H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Report on PXD Session.

Slides:

Advertisements

Similar presentations

Radiation damage in silicon sensors

Advertisements

H.-G. Moser Max-Planck-Institut für Physik MPI Semiconductor Laboratory (Halbleiterlabor: HLL) Common project of the: Max-Planck-Institut fuer Physik (Werner.

2nd Open Meeting of the SuperKEKB Collaboration, KEK, March 2009 Ladislav Andricek, MPI fuer Physik, HLL 1 DEPFET Sensor R&D and Prototyping - Status -

Actividades de I+D en IGFAE/USC Pablo Vázquez (IGFAE-USC) IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre.

Simulation Studies of a (DEPFET) Vertex Detector for SuperBelle Ariane Frey, Max-Planck-Institut für Physik München Contents: Software framework Simulation.

Victoria04 R. Frey1 Silicon/Tungsten ECal Status and Progress Ray Frey University of Oregon Victoria ALCPG Workshop July 29, 2004 Overview Current R&D.

Andrei Nomerotski 1 3D ISIS : Different approach to ISIS Andrei Nomerotski, LCFI Collaboration Meeting Bristol, 20 June 2006 Outline  What is 3D ? u Reviewed.

AIDA annual meeting,Vienna, 26th March 2014Václav Vrba, Institute of Physics, Prague 1  design of sensors for production submission  design of the readout.

Fine Pixel CCD Option for the ILC Vertex Detector

Semi-conductor Detectors HEP and Accelerators Geoffrey Taylor ARC Centre for Particle Physics at the Terascale (CoEPP) The University of Melbourne.

TCAD Simulation for SOI Pixel Detector

ECFA ILC Workshop, November 2005, ViennaLadislav Andricek, MPI für Physik, HLL DEPFET Project Status - in Summary Technology development thinning technology.

High-resolution, fast and radiation-hard silicon tracking station CBM collaboration meeting March 2005 STS working group.

SuperKEKB 3nd open meeting, July Hans-Günther Moser MPI für Physik PXD Summary Other talks in software, SVD and DAQ sessions.

ILC VXD Review, Fermilab, October 2007 Ariane Frey, MPI für Physik DEPFET Vertex Detector Simulation and Physics Performance Ariane Frey for the DEPFET.

SuperKEKB 2nd open meeting March 17-19, 2009 Hans-Günther Moser MPI für Physik PXD Session SOI: more information: see TIPP09 -> submission in February,

SLHC SG: ATLAS Pixel G. Darbo - INFN / Genova SLHC SG, July 2004 ATLAS Pixel at SLHC G. Darbo - INFN / Genova Talk overview: A table with different High.

Vertex Detector for GLD 3 Mar Y. Sugimoto KEK.

Super-Belle Vertexing Talk at Super B Factory Workshop Jan T. Tsuboyama (KEK) Super B factory Vertex group Please visit

ILC VXD Review, Fermilab, October 23, 2007 Hans-Günther Moser, MPI für Physik DEPFET Devices Hans-Gunther Moser for the DEPFET Collaboration (

1 FNAL Pixel R&D Status R. Lipton Brief overview due to 3 failed MS Powerpoint versions –3D electronics New technologies for vertical integration of electronics.

Thin Silicon R&D for LC applications D. Bortoletto Purdue University Status report Hybrid Pixel Detectors for LC.

Vertex 2005, Nikko Manfred Pernicka, HEPHY Vienna 1.

AMS HVCMOS status Raimon Casanova Mohr 14/05/2015.

FPCCD Vertex detector 22 Dec Y. Sugimoto KEK.

Apollo Go, NCU Taiwan BES III Luminosity Monitor Apollo Go National Central University, Taiwan September 16, 2002.

Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek

LCWS08, Chicago, November 2008 Ladislav Andricek, MPI fuer Physik, HLL 1 DEPFET Active Pixel Sensors - Status and Plans - Ladislav Andricek for the DEPFET.

H.-G. Moser Max-Planck-Institut fuer Physik 1 st open meeting SuperBelle KEK Summary of PXD Session 1 Status of CAPSH. Hoedlmoser (Video)

C. Kiesling, 1st Open Meeting of the SuperKEKB Collaboration, KEK, Dec , The DEPFET-Project: European Collaboration for a Pixel SuperBelle.

