Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  MAPS technology decoupled charge sensing and signal transfer (improved radiation tolerance, random access, etc.), small pitch (high tracking precision), low amount of material, fast readout, moderate price, SoC, etc. advantages:

Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  MIMOSA V 1×10 6 pixel device  0.6 µm CMOS process with 14 µm epitaxial layer,  4 matrices of 512 × 512 pixels read-out in parallel; pixel: 17 × 17 µm 2, diodes: P pm 2, P pm 2, control logic and all pads aligned along one side, results: Noise mean ENC: e - detection efficiency MIPs (  ): 99.3% spatial resolution MIPs (  ): 1.7 µm pixel-pixel gain nonuiformity ~3% MIMOSA V  Chip-Detector design MIMOSA = Minimum Ionising Particle MOS APS 3T design Chip design not optimised for any particular application, aimed at relativistic charged particle detection - DESIGNED in joined IReS- LEPSI effort in 2001

Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  Architecture of the prototype  Matrix of sequentially addressed pixels, multiplexed on single output buffer.  MIMOSA V 1×10 6 pixel device

Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  MIMOSA V 1×10 6 pixel device  Default Readout Method  Readout time = Integration time ~8 40 MHz f clk.

Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  back-side illuminated MIMOSAV – fabrication

Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  back-side illuminated MIMOSA V - mounting  Back-side illuminated thinned M5 device – a test vehicle for demonstration of 20 keV E - detection capability for Beam Monitoring system and other affined applications Bonding pads 85×85 µm 2 inside 10 µm deep wells positive response from microbonding sa - idea of use Au ball-bonding technique – not successful because of pad cratering finally 17 µm Al wedge bonding with special deep wedge was used