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22th Sept. 2006 MOS-AK Meeting TOSHIBA Corp. Semiconductor Company 1 EKV3 design kit for 110nm RF-CMOS Demonstration of EKV3.0’s modeling capability for.

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Presentation on theme: "22th Sept. 2006 MOS-AK Meeting TOSHIBA Corp. Semiconductor Company 1 EKV3 design kit for 110nm RF-CMOS Demonstration of EKV3.0’s modeling capability for."— Presentation transcript:

1 22th Sept MOS-AK Meeting TOSHIBA Corp. Semiconductor Company 1 EKV3 design kit for 110nm RF-CMOS Demonstration of EKV3.0’s modeling capability for RF-CMOS circuit design. Demonstration of EKV3.0’s modeling capability for RF-CMOS circuit design. Adaptation case of TOSHIBA’s 110nm RF-CMOS technology  Modeling accuracy  DC input-output characteristics  Gate capacitance at 1MHz  S-parameter at various bias points  Scalability of S-parameters  Load-Pull measurements EKV3.0 implementation  ADS design kit example Sadayuki Yoshitomi Toshiba Corporation Semiconductor Company

2 22th Sept MOS-AK Meeting TOSHIBA Corp. Semiconductor Company 2 EKV3.0 design Kit Platform : Agilent’s ADS DC and CV LoadPull fT-VGS S-Parameter Measured Simulated N-MOSFET Gate length=0.11um, Finger length=5um Numbers of fingers=10

3 22th Sept MOS-AK Meeting TOSHIBA Corp. Semiconductor Company 3 SummarySummary EKV3.0 design kit has been demonstrated EKV3.0 design kit has been demonstrated 61 out of 120 model parameter has bee changed from the default values. EKV3.0 gives good prediction of MOSFETs’  DC and C-V and scaleability (VTH vs. L and W)  Multi biased S-parameter and scalability.  Operation under gain compression. Currently Agilent’s ADS is available. Implementation into other tools are being planned.


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