1 Figure 4.10 (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Modified circuit symbol with an arrowhead on the source terminal to distinguish.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.

Introduction to MOSFETs

Transistors (MOSFETs)

Transistors (MOSFETs)

ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc. Lecture 28 Field-Effect Transistors.

University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

Chapter 6 The Field Effect Transistor

Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 12 Lecture 12: MOS Transistor Models Prof. Niknejad.

10/8/2004EE 42 fall 2004 lecture 171 Lecture #17 MOS transistors MIDTERM coming up a week from Monday (October 18 th ) Next Week: Review, examples, circuits.

(N-Channel Metal Oxide Semiconductor)

The metal-oxide field-effect transistor (MOSFET)

Chapter 5 – Field-Effect Transistors (FETs)

ECD 442 Power Electronics1 Power MOSFETs Two Types –Depletion Type Channel region is already diffused between the Drain and Source Deplete, or “pinch-off”

Fig. 5.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross section. Typically L = 1 to 10 m, W = 2 to 500.

Reading: Finish Chapter 6

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

© Electronics Recall Last Lecture The MOSFET has only one current, I D Operation of MOSFET – NMOS and PMOS – For NMOS, V GS > V TN V DS sat = V GS – V.

MOS Field-Effect Transistors (MOSFETs)

Chapter Five The Field-Effect Transistor. Figure 6—2 A three-terminal nonlinear device that can be controlled by the voltage at the third terminal v.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Metal-Oxide- Semiconductor (MOS) Field-Effect Transistors (MOSFETs)

Metal-Oxide-Semiconductor Field Effect Transistors

Transistors (MOSFETs)

Types of MOSFETs ECE 2204.

Introduction to FET’s Current Controlled vs Voltage Controlled Devices.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 7, slide 1 Introduction to Electronic Circuit Design.

© The McGraw-Hill Companies, Inc McGraw-Hill 1 PRINCIPLES AND APPLICATIONS OF ELECTRICAL ENGINEERING THIRD EDITION G I O R G I O R I Z Z O N I 9.

Metal-Oxide Semiconductor (MOS) Field-Effect Transistors (MOSFETs)

EEE1012 Introduction to Electrical & Electronics Engineering Chapter 7: Field Effect Transistor by Muhazam Mustapha, October 2010.

Course Outline 1. Chapter 1: Signals and Amplifiers

ECE 342 Electronic Circuits 2. MOS Transistors

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Chapter 5: Field Effect Transistor

MOS Field-Effect Transistors (MOSFETs)

1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.

Chapter 11 Field effect Transistors: Operation, Circuit, Models, and Applications Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction.

Chapter 4 Field-Effect Transistors

Field Effect Transistors: Operation, Circuit Models, and Applications AC Power CHAPTER 11.

CP 208 Digital Electronics Class Lecture 7 March 11, 2009.

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

Chapter 2 Field-Effect Transistors(FETs) SJTU Zhou Lingling.

1 Chapter 5. Metal Oxide Silicon Field-Effect Transistors (MOSFETs)

Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent.

Structure and Operation of MOS Transistor

EE210 Digital Electronics Class Lecture 7 May 22, 2008.

MOSFET Structure p-Si n+ L Source Gate Drain Field Oxide Gate Oxide

© 2000 Prentice Hall Inc. Figure 5.1 n-Channel enhancement MOSFET showing channel length L and channel width W.

11. 9/15 2 Figure A 2 M+N -bit memory chip organized as an array of 2 M rows  2 N columns. Memory SRAM organization organized as an array of 2.

Integrated Circuit Devices Professor Ali Javey Summer 2009 MOSFETs Reading: Chapters 17 & 18.

1 Tai-Cheng Lee Spring 2006 MOS Field-Effect Transistors (MOS) Tai-Cheng Lee Electrical Engineering/GIEE, NTU.

Junction Field Effect Transistor

Field Effect Transistors (1) Dr. Wojciech Jadwisienczak EE314.

1 Small Signal Model MOS Field-Effect Transistors (MOSFETs)

Field Effect Transistor (FET)

CP 208 Digital Electronics Class Lecture 6 March 4, 2009.

Transistors (MOSFETs)

The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.

ECE 333 Linear Electronics

ECE 333 Linear Electronics Chapter 7 Transistor Amplifiers How a MOSFET or BJT can be used to make an amplifier  linear amplification  model the linear.

SJTU Zhou Lingling1 Chapter 2 Field-Effect Transistors (FETs)

1 MOS Field-Effect Transistors (MOSFETs). Copyright  2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Figure.

Content Physical operation and current-voltage characteristics DC analysis Biasing in MOS amplifier circuit and basic configuration.

Field Effect Transistors

MOS Field-Effect Transistors (MOSFETs)

ترانزیستور MOSFET دکتر سعید شیری فصل چهارم از:

Transistors (MOSFETs)

Presentation transcript:

1 Figure 4.10 (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Modified circuit symbol with an arrowhead on the source terminal to distinguish it from the drain and to indicate device polarity (i.e., n channel). (c) Simplified circuit symbol to be used when the source is connected to the body or when the effect of the body on device operation is unimportant.

2 Figure 4.11 (a) An n-channel enhancement-type MOSFET with v GS and v DS applied and with the normal directions of current flow indicated. (b) The i D – v DS characteristics for a device with k’ n (W/L) = 1.0 mA/V 2.

3 Figure 4.12 The i D – v GS characteristic for an enhancement-type NMOS transistor in saturation (V t = 1 V, k’ n W/L = 1.0 mA/V 2 ).

4 Figure 4.13 Large-signal equivalent-circuit model of an n-channel MOSFET operating in the saturation region.

5 Figure 4.14 The relative levels of the terminal voltages of the enhancement NMOS transistor for operation in the triode region and in the saturation region.

6 Figure 4.15 Increasing v DS beyond v DSsat causes the channel pinch-off point to move slightly away from the drain, thus reducing the effective channel length (by D L).

7 Figure 4.16 Effect of v DS on i D in the saturation region. The MOSFET parameter V A depends on the process technology and, for a given process, is proportional to the channel length L.

8 Figure 4.17 Large-signal equivalent circuit model of the n-channel MOSFET in saturation, incorporating the output resistance r o. The output resistance models the linear dependence of i D on v DS and is given by Eq. (4.22).

9 Figure 4.18 (a) Circuit symbol for the p-channel enhancement-type MOSFET. (b) Modified symbol with an arrowhead on the source lead. (c) Simplified circuit symbol for the case where the source is connected to the body. (d) The MOSFET with voltages applied and the directions of current flow indicated. Note that v GS and v DS are negative and i D flows out of the drain terminal.

10 Figure 4.19 The relative levels of the terminal voltages of the enhancement-type PMOS transistor for operation in the triode region and in the saturation region.