silicon for Spreading Resistance Measurements
Reapproval of SEMI MF Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

19. Committee’s Decision on Patents [1]
SEMI MF Practice for Evaluation of Granular Polysilicon By Melter-zoner Spectroscopies and
SEMI MF723 - Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon
SEMI MF Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy
US , Analytical Method for Particulate Silicon
Not material because “silicon vessel” as cited in claims is not used in these documents
US , Method for Analyzing Irregular Shaped Chunked Silicon for Contaminants
Not material because “zonable chunks” as cited in claims is not used in these documents
JP , Method for Analyzing Impurity of Polycrystalline Silicon
Pending until English translation is obtained. However, the committee believes that this patent may also not be related as this patent relates to Activation analysis and ICP-MS techniques but these documents do not.

20. Committee’s Decision on Patents [2]
SEMI M Specifications for Polished Single Crystal Silicon Wafers
ESFQR in SEMI M Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD and ESBIR Metrics
ROA in SEMI M Practice for Determining Wafer Near-edge Geometry Using Roll-off Amount, ROA
Committee found ESQR and ROA not material base on their presence in SEMI M1 since the actual practices are not listed in M1.

21. Contact
For more information, please contact Kevin Nguyen at