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Field-Effect Transistors Based on Chapter 11 of the textbook

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1 Field-Effect Transistors Based on Chapter 11 of the textbook
The concept that forms the family of field-effect transistors, or FETs is that an external electric field may be used to vary the conductivity of a channel, causing the FET to behave either as a voltage controlled resistor or as a voltage-controlled current source. FETs are the dominant family in today’s integrated electronics, and although these transistors come in several different configurations, it is possible to understand the operation of the different devices by focusing on one type.

2 Classification of Field-Effect Transistors
Figure 11.1

3 Drain Characteristic Curves for a Typical NMOS Transistor with
VT = 2 V and K = 1.5 mA/V2 Figure 11.5

4 The n-Channel Enhancement MOSFET Circuit and Drain Characteristic
Figure 11.6

5 MOSFET Small-Signal Model
Figure 11.13

6 N-Channel Enhancement Mode MOSFET

7 iD-vDS Characteristics

8 Operation of the n-Channel Enhancement-Mode MOSFET

9 Large-Signal Equivalent Circuit Model of the n-Channel MOSFET in Saturation.

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