Simple piezoresistive pressure sensor

Simple piezoresistive accelerometer

Simple capacitive accelerometer C(x)=C(x(a)) Cap wafer Cap wafer may be micromachined silicon, pyrex, … Serves as over-range protection, and damping Typically would have a bottom cap as well.

Simple capacitive pressure sensor C(x)=C(x(P))

ADXL50 Accelerometer +-50g Polysilicon MEMS & BiCMOS 3x3mm die Integration of electronics!

ADXL50 Sensing Mechanism Balanced differential capacitor output Under acceleration, capacitor plates move changing capacitance and hence output voltage On-chip feedback circuit drives on-chip force-feedback to re-center capacitor plates (improved linearity).

Analog Devices Polysilicon MEMS

ADXL50 – block diagram http://www.analog.com/en/mems-and-sensors/imems-accelerometers/products/index.html

Rotation induces Coriolis acceleration Electrostatic Drive Circuit MEMS Gyroscope Chip Digital Output Proof Mass Sense Circuit Rotation induces Coriolis acceleration Electrostatic Drive Circuit J. Seeger, X. Jiang, and B. Boser

MEMS Gyroscope Chip 1mm Drive 0.01Å Sense J. Seeger, X. Jiang, and B. Boser

Two-Axis Gyro, IMI(Integrated Micro Instruments Inc.)/ADI (fab)

Single chip six-degree-of-freedom inertial measurement unit (uIMU) designed by IMI principals and fabricated by Sandia National Laboratories

TI Digital Micromirror Device

www.dlp.com

NEU/ADI/Radant/MAT Microswitches http://www.radantmems.com/radantmems/switchoperation.html Drain Source Gate Beam Surface Micromachined Post-Process Integration with CMOS 20-100 V Electrostatic Actuation ~100 Micron Size Drain Gate Source Beam SEM of NEU microswitch Feedthrough Dielectric Seal ring Microbump Landing Package Substrate MEMS MAT Microswitch

Contact Detail Contact End of Switch

Spectrometer cross-section Surface Micromachined Spring System Electrostatic Actuator Plates 4/21/2017

Fabricated Microspectrometers 4/21/2017

Intensity vs. Wavelength l = 575nm FWHM = 30nm RP = 20 l =515 nm FWHM = 25nm RP = 21 l =625nm FWHM = 39nm RP = 16 21

Packaged Plasma Source Top View Die in Hybrid Package Side View

Fabrication SEM of Interdigitated Capacitor Structure

Optical MEMS Vibration Sensors Uniform cantilever beam Foster Miller - Diaphragm Cantilevered paddle Cantilevered supported diaphragm

Optically interrogated MEMS sensors 55 mm length cantilevered paddle after 7 hours of B.O.E. releasing and lifted up with a 1mm probe (~0.35mm thick, 2mm gap)

Courtesy Connie Chang-Hasnain

Courtesy Connie Chang-Hasnain

Micromachining Ink Jet Nozzles Microtechnology group, TU Berlin

(UCLA, Fan)

(Gruning)

Gene chips, proteomics arrays.

NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow. Roukes Group Cal Tech Tito

From Ashcroft and Mermin, Solid State Physics.

Other: NSF-Funded NSEC, Center for High-Rate Nanomanufacturing (CHN): High-rate Directed Self-Assembly of Nanoelements Proof of Concept Testbed Nanotube Memory Device Partner: Nantero first to make memory devices using nanotubes Properties: nonvolatile, high speed at <3ns, lifetime (>1015 cycles), resistant to heat, cold, magnetism, vibration, and cosmic radiation. Nanotemplate: Layer of assembled nanostructures transferred to a wafer. Template is intended to be used for thousands of wafers.

Switch Logic, 1996, Zavracky, Northeastern Inverter NOR Gate

Simple Carbon Nanotube Switch Diameter: 1.2 nm Elastic Modulus: 1 TPa Electrostatic Gap: 2 nm Binding Energy to Substrate: 8.7x10-20 J/nm Length at which adhesion = restoring force: 16 nm Actuation Voltage at 16 nm = 2 V Resonant frequency at 16 nm = 25 GHz Electric Field = 109 V/m or 107 V/cm + Geom. (F-N tunneling at > 107 V/cm) Stored Mechanical Energy (1/2 k x2 ) = 4 x 10-19 J = 2.5 eV 4 x 10-19 = ½ CV2 gives C = 2 x 10-19 << electrode capacitance! Much more energy stored in local electrodes than switch.

Biological Nanomotor