1. EKV3 design kit for 110nm RF-CMOS
Sadayuki Yoshitomi
Toshiba Corporation Semiconductor Company
Demonstration of EKV3.0’s modeling capability for RF-CMOS circuit design.
Adaptation case of TOSHIBA’s 110nm RF-CMOS technology
Modeling accuracy
DC input-output characteristics
Gate capacitance at 1MHz
S-parameter at various bias points
Scalability of S-parameters
Load-Pull measurements
EKV3.0 implementation
ADS design kit example
22th Sept MOS-AK Meeting
TOSHIBA Corp. Semiconductor Company

2. Platform : Agilent’s ADS TOSHIBA Corp. Semiconductor Company
EKV3.0 design Kit
Measured
Simulated
DC and CV
fT-VGS
Platform : Agilent’s ADS
N-MOSFET
Gate length=0.11um, Finger length=5um
Numbers of fingers=10
LoadPull
S-Parameter
22th Sept MOS-AK Meeting
TOSHIBA Corp. Semiconductor Company

3. TOSHIBA Corp. Semiconductor Company
Summary
EKV3.0 design kit has been demonstrated
61 out of 120 model parameter has bee changed from the default values.
EKV3.0 gives good prediction of MOSFETs’
DC and C-V and scaleability (VTH vs. L and W)
Multi biased S-parameter and scalability.
Operation under gain compression.
Currently Agilent’s ADS is available. Implementation into other tools are being planned.
22th Sept MOS-AK Meeting
TOSHIBA Corp. Semiconductor Company