1. FPIX_flip_chip_test module calibration tests November 14 th 2012

2. Sensor 2 SINTEF 2004 1x1 bump bonded – Planar 300 μm thick pixel sensor Flip-chipped then reflow Assembled on a new testboard on November 7 th, and 12 th 2012 No post-dicing IV was performed for the first sensor 2

3. Leakage current First sensor’s before BBM IV was not performed! 3

4. Full calibration summary – First sensor ROC pixel alive test  Bump-bonding test  4 Second sensor has similar calibration Bias = -150 V

5. Testing bum-bond with forward bias test Run pixel alive test ROC on with sensor at reverse bias ROC on with sensor at forward bias Idea: – Forward bias will saturate the sensor, causing pre- amplifiers in chip pixels saturate: chip pixels disappear from the pixel alive test map if bump- bonds are in contact 5

6. Testing bum-bond with forward bias test SINTEF 2004 1x1 First sensor NO BIAS REVERSE BIAS FORWARD BIAS SINTEF 2004 1x1 Second sensor 6 REVERSE BIAS = -150 V FORWARD BIAS = +10 V

7. Radioactive source test (Sr-90) Bias = -150V Mean = 22 ke- MP = 18 ke- 285 μm thick Double pixel hits In one trigger SINTEF 2004 1x1 Second sensor SINTEF 2004 1x1 First sensor Bias = -150V Mean = 23 ke- MP = 18 ke- 285 μm thick 7

8. Charge collection  Charge distribution mean values versus bias voltages  Scan not performed for the second sensor 8

9. Summary Two SINTEF 2004 1x1 sensors bump bonded Both sensor ROCs work fine – Good calibrations: Gain, SCurve, Vsf etc – Full calibration Forward bias current and standard methods showed that all bump-bonds are in good contact – IV suggest a good ROC to sensor contact established since ground goes through ROC for sensor HV Standard bump-bond algorithm implemented in PSI DAQ software consistent with forward bias test Source tests showed a good charge collection 9

10. SINTEF 2011 1x1 SENSORS 10

11. 11

12. Past design1x2 in previous production L1, S1, S2, S3, S5 New in this batch. Maximized pixel area S8 L2, L3, S6 New in this batch. Removed asimmetry S4, S7 Note: S1, S2 and S3 have slim edges (S1 the slimmest and increasing in S2 and S3) SINTEF_2011 1x1 sensors 12

13. November 13, 2012 13

14. Sensor: SINTEF_2011_WA15_S5 Planar 300 μm thick Bump bonded to a ROC on 11-13-2012 - Flip-chipped then reflown Assembled on a new testboard on November 13 th 2012 14

15. A15 S5 - Leakage current 15

16. A15 S5 - Full calibration summary (-150V) ROC pixel alive test  Bump-bonding test  (this test found 3185 dead bumps) 16 Bias = -150 V

17. A15 S5 - Full calibration summary (-400V) ROC pixel alive test  Bump-bonding test  (this test found 1 dead bumps) 17 Bias = -400 V

18. A15 S5 - Testing bum-bond with forward bias test  SINTEF_2011_WA15_S5 pixel alive test at REVERSE BIAS  SINTEF_2011_WA15_S5 pixel alive test at NO BIAS 18 REVERSE BIAS = -150 V FORWARD BIAS = +10 V pixel alive test at FORWARD BIAS pixel alive test at REVERSE BIAS with LIGHT

19. A15 S5 - Radioactive source test (Sr-90) Source above sensor center Source above sensor edge Pixel alive map at forward bias  Source placed on different locations above the sensor  No correlation found between forward bias pixel alive map and source hitmap  Can we trust forward bias test? 19 REVERSE BIAS = -150 V FORWARD BIAS = +10 V

20. A15 S5 - Radioactive source test (Sr-90) Bias = -150V Mean = 25 ke- MP = 21.5 ke- Thickness = 300 μm Double pixel hits In one trigger 20

21. Sensor: SINTEF_2011_WA15_S6 Planar 300 μm thick Bump bonded to a ROC on 11-13-2012 - Flip-chipped then reflow Assembled on a new testboard on November 13 th 2012 21

22. A15 S6 - Leakage current 22

23. A15 S6 - Full calibration summary (-150V) ROC pixel alive test  Bump-bonding test  (this test found 2488 dead bumps) 23 Bias = -150 V

24. A15 S6 - Full calibration summary (-300V) ROC pixel alive test  Bump-bonding test  (this test found 6 dead bumps) -400 V has also identical results 24 Bias = -300 V

25. A15 S6 - Testing bum-bond with forward bias test  SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS  SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA15_S6 pixel alive test at NO BIAS ~1200 pixels Forward bias: 1200 dead bumps PSI software test: 2488 dead bumps 25 REVERSE BIAS = -150 V FORWARD BIAS = +10 V

