Presentation is loading. Please wait.

Presentation is loading. Please wait.

Ischia, 21-23 giugno 2006Riunione Annuale GE 2006 Characterization of charge trapping in SiO 2 /Al 2 O 3 dielectric stacks by pulsed C-V technique G. Puzzilli.

Similar presentations


Presentation on theme: "Ischia, 21-23 giugno 2006Riunione Annuale GE 2006 Characterization of charge trapping in SiO 2 /Al 2 O 3 dielectric stacks by pulsed C-V technique G. Puzzilli."— Presentation transcript:

1 Ischia, giugno 2006Riunione Annuale GE 2006 Characterization of charge trapping in SiO 2 /Al 2 O 3 dielectric stacks by pulsed C-V technique G. Puzzilli F. Irrera IMEC Flash MemoryGroup

2 Ischia, giugno 2006Riunione Annuale GE 2006 Extraction of High-K charge trapping characteristics minimizing the impact of trapped charge on the measurement results Target of the work G. Puzzilli

3 Ischia, giugno 2006Riunione Annuale GE 2006 Set-Up VGVG CH1 Scope CH2 CH1 Scope CH2 V OUT =-AI IN V OUT =-AI IN Calibration on SiO 2 sample G. Puzzilli

4 Ischia, giugno 2006Riunione Annuale GE 2006 C-V and I-t measurements Fast current transients can be monitored Current peak is close to the trap free value Leakage Displacement Flatband voltage shifts can be measured avoiding underestimation due to detrapping G. Puzzilli HfO 2 Sample

5 Ischia, giugno 2006Riunione Annuale GE 2006 Conclusions Measurement time resolution in the order of s allows for accurate extraction of fresh sample electrical features Characterization of trapping phenomena on a millisecond timescale G. Puzzilli


Download ppt "Ischia, 21-23 giugno 2006Riunione Annuale GE 2006 Characterization of charge trapping in SiO 2 /Al 2 O 3 dielectric stacks by pulsed C-V technique G. Puzzilli."

Similar presentations


Ads by Google