Digital Integrated Circuits 10: Short-Channel MOSFETs

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Presentation transcript:

Digital Integrated Circuits 10: Short-Channel MOSFETs Revision 2009 02 12

Short Channel MOS Physics Short-Channel Effect Narrow-Channel Effect Drain-Induced Barrier Lowering Channel Length Modulation Field-Dependent Mobility and Velocity Saturation

Short-Channel Effect (SCE)

Drain-Induced Barrier Lowering (DIBL) The subthreshold current becomes a strong function of the drain-to-source bias – an indicator of short-channel behavior.

Channel Length Modulation (CLM) linear saturation

Carrier Velocity Saturation

Short-Channel MOS Operation linear saturation

Long- and Short-Channel n-MOSFETS The long-channel equations overestimate the drain current and the drain-to-source voltage for saturation.

Long- and Short-Channel p-MOSFETS Short channel equations should be used for L < 0.5 mm.