1. Development of an Active Pixel Sensor Vertex Detector H. Matis, F. Bieser, G. Rai, F. Retiere, S. Wurzel, H. Wieman, E. Yamamato, LBNL S. Kleinfelder, K. Singh, UCI H. Bichel, U. Washington

2. H. Matis (hsmatis@lbl.gov)2Pixel2002 STAR Needs a Thin Vertex Detector to Measure Charm at RHIC High precision - ~4 µm resolution Low mass - 1 GeV/c particles - need low multiple scattering Medium radiation environment - 50 krad/y - @ 40x RHIC luminosity 40 µm 80 µm 160 µm320 µm 640 µm

3. H. Matis (hsmatis@lbl.gov)3Pixel2002 Active Pixel Sensor (APS) – Attractive Technology Has same advantages of CCDs –Small pixels –Can thin wafers Plus –Standard CMOS process –More radiation resistant –Low power –Put extra circuits on chip Minus –New Technology –Lots to learn

4. H. Matis (hsmatis@lbl.gov)4Pixel2002 Epitaxial Sensor Medium High-resistivity epitaxial silicon used as a sensor Higher doped P bulk reflects and confines electrons Slower, more lateral diffusion and recombination 100% fill factor achieved

5. H. Matis (hsmatis@lbl.gov)5Pixel2002 CMOS APS with Epitaxial Sensor

6. H. Matis (hsmatis@lbl.gov)6Pixel2002 Three Example CMOS Pixel Circuits Passive Pixel Sensor (PPS, left) Active Pixel Sensor (APS, middle) APS with sample and hold / shutter (right)

7. H. Matis (hsmatis@lbl.gov)7Pixel2002 “ EPI-1” Prototype Epi / APS Imager 0.25 µm CMOS 128 x 128 array 4 pixel variants 20 x 20 µm pixels 8-10 µm Epi Fabbed at TSMC

8. H. Matis (hsmatis@lbl.gov)8Pixel2002 4 Configurations 4 variants: –Small pickup –4x small pickups –Small pickup + direct injection –Large pickup + Direct injection

9. H. Matis (hsmatis@lbl.gov)9Pixel2002 APS Pixel Quadrants

10. H. Matis (hsmatis@lbl.gov)10Pixel2002 Sr 90 Electron Source Quadrant of 64 x 64 pixels with (left) and without (right) Sr 90 source applied.

11. H. Matis (hsmatis@lbl.gov)11Pixel2002 1.5 GeV electron source (ALS) Quadrant with (left) and without (right) electron source applied.

12. H. Matis (hsmatis@lbl.gov)12Pixel2002 Energy spectrum of 1.5 GeV electrons Circles are measured points, dotted line shows calculated result for 8 µm epitaxial layer.

13. H. Matis (hsmatis@lbl.gov)13Pixel2002 Version II - 16 different configurations Row 1 - Pixels with one to four distributed diodes. Increase in charge collected within one pixel –Less charge diffusion to neighboring pixels –But lower gain due to increased capacitance

14. H. Matis (hsmatis@lbl.gov)14Pixel2002 Sample Fe55 Spectra 1638 electrons

15. H. Matis (hsmatis@lbl.gov)15Pixel2002 Speed Matters Output of ADC Currently reading a pixel with 500 kHz clock - limited by external ADC Easily could read at 1 MHz Need 250 ms to read out 1000 x 1000 chip with 4 channels at this speed Working to improve speed for next generation 1 µs/division

16. H. Matis (hsmatis@lbl.gov)16Pixel2002 Total Collected Charge (Fe-55)

17. H. Matis (hsmatis@lbl.gov)17Pixel2002 Signal to Noise (Fe-55)

18. H. Matis (hsmatis@lbl.gov)18Pixel2002 Diode Topology vs.. Collected Charge Normalized charge plots. More diodes yields greater percentage of charge collected

19. H. Matis (hsmatis@lbl.gov)19Pixel2002 Diode Topology vs. Signal to Noise More diodes reduces S/N except for the single pixel case (no summation of neighboring pixels)

20. H. Matis (hsmatis@lbl.gov)20Pixel2002 Other Configurations - Rows 2-4 Row 2 - Same as Row 1 except larger output transistor Row 3 - Centered pixel 1 small pickup 2 medium well pickup 3 large well pickup 4 large diffusion Row 4 -Sample and Hold 1 small well pickup 2 medium well pickup 3 large diffusion 4 large diffusion

21. H. Matis (hsmatis@lbl.gov)21Pixel2002 S/N All Sectors Row 1Row 2 Row 3 Row 4

22. H. Matis (hsmatis@lbl.gov)22Pixel2002 Charge Diffusion Increasing number of diode collection points increases collection with lower signal Sample and Hold collects charge in few pixels but much lower signal Row 1 - 1 diode Row 1 - 4 diode Row 4 - Sample and Hold

23. H. Matis (hsmatis@lbl.gov)23Pixel2002 Radiation Hardness CCDs show radiation effects ~ krad 3 year RHIC design luminosity - 3.5 krad or 1 x 10 11 55 MeV p’s/cm 3 year RHIC II at 40x design - 140 krad Expose unpowered chips to 55 MeV p’s at 88” cyclotron

24. H. Matis (hsmatis@lbl.gov)24Pixel2002 Pre Radiation Post Radiation 10 12 protons at 55 MeV Equivalent to 3 years at RHIC at 40x current luminosity

25. H. Matis (hsmatis@lbl.gov)25Pixel2002 1.5  10 11 protons, 55 MeV Equivalent to 0.5 y @ 40x current Luminosity of RHIC (RHIC II) 3 y @ RHIC II 1.5 y @ RHIC II 9 y @ RHIC II 30 y @ RHIC II Mrad

26. H. Matis (hsmatis@lbl.gov)26Pixel2002 > Mrad exposure

27. H. Matis (hsmatis@lbl.gov)27Pixel2002 Signal Loss to Radiation Signal does decrease with radiation dose Noise increases Small change in radiation region of our interest Significant Mrad effects

28. H. Matis (hsmatis@lbl.gov)28Pixel2002 Thinned Silicon CCD detector thin to epi layer (with backing) Testing 50 µm and 100 µm wafers 50 µm wafer can be stretched to >1 kg (limit is our stain gauge) Build mechanical support easy to replace modules - beam accident Silicon

29. H. Matis (hsmatis@lbl.gov)29Pixel2002 Mechanical Configuration

30. H. Matis (hsmatis@lbl.gov)30Pixel2002 Summary and Conclusions A CMOS active pixel sensor array using an epitaxial silicon sensor has been designed and tested. –Two 128 by 128 pixel arrays were fabricated –Both used a standard digital 0.25 micron CMOS technology –Both used 8-10 micron epitaxial silicon sensors Variety of pixel topologies and circuits were tested. Optimum performance in sparse-event environment was obtained by simplest, highest gain pixel circuits. Tested with 1.5 GeV electrons and Fe-55 X-rays Obtained 13 electrons RMS noise and an SNR for single Fe-55 X-rays (5.9 keV) of greater than 30. Standard digital CMOS APS can resolve individual gamma rays and minimum-ionizing charged particles. CMOS technology appropriate to radiation environment of RHIC.

31. H. Matis (hsmatis@lbl.gov)31Pixel2002 Future Must fully understand noise sources – improve signal to noise. Reduce charge diffusion New faster chip in 0.5 µm process ready soon. Larger epi layer Increase speed of chip –1000 x 1000 array with four parallel channels - 50 ns readout  12.5 ms cycle time Mechanical Prototyping. Fixture ready in a week. Great promise of APS technology at RHIC

32. The End