1. University of Toronto (TH2B - 01) 65-GHz Doppler Sensor with On-Chip Antenna in 0.18µm SiGe BiCMOS Terry Yao, Lamia Tchoketch-Kebir, Olga Yuryevich, Michael Gordon and Sorin P. Voinigescu

2. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS2 Outline Motivation System Overview and Design Experimental Results Conclusions Acknowledgments

3. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS3 Motivation mm-wave integration in silicon accelerated by:  Significantly smaller form factors of on-chip passives (inductors, transformers, antennae)  Advances in SiGe BiCMOS Target applications:  mm-wave sensors for medical and security applications  Short range automotive radar

4. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS4 State-of-the-Art in mm-Wave Integration SiGe favoured over CMOS due to higher breakdown voltage  higher PA power, lower phase noise VCOs Critical challenge  tuning BW, phase noise and output power of VCO No Tx/Rx IC with antenna and fundamental VCO System Antenna on chip? Integrated Fund. VCO? Freq. (GHz) Process (f T /f MAX )Reference Tx YN77SiGe (200/250GHz)A. Natarajan (ISSCC, 2006) YN60SiGe (120/130GHz)C.H. Wang (ISSCC, 2006) NN60SiGe (200/250GHz)B. Floyd (ISSCC, 2006) Rx YN77SiGe (200/250GHz)A. Babakhani (ISSCC, 2006) NY65SiGe (150/160GHz)M. Gordon (SiRF, 2006) NN60SiGe (200/250GHz)B. Floyd (ISSCC, 2006) NN600.13µm CMOSB. Razavi (ISSCC, 2005)

5. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS5 Integrated Fundamental Frequency VCO Challenges:  Accurate f osc  modeling of passives and parasitics  Low phase noise  high-Q tank, large BV CEO, large V osc  High P OUT  large BV CEO, I BIAS, accurate matching  Wide tuning range  high capacitance-ratio varactors Benefits:  Less EMI, no filtering required  Area and power savings (multiplier structure, off-chip transition eliminated, etc.)  Higher integration level = lower overall cost Note: Static frequency dividers equally important as VCO; so far only SiGe ones demonstrated >60GHz with low power (T. Dickson, SiRF ’06; E. Laskin, BCTM ’06)

6. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS6 Outline Motivation System Overview and Design Experimental Results Conclusions Acknowledgments

7. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS7 System Highlights and Overview Extensive use of small footprint inductors as matching elements  area savings HBT cascodes for higher gain, isolation

8. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS8 System Design – Receive Path 2-stage single-ended cascode LNA with vertically stacked transformer output Down-convert mixer noise- and power-matched to 200Ω differential Z out of LNA Bipolar IF amplifier for reduced 1/f noise

9. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS9 System Design – Transmit Path Differential Colpitts 61- 67GHz VCO (shared with receive path) 2-Stage emitter follower buffers 65GHz output buffer driving 50Ω loads per side

10. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS10 Building Blocks: Mixer Key design goals:  59-65GHz operation  Low noise at low IF  High conversion gain HBT for reduced 1/f noise Simultaneously noise- and power-matched to 200Ω differential LNA output Simulated: G ~ 9.2dB; IIP3 ~ 4.2dBm; NF ~ 13dB 13.2mW from 3.3V supply

11. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS11 mm-Wave Passives Reduced form factor of on-chip passives at mm-waves Inductors preferred for area efficiency and low-loss ASITIC with >90% accuracy; 2- π model Stacked transformer and power transfer measured up to 94GHz 65-GHz polyphase filter and measured phase response 1-65GHz 34 µm

12. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS12 Patch Antenna Design Patch Antenna Gain: -8.5dBi Patch has similar gain as dipole but better isolation on Si

13. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS13 Outline Motivation System Overview and Design Experimental Results Conclusions Acknowledgments

14. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS14 Fabrication Technology Jazz Semiconductor’s SBC18 SiGe BiCMOS process f T, f MAX >150 GHz 6-metal backend

15. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS15 Fabricated Structures 1.7mm LNA VCO Output Buffer IF Amp Mixer 1mm 1.7mm x 1.3mm Patch Antenna 1.3mm 1mm LNA VCO Mixer IF Amp Output Buffer 2.5mm x 2.5mm1mm x 1mm

16. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS16 2-Stage Cascode LNA Measurements Breakout measurements:  14dB S 21 @ 65GHz  Input P 1dB = -12.8dBm Simulated NF = 10.5dB 40mW from 3.3V supply Total Area: 370 x 480µm 2

17. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS17 on-wafer probing of sensor without on-chip antenna measurement using horn antenna/suspended probe and adjustable metal reflector Experimental Results

18. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS18 Experimental Results SE meas. with external RF input of -48dBm @ 64GHz SE down-conversion gain of 16.5dB SE transmit output spectrum Diff. output power +4.3dBm after de- embedding set-up loss

19. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS19 6 elevations of horn antenna over Rx patch antenna (~ 15mm - 100mm) Propagation loss contributes to loss in conversion gain Experimental Results 16.5dB w/o antenna -24.5dB suspended probe over antenna -26dB horn antenna over patch antenna

20. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS20 Experimental Results Gain in good agreement with spectral measurement Measured IIP3 = -20dBm

21. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS21 Performance Summary Rx conversion gain (on-wafer probed) 16.5dB (S) Rx conversion gain (horn antenna)-26dB (S) Rx conversion gain (suspended probe) -24.5dB (S) Rx IIP3-20dBm Rx P 1dB, in -30dBm Rx noise figure (min.)12.5dB Tx output power (@ 65GHz)1.3dBm (4.3dBm D) LO tuning range61-67GHz Power consumption640mW Area1 x 1mm 2 (no patch antenna) 2.5 x 2.5mm 2 (with patch antenna) S: Single-endedD: Differential

22. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS22 Conclusions Single-chip 65-GHz Doppler sensor featuring:  61-67GHz integrated varactor-tuned fundamental frequency VCO  on-chip patch antenna  extensive use of lumped passives to minimize chip area Chip demonstrates:  high level of mm-wave integration achievable in today’s production silicon technology  feasibility of low-cost mm-wave systems for sensor and radio applications

23. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS23 Acknowledgments NSERC and Micronet for financial support Jazz Semiconductor for fabrication CMC for CAD tools K. Tang, K. Yau and S. Shahramian at U of T for simulation and measurement support

24. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS24 Thank You. Questions…

25. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS25 Backup Slides

26. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS26 System Design Considerations System acts as speed and motion sensor according to the Doppler effect: Range of detectable speeds dependent on Doppler freq. shift  Upper bound set by IF amplifier BW  Lower bound set by VCO phase noise

27. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS27 Building Blocks: On-Chip VCO Integrated 61-67GHz VCO Frequency scaled from earlier 60-GHz design by C. Lee (CSICS, ’04) with phase noise of -104dBc/Hz @ 1MHz carrier offset Differential Colpitts configuration with accumulation mode nMOS varactor (C2) and inductive emitter degeneration (L E ) for wide tuning range, low phase noise

28. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS28 System Design Considerations Why Patch Antenna? Low profile planar configuration  ease of integration Can be accurately designed and analyzed using transmission-line model Metal ground plane and substrate contacts help maximize isolation, reduce coupling into substrate

29. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS29 Simulated Antenna Gain Results

30. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS30 Lowest Horn Antenna Elevation Highest Horn Antenna Elevation Radar Measurement Setup