SINTEF Wafers We studied two wafers. Wafer #24 and one oxygenated wafer.

PSI Devices Purdue Devices Diode cluster JHU Devices BTev Devices N + side

Design A Design F Design G Pixel Design

Measurement A We measure the total leakage current. N N+N+ P+P+

Wafer #24 IV measurement on wafer 24 is complete. We are now going to wire bond it to study single pixel characteristics.

Summary

Except Pixel 1, AI has high breakdown.

Pixel 4 - design F, Pixel 5 - design G Design F and G also have high breakdown voltage.

V breakdown < pixel arrays. 300 < V breakdown < pixel arrays 500 < V breakdown - 7 pixel arrays Current per unit area at 270 V nA/cm^2 Performance

SINTEF Oxygenated Wafer We measured 15 pixel arrays, Purdue and PSI designs, on the oxygenated wafer.

Breakdown voltage is low

Except Pixel 6, breakdown is around 250 voltage.

V breakdown < pixel arrays. 200 < V breakdown < pixel arrays 250 < V breakdown - 1 pixel array Current per unit area at 270 V - 11 nA/cm^2 (Data for pixel 6 only. For all other pixel arrays V breakdown < 250) Performance