EKV3 design kit for 110nm RF-CMOS

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Presentation transcript:

EKV3 design kit for 110nm RF-CMOS Sadayuki Yoshitomi Toshiba Corporation Semiconductor Company Demonstration of EKV3.0’s modeling capability for RF-CMOS circuit design. Adaptation case of TOSHIBA’s 110nm RF-CMOS technology Modeling accuracy DC input-output characteristics Gate capacitance at 1MHz S-parameter at various bias points Scalability of S-parameters Load-Pull measurements EKV3.0 implementation ADS design kit example 22th Sept. 2006 MOS-AK Meeting TOSHIBA Corp. Semiconductor Company

Platform : Agilent’s ADS TOSHIBA Corp. Semiconductor Company EKV3.0 design Kit Measured Simulated DC and CV fT-VGS Platform : Agilent’s ADS N-MOSFET Gate length=0.11um, Finger length=5um Numbers of fingers=10 LoadPull S-Parameter 22th Sept. 2006 MOS-AK Meeting TOSHIBA Corp. Semiconductor Company

TOSHIBA Corp. Semiconductor Company Summary EKV3.0 design kit has been demonstrated 61 out of 120 model parameter has bee changed from the default values. EKV3.0 gives good prediction of MOSFETs’ DC and C-V and scaleability (VTH vs. L and W) Multi biased S-parameter and scalability. Operation under gain compression. Currently Agilent’s ADS is available. Implementation into other tools are being planned. 22th Sept. 2006 MOS-AK Meeting TOSHIBA Corp. Semiconductor Company