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Advanced IC Packaging A Technology Overview…

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Presentation on theme: "Advanced IC Packaging A Technology Overview…"— Presentation transcript:

1 Advanced IC Packaging A Technology Overview…
July J. Park C. Moll

2 A Chip is Useless w/out a Package
Delivers power to the Chip Transfers information into and out of the Chip to the PCB Draws heat away from the Chip Protects the Chip from outside elements

3 IC Package Types (Lead Frame)
PQFP- Plastic Quad Flat Pack Up to 304 pins (500 micron pitch) Inexpensive (~ a penny per pin) Hermetic (Good for Harsh Environments) Smaller ASICs and lower performance, lower pin count Microprocessors. TSOP- Thin Small Outline Package (TQFP- Thin QFP) Very Low Profile Common for Memory Can Support Stacked Die Can Support Flip chip PLCC, SOIC, MLF, DIP, SIP, etc- Smaller Pin Count (4-84 pins) ALL Use mechanical based tools for design (AutoCAD) NOT a Good Fit For APD 75% of IC’s are in Lead Frame Packages

4 IC Package Types Continued…
BGA- Ball Grid Array PBGA (Plastic BGA) Routable Laminate Substrate (Many Layers) High Pin Count (Over 2000 pins) ASICs, DSPs, PC Chipsets Wirebond, TAB or Flip-Chip (Build-Up) attach Build-Up Technology Requires Special Via Structures Can support Via in Balls (uncommon)

5 BGA Continued… BGA- Ball Grid Array CBGA (Ceramic BGA)
LTCC- Low Temp Co-Fired Ceramic MLC- Multi Layer Ceramic Good Thermal and Electrical properties Usually Flip-Chip and SiP (MCM) Supports Smaller Feature Sizes (Interconnect Density) Supports Via in Ball Support for Die Cavities More Expensive, Reliability Questions

6 BGA Continued… BGA- Ball Grid Array TBGA (Tape BGA)
1 Or 2 Layer Tape (Usually 1) CSP- Chip Scale Packaging Very Low Profile Good Thermal and Electrical Performance (Short Vias) Smaller Pin Count Cavity Down

7 Die (Electrical) Attachment
Wire Bond Tape (TAB) Flip-Chip (C4) Direct Connect (Bumpless Build-up) Chip On Board (COB) FCOB (Flip-COB)

8 Wirebond Attachment Used in Lead Frame, PGA and BGA packaging
Over 80% of Packages are Wirebonded Epoxy Glue to Attach Chip Typically Gold Wire Also Copper, Aluminum Wire length- typ. 1-5 mm Wire diam.- typ µm Inexpensive, Reliable

9 TAB (Tape Automated Bonding)
Interconnect Patterned On Tape Stronger Lead Bonding Strength Supports Smaller On-chip Pin Size and Pitch Supports up to 850 Pins Better Electrical Performance than Wirebonds Area TAB for Flip-Chip

10 Flip-Chip (C4) Attachment
What is Flip-Chip- A method to electrically connect the die to the package carrier The bond wire is replaced with a conductive “bump” placed directly on the die surface Under-fill epoxy is used to secure the attachment and absorb stress The chip is then “flipped” face down onto the package carrier using a re-flow process Bump sizes range from microns in diameter Also known as C4 (Controlled Collapsible Chip Connection) Invented by IBM

11 Flip-Chip Continued Flip-Chip is NOT:
A Specific Substrate Material like LTCC or FR4 A Specific Package like SOIC A Specific Package Type like QFP, BGA or PGA

12 Advantages of Flip-Chip
Reduced Signal Inductance Shorter Interconnect Lengths Use Power More Efficiently Power Directly at the Core Higher Interconnect Density More Routable Area Smaller Package Size Chip Scale Packaging (CSP) I/O Not Controlling Core Size Area Array Placement Possible Die Shrink

13 More about Flip-Chip Two methods of “Bumping” the Chip:
RDL- Re-Distribution Layer Direct Bumping (UBM)

14 More Flip-Chip… Stud Bumping High Pin Count ASICs and Microprocessors
Direct Gold Bump Placed on Die Bond Pad Supports Tighter Pin Pitch High Pin Count ASICs and Microprocessors Typical Package is CBGA or TBGA (> 600 pins) Tape Carrier Package Used for < 600 pins

15 Flip-Chip…The Build-Up Process
Based on High Density, Micro Via Organic Substrate Also Referred To As Sequential Build-up Requires Flip-Chip Escape Route Patterns Typical Package Assembly Based on a 2layer Core and Build-Up From Each Side of Core i.e. 3/2/3 process equals 3 build-up layers from each core side Build-up is Less Expensive Than LTCC. However, LTCC Exhibits Better Die Shrink Support with Same Build-Up Arrangement (a 3/2/3 process) Die Cost (size) Drives Use of Flip-Chip, Build-Up Process 2layer core

16 Flip-Chip…The Build-Up Process
Layer to Layer Connections Typically Use: Micro-Vias of 100um or Less Special Patterns (Stagger, Staircase, etc.) Core Vias Larger Than Micro Vias Lines and Spaces < 35um Use of Mesh Planes for Fabrication Yields IBM Unique uvia Patterns Core via vs. uvia

17 CSP- Chip Scale Packaging
Definition: A Package is Considered CSP when it is Less than 20% Larger than the Die. Usually Flip-Chip Attachment Flex Tape and Wirebond also possible Common for Wireless Handsets and Handheld Electronics . Stacked die support (S-CSP- Stacked CSP) Laminate and Ceramic Substrates

18 3D Packaging- Stacked Die
Definition: Packaging Technology with 2 or More DIE Stacked in a Single Package or Multiple Packages Stacked Together Supports Wirebond Die Attach Flip chip Die Attach Hybrid- Combination of Flip-Chip and Wirebond Attach Packaging Applications CSP (most common) PBGA, BGA, TSOP, TQFP etc. Benefits of 3D Packaging Smaller, Thinner and Lighter Packages Reduced Packaging Costs and Components Reduced System Level Cost for System in Package (SiP) vs System on Chip (SoC) approach System Level Size Reduction Due to Smaller Footprints and Decrease Component Count (SiP) Common for Wireless Handsets, Handheld Electronics and Memory Intensive Requirements.

19 Hybrid (Thin & Thick Film)
Definition: A Single Substrate with Monolithic and Film Elements Passive Circuit Elements Deposited on an Insulating Substrate Usually Ceramic Substrates Alumina, Beryillia, Aluminum Nitride Conductors Usually Gold, Silver, Palladium and Platinum Unique Design Requirements: Paste/Ink Resistors (Laser Trimmed to .1%) Dielectric Crossovers Wire Bonding Packaged in Sips and Dips (low pin count) Medical, Aerospace, Automotive

20 SiP- System In Package (MCM)
Wireless (RF) Market is the Key Driver Motorola, Philips, Conexant, etc LTCC is the Substrate of Choice CBGA Package SiP is NOT SOC (System On Chip)

21 Advantages of SiP over SOC
RF IC’s Typically Take 3-5 Manufacturing Passes Mask Sets Cost Up To One Million Dollars Each (130nm) Total Cost of Up To 5 Million Dollars 6 Month Impact to Schedule SiP on LTCC