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University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

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Presentation on theme: "University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling."— Presentation transcript:

1 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling

2 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 2 MOS Device Structure

3 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 3 NMOS and PMOS with Well

4 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 4 MOS Symbols

5 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 5 MOS Channel Formation

6 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 6 I/V Characteristics

7 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 7 I/V Characteristics

8 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 8 I/V Characteristics (cont.)

9 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 9 I/V Characteristics (cont.)

10 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 10 Operation in Triode Region

11 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 11 Operation in Active (Saturation) Region

12 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 12 Active Region (cont.) Active Region

13 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 13 Transconductance, g m

14 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 14 Triode and Active Region Transition Active

15 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 15 Threshold Voltage and Body Effect

16 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 16 Threshold Voltage and Body Effect (cont.) No Body Effect With Body Effect

17 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 17 Channel Length Modulation L L’

18 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 18 Channel Length Modulation (cont.)

19 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 19 Subthreshold Conduction

20 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 20 MOS Layout

21 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 21 Device Capacitances

22 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 22 Layout for Low Capacitance

23 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 23 G-S and G-D Capacitance

24 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 24 MOS Small Signal Models

25 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 25 Bulk Transconductance, g mb

26 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 26 Gate Resistance

27 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 27 MOS Small Signal Model with Capacitance

28 University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 28 C-V of NMOS

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