2. Particle motion in the inversion layer

4. NMOS -- p type semiconductor – V GS > V T & saturating V DS

5. NMOS -- p type semiconductor -- gate voltage V GS > V T – experimental measurement of parameters (linear) G V

6. NMOS -- p type semiconductor – V GS > V T & saturating V DS

7. NMOS -- p type semiconductor -- gate voltage V GS > V T – experimental measurement of parameters (saturation) G V

8. Transient analysis

12. NMOS -- p type semiconductor – normal biasing

14. Transconductance – non-saturation

15. Transconductance –saturation

16. Electrical circuit model G in

17. Electrical circuit modeling a MOSFET

18. Electrical circuit modeling a MOSFET low-frequency

21. Electrical circuit modeling a MOSFET high frequency

23. Electrical circuit modeling a MOSFET gain

25. Frequency limitations G V --

26. Ames

29. Simple three-dimensional unit cell