26. A15 S6 - Radioactive source test (Sr-90) Bias = -150V Mean = 20.7 ke- MP = 17.5 ke- Thickness = 300 μm Source hit map 26

27. Summary SINTEF 2011 S5 and S6 sensors bump bonded on 11- 13-2012 Both sensor ROCs work fine – Good calibrations: Gain, SCurve, Vsf etc – Full calibration with minimum effort Sensor breakdown voltages increased after assembly – No breakdown observed up to 800 V Bump-bond tests – Forward bias method: 1000 (S5), 1200 (S6) dead bumps – PSI method: 3185 (S5), 2488 (S6) dead bumps Source tests showed a good charge collection – Double hits in one trigger needs to removed from analysis – S6 will be retested with source 27

28. November 14, 2012 28

29. Sensor: SINTEF_2011_WA15_S7 Planar 300 μm thick Bump bonded to a ROC on 11-14-2012 - Flip-chipped then reflow Assembled on a new testboard on November 14 th 2012 IVs on wafer, before and after BBM, and on testboard measured 29

30. A15 S7 - Leakage current 30

31. A15 S7 - Full calibration summary ROC pixel alive test  Bump-bonding test  31 Bias = -200 V

32. A15 S7 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS pixel alive test at FORWARD BIAS  SINTEF_2011_WA15_S6 pixel alive test at NO BIAS 32 pixel alive test at REVERSE BIAS with LIGHT REVERSE BIAS = -200 V FORWARD BIAS = +10 V

33. A15 S7 - Radioactive source test (Sr-90) Bias = -200V Mean = 25 ke- MP = 21.7 ke- Thickness = 300 μm Source hit map 33

34. Sensor: SINTEF_2011_WA15_S8 Planar 300 μm thick Bump bonded to a ROC on 11-14-2012 - Flip-chipped then reflow Assembled on a new testboard on November 14 th 2012 IVs on wafer, before and after BBM, and on testboard measured 34

35. A15 S8 - Leakage current 35

36. A15 S8 - Full calibration summary ROC pixel alive test  Bump-bonding test  36 Bias = -200 V

37. A15 S8 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS 37 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA15_S6 pixel alive test with LIGHT at REVERSE BIAS

38. A15 S8 - Radioactive source test (Sr-90) Bias = -200V Mean = 26 ke- MP = 22.2 ke- Thickness = 300 μm Source hit map 38

39. Sensor: SINTEF_2011_WA17_S5 Planar 300 μm thick Bump bonded to a ROC on 11-15-2012 - Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before and after BBM, and on testboard measured 39

40. A17 S5 - Leakage current 40

41. A17 S5 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 67 dead bumps) 41 Bias = -200 V

42. A17 S5 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S5 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S5 pixel alive test at REVERSE BIAS 42 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S5 pixel alive test with LIGHT at REVERSE BIAS

43. A17 S5 - Radioactive source test (Sr-90) Bias = -200V Mean = 22.3 ke- MP = 19.7 ke- Thickness = 300 μm Source hit map 43

44. Sensor: SINTEF_2011_WA17_S6 Planar 300 μm thick Bump bonded to a ROC on 11-15-2012 - Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before and after BBM, and on testboard measured 44

45. A17 S6 - Leakage current 45

46. A17 S6 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 6 dead bumps) 46 Bias = -200 V

47. A17 S6 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S6 pixel alive test at REVERSE BIAS 47 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S6 pixel alive test with LIGHT at REVERSE BIAS

48. A17 S6 - Radioactive source test (Sr-90) Bias = -200V Mean = 26 ke- MP = 21.2 ke- Thickness = 300 μm 48 Source hit map

49. Sensor: SINTEF_2011_WA17_S7 Planar 300 μm thick Bump bonded to a ROC on 11-15-2012 - Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before, and on testboard measured 49

50. A17 S7 - Leakage current 50

51. A17 S7 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 15 dead bumps) 51 Bias = -200 V

52. A17 S7 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S7 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S7 pixel alive test at REVERSE BIAS 52 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S7 pixel alive test with LIGHT at REVERSE BIAS

53. A17 S7 - Radioactive source test (Sr-90) Bias = -200V Mean = 27 ke- MP = 21.4 ke- Thickness = 300 μm 53 Source hit map

54. Sensor: SINTEF_2011_WA17_S8 Planar 300 μm thick Bump bonded to a ROC on 11-15-2012 - Flip-chipped then reflow Assembled on a new testboard on November 15 th 2012 IVs on wafer, before, and on testboard measured 54

55. A17 S8 - Leakage current 55

56. A17 S8 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 2 dead bumps) 56 Bias = -200 V

57. A17 S8 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA17_S8 pixel alive test at FORWARD BIAS  SINTEF_2011_WA17_S8 pixel alive test at REVERSE BIAS 57 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA17_S8 pixel alive test with LIGHT at REVERSE BIAS

58. A17 S8 - Radioactive source test (Sr-90) Bias = -200V Mean = 25.5 ke- MP = 21 ke- Thickness = 300 μm 58 Source hit map