The development of the readout ASIC for the pair-monitor with SOI technology ~irradiation test~ Yutaro Sato Tohoku Univ. 29 th Mar  Introduction.

High-resolution, fast and radiation-hard silicon tracking station CBM collaboration meeting March 2005 STS working group.

CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC Gianluca Traversi 1,2

The Belle II DEPFET Pixel Detector

ILD Vertex Detector Y. Sugimoto 2012/5/24 ILD

SuperKEKB 3nd open meeting July 7-9, 2009 Hans-Günther Moser MPI für Physik Sensor and ASIC R&D Sensor Prototype Production: running, ASICs: Switcher,

PXD ASIC review, October 2014 ASIC Review 1 H-.G. Moser, 18 th B2GM, June 2014 Date and Location MPP, October 27, 10:00 – October 28, 16:00, Room 313 Reviewers:

H.-G. Moser Max-Planck-Institut für Physik 2nd DEPFET workshop 3-6 May 2009 Open Issues Readout cycle: 10 µs or 20 µs ? Advantages of 20 µs: - smaller.

PXD EVO November 18, 2014 ASIC Review 1 H-.G. Moser, 18 th B2GM, June 2014 Date and Location MPP, October 27, 10:00 – October 28, 16:00, Room 313 Reviewers:

1 Characterization of Pilot Run Modules for the Belle II Pixel Detector Felix Müller Max-Planck-Institut für Physik IMPRS Young Scientist Workshop Ringberg.

H.-G. Moser Max-Planck-Institut für Physik Future Vertex Detectors in HEP Projects: LHC (upgrade 2018+) Belle 2 (upgrade 2018+) ILC/CLIC (2020+)

Low Mass, Radiation Hard Vertex Detectors R. Lipton, Fermilab Future experiments will require pixelated vertex detectors with radiation hardness superior.

6 th Belle PAC, KEK, February 26 and PXD - EVO, 5/March/2012 Ladislav Andricek, MPI für Physik, HLL 1

Hans-Günther Moser, PXD PXD Summary 1 PXD Sessions: Highlights 1)Sensor production 2) EMCM (& bump bonding) 3)System Simulations 4)Power Supplies and Services.

Power Supply for DEPFET in SuperBelle Pablo Vazquez IGFAE-USC Henryk Palka INP-KRA.

H.J.Simonis, IEKP Uni-Karlsruhe, SuperKEKB meeting, KEK 18.mar 2009 Thermal studies for the DEPFET Pixel Detector IFIC – University of Valencia (Spain)

H.-G. Moser, 6 th PXD/SVD workshop, Pisa, Oct PXD Summary 1 DEPFET Sensors production yield inter-metal insulation EMCM electronic tests ASICs Schedule.

TILC08, Sendai, March DEPFET Active Pixel Sensors for the ILC Marcel Vos for the DEPFET Collaboration (

H.-G. Moser Max-Planck-Institut for Physics, Munich Vertex07 Lake Placid, NY 9/25/2007 DEPFET Active Pixel Detectors H.-G. Moser on behalf of the DEPFET.

Clear Performance and Demonstration of a novel Clear Concept for DEPFET Active Pixel Sensors Stefan Rummel Max-Planck-Institut für Physik – Halbleiterlabor.

PXD ASIC Review, July 2015 Ladislav Andricek, MPG Halbleiterlabor Belle II PXD ASIC Review, the 2 nd …….. 1.

H.-G. Moser Max-Planck-Institut fuer Physik DEPFET Meeting Heidelberg Sept DEPFET Geometry for SuperBelle Sensor Geometry Pixel Pitch Constant/variable.

International DEPFET Workshop Stefan Rummel; MPI for Physics 1 Results from harsh X-Ray irradiation Stefan Rummel MPI for Physics – Halbleiterlabor International.

H.-G. Moser Halbleiterlabor der Max-Planck- Institute für Physik und extraterrestrische Physik VIPS LP09, Hamburg August 18, R&D on monolithic and.

1 First large DEPFET pixel modules for the Belle II Pixel Detector Felix Müller Max-Planck-Institut für Physik DPG-Frühjahrstagung der Teilchenphysik,

ASICs1 Drain Current Digitizer Chip (DCD) Status and Future Plans.

Testsystems PXD6 - testing plans overview - by Jelena NINKOVIC Hybrid Boards for PXD6 - by Christian KOFFMANE Source measurements on DEPFET matrices using.

 Silicon Vertex Detector Upgrade for the Belle II Experiment

Thinning and Plans for SuperBelle

FBK / INFN Roma, November , 17th 2009 G. Darbo - INFN / Genova

The CSOI approach for integrated micro channels

Gated Mode - System Aspects

Gated Mode - System Aspects

DEPFET Active Pixel Sensors (for the ILC)

PXD Summary Tests PXD9 Pilot Production ASICs Components Plans:

The Belle II Vertex Pixel Detector (PXD)

The SuperB Silicon Vertex Tracker

Lars Reuen, 7th Conference on Position Sensitive Devices, Liverpool

Status of SOI Pixel Development

Perugia SuperB Workshop June 16-19, 2009

Presentation transcript:

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Report on PXD Session

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Overview on pixel layer requirements (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Overview on pixel layer requirements (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Overview on pixel layer requirements (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Overview on pixel layer requirements (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Overview on pixel layer requirements (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Overview on pixel layer requirements (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Pixel Simulations (A. Frey, Munich)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Pixel Simulations (A. Frey, Munich) Proposal: Consider Mokka framework (Geant4) for general superBelle MC

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Pixel Simulations (A. Frey, Munich)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Pixel Simulations (A. Frey, Munich)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 DEPFET Technology (A. Andricek, Munich)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 DEPFET Technology (A. Andricek, Munich)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 DEPFET Technology (A. Andricek, Munich)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 DEPFET Technology (A. Andricek, Munich) ASICs: DCD and Switcher are deep submicron technologies rad. hard beyond 10Mrad (with the appropriate design) DEPFETs: Not that easy … … noise performance seems to be okay up to 8 Mrad threshold shift could be compensated by re-adjustment of the Switcher voltages V t variation at higher TID (reason for this under investigation) and hence I D at a given V Gate has to be compensated by the DCD slightly higher noise of the f/e technological counter measures: thinner gate oxide reduces |Vt| further optimization of the gate dielectrics In conclusion: The DEPFET gets worse at high TIDs (8Mrad). Probably ok for several years of running

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 DEPFET Technology (A. Andricek, Munich) Thinning technology established 50 m + frame All silicon ~0.14% X 0 (average) Collaboration forming First superBelle prototypes 2010 (PXD5) Schedule to build complete detector till 2013

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 SOI Technology (T. Tsuboyama, KEK)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 SOI Technology (T. Tsuboyama, KEK) 49 Mrad! Typical problem: Back gate effect Chip submitted, still waiting Similar project by Hawaii (same submission)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 CMOS Technology (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 CMOS Technology (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 CMOS Technology (G. Varner, Hawaii)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Data Rate & DAQ (C. Lacasta, Valencia)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Data Rate & DAQ (C. Lacasta, Valencia) Gbit/s

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 New Technologies: 3D Ron Lipton (Plenary)

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 New Technologies: 3D Ron Lipton (Plenary) Test run with MIT: VIP chip: 3 layer, no sensor Low yield, many problems Proof of principle! Continue with Tezzaron/Ziptonix Powerful technology Time stamp T = 300 ns: 1/33 reduction of Occupancy!

H.-G. Moser Max-Planck-Institut fuer Physik 2 nd open meeting July 4, 2008 Conclusions Pixel Detector for SuperBelle should: allow robust vertexing at high background improve performance with respect to SVD2 => fast readout (or time stamp), thin Technologies: DEPFET SOI CMOS-MAPS 3D-technologie Aiming for installation in 2013 the DEPFET option seems to be the most realisitc (ok for running ~years at initial luminosity) => Tight schedule: start now! For final luminosity: consider ALL options