1. Summary of 3D SINTEF CMS pixel sensors R&D at Purdue
Enver Alagoz1, O. Koybasi1, A. Krzywda1, M. Kress1, K. Arndt1, D. Bortoletto1, I. Shipsey1, G. Bolla1, T. E. Hansen2, A. Kok2, T. A. Hansen2, N. Lietaer2, G. U. Jensen2, A. Summanwar2, R. Riviera3, L. Uplegger3, and S. W. L. Kwan3
1Physics Department, Purdue University, West Lafayette, IN USA
2SINTEF, SINTEF MiNaLab, Blindern, 0314 Oslo, Norway
3Fermilab, Batavia, IL USA

2. Outline SINTEF 3D pixel sensors for CMS Summary and outlook Lab tests
Testbeam at FNAL
Irradiation study
Summary and outlook

3. 3D sensors The edge is an electrode!
Dead volume at the Edge < 2 microns!
By C. Kenney in 1997
By S. Parker in 1995
NIMA 395 (1997) 328
IEEE Trans Nucl Sci 464 (1999) 1224
IEEE Trans Nucl Sci 482 (2001) 189
IEEE Trans Nucl Sci 485 (2001) 1629
IEEE Trans Nucl Sci 48 6 (2001) 2405
CERN Courier, Vol 43, Jan 2003, pp 23-26
NIM A 509 (2003) 86-91
NIM A 524 (2004)
NIM A 549 (2006) 127
NIM A 560 (2006) 272
IEEE TNS 53 (2006) 1676
NIM A 587 (2008)
Advantages:
Low noise
Lower depletion voltage
Large area coverage
Fast response
Short drift length
Less trapping

4. SINTEF 3D Wafers Wafer B5 Wafer B2-16 B5 : 280µm substrate thickness
P-type wafers include sensors for:
CMS
ATLAS
MediPix
MediPix
Wafer B2-16
MediPix
B5 : 280µm substrate thickness
B2-16 : 200µm substrate thickness

5. 3D CMS pixel layouts 2E Configuration 4E Configuration 100 μm 150 μm
n+ (readout)
p+ (bias)
4E Configuration
100 μm
150 μm

6. IV measurements
T = 21 °C

7. Lab V = -40 V : T=21 °C

8. Noise T=21 °C
Unable to measure noise at Vbias < 40V for 4E sensors

9. CLOCK AND TRIGGER DISTRIBUTION
FNAL testbeam
120 GeV protons
No B field
BEAM
CONTROL ROOM
DUT
PIXEL DETECTORS
SCINTILLATORS
3.7V POWER SUPPLY
ACELLERATOR CLOCK
CLOCK AND TRIGGER DISTRIBUTION
Meson Area
Purdue 3D plaquette
Plastic
protection
Cooling
tubes

10. Beam test results 2E_WB5_2
March 2010 beam test data
Tsensor ≈ 16 oC
Vbias = -40V

11. Irradiation study Sensors irradiated in Los Alamos National Lab
with 800 MeV protons (1MeV neutron equivalent factor ~1)
fluences: 1, 2.2, and 7.2x1015 neq/cm2 with 11% beam uncertainty
at room temperature
no bias applied
Annealed at 80 °C for 1 hour
All ROCs were dead (probably due to bad handling)

12. Irradiation study Leakage current related damage rate α
ΔΙ[A] = αVΦ[neq/cm2] where V is sensor active volume
αaverage(2E) = 2.8x10-17 A/cm vs αRD48 = 3.99x10-17 A/cm
αaverage(4E) = 4.5x10-17 A/cm
4E α values are higher than 2Es
Full depletion not reached due to early breakdown
2E & 4E sensor currents at the highest Φ are ~1 mA

13. Summary All sensors were wire bonded and assembled at Purdue
Lab characterization tests:
IV results: breakdown > -100 V
All performed well but with higher noises vs CMS planar sensors
Good bump bond quality
Testbeam:
Testbeam at FNAL with 120 GeV protons in 2010
Data taken at several voltages and thresholds
Spatial resolution analysis is ongoing
Irradiation:
6 sensors were irradiated to fluences 1,2.2, and 7.2x1015 neq/cm2
No lab characterization tests done due to dead ROCs
Leakage current damage rates determined

14. 3D sensor inventory Total: 23 3D sensors
Date Recived
Name
Type
Wafer
Bump Bond
Assembled on
IV scan
Functional ROC? at
Dec-2009
3D_2E_B216_6 2E
B2-16
IZM
Left VHDI
Good, -120V
Yes
3D_2E_WB5_2 B5
3D_4E_WB5_8 4E
Good, -100V
3D_4E_WB216_5
Good, -110V
May-2009
3D_2E_B216_2
3D_2E_B5_6
3D_2E_B5_7
Bad, -10V
3D_4E_B5_4
3D_4E_B5_5
Oct-2010
3D_2E_B2_1 B2
Right VHDI
Good, -140V
3D_2E_B2_2
3D_4E_B2-10_1
B2-10
Good, -115V
3D_2E_B2-10_2
3D_2E_B2-10_3
3D_2E_B2-10_4
Bad, 0V
3D_2E_B2-10_5
Jul-2010
3D_2E_B2-6_4x6yA
B2-6
SELEX
Bad, -20V No
3D_2E_B2-6_4x6yB
3D_2E_B2-6_4x6yC
Bad, -120V
3D_2E_B2-6_4x6yD
3D_2E_B2-6_4x7yB
Feb-2011
3D_2E_6 ?
no IV taken
Broken
3D_1E_7 1E
Good, -50V
3D_1E_8
BD = Breakdown
Total: 23 3D sensors
IZM bump bonded [SnPb]: 11x 2E and 5x 4E (SINTEF)
SELEX bump bond [In]:5x 2Es (SINTEF), 2E (FBK), 2x 1E (FBK)
The 3D sensors listed below were irradiated in Los Alamos Lab.
Radiation: protons
Fluences: 1e15, 2e15, 7.2e p/cm2
Energy: 800 MeV
2E sensors
4E sensors
3D_4E_B2-16_5
3D_4E_B5_8

15. 3DC
Czech Technical University, Fermilab, Purdue University, SINTEF, SLAC, University of Hawaii, University of Manchester