59. Sensor: SINTEF_2011_WA16_S5 Planar 300 μm thick Bump bonded to a ROC on 11-16-2012 - Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 59

60. A16 S5 - Leakage current 60

61. A16 S5 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 2 dead bumps) 61 Bias = -200 V

62. A16 S5 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S5 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S5 pixel alive test at REVERSE BIAS 62 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S5 pixel alive test with LIGHT at REVERSE BIAS

63. A16 S5 - Radioactive source test (Sr-90) Bias = -200V Mean = 26.7 ke- MP = 21.7 ke- Thickness = 300 μm 63 Source hit map

64. Sensor: SINTEF_2011_WA16_S6 Planar 300 μm thick Bump bonded to a ROC on 11-16-2012 - Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 64

65. A16 S6 - Leakage current 65

66. A16 S6 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 13 dead bumps) 66 Bias = -200 V

67. A16 S6 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S6 pixel alive test at REVERSE BIAS 67 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S6 pixel alive test with LIGHT at REVERSE BIAS

68. A16 S6 - Radioactive source test (Sr-90) Bias = -200V Mean = 27 ke- MP = 22.6 ke- Thickness = 300 μm 68 Source hit map

69. Sensor: SINTEF_2011_WA16_S7 Planar 300 μm thick Bump bonded to a ROC on 11-16-2012 - Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 69

70. A16 S7 - Leakage current 70

71. A16 S7 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 5 dead bumps) 71 Bias = -200 V

72. A16 S7 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S7 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S7 pixel alive test at REVERSE BIAS 72 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S7 pixel alive test with LIGHT at REVERSE BIAS

73. A16 S7 - Radioactive source test (Sr-90) Bias = -200V Mean = 29 ke- MP = 25 ke- Thickness = 300 μm 73 Source hit map

74. Sensor: SINTEF_2011_WA16_S8 Planar 300 μm thick Bump bonded to a ROC on 11-16-2012 - Flip-chipped then reflow Assembled on a new testboard on November 16 th 2012 IVs on wafer, before, and on testboard measured 74

75. A16 S8 - Leakage current 75

76. A16 S8 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 13 dead bumps) 76 Bias = -200 V

77. A16 S8 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA16_S8 pixel alive test at FORWARD BIAS  SINTEF_2011_WA16_S8 pixel alive test at REVERSE BIAS 77 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA16_S8 pixel alive test with LIGHT at REVERSE BIAS

78. A16 S8 - Radioactive source test (Sr-90) Bias = -200V Mean = 25.6 ke- MP = 21.3 ke- Thickness = 300 μm 78 Source hit map

79. Sensor: SINTEF_2011_WA18_S5 Planar 300 μm thick Bump bonded to a ROC on 11-17-2012 - Flip-chipped then reflow Assembled on a new testboard on November 17 th 2012 IVs on wafer, before, and on testboard measured 79

80. A18 S5 - Leakage current 80

81. A18 S5 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 493 dead bumps) Not repeatable and degrades at higher biases 81 Bias = -200 V

82. A18 S5 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA18_S5 pixel alive test at FORWARD BIAS  SINTEF_2011_WA18_S5 pixel alive test at REVERSE BIAS 82 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA18_S5 pixel alive test with LIGHT at REVERSE BIAS

83. A18 S5 - Radioactive source test (Sr-90) Bias = -200V Mean = 27.6 ke- MP = 22.5 ke- Thickness = 300 μm 83 Source hit map

84. Sensor: SINTEF_2011_WA18_S6 Planar 300 μm thick Bump bonded to a ROC on 11-17-2012 - Flip-chipped then reflow Assembled on a new testboard on November 17 th 2012 IVs on wafer, before, and on testboard measured 84

85. A18 S6 - Leakage current 85

86. A18 S6 - Full calibration summary ROC pixel alive test  Bump-bonding test  (found 1 dead bumps) 86 Bias = -200 V

87. A18 S6 - Testing bum-bond with forward bias + light test  SINTEF_2011_WA18_S6 pixel alive test at FORWARD BIAS  SINTEF_2011_WA18_S6 pixel alive test at REVERSE BIAS 87 REVERSE BIAS = -200 V FORWARD BIAS = +10 V  SINTEF_2011_WA18_S6 pixel alive test with LIGHT at REVERSE BIAS

88. A18 S6 - Radioactive source test (Sr-90) Bias = -200V Mean = 30 ke- MP = 25 ke- Thickness = 300 μm 88 Source hit map

89. November 27, 2012 89

90. Noise study SCurve tests performed at – 22 °C – Vbias [-V] = 25, 50, 75, 100, 125, 150, 175, 200, 250, and 300 – Almost no noise date at Vbias = -25 V 90

91. SINTEF 2011 WA15 91

92. SINTEF 2011 WA16 92

93. SINTEF 2011 WA17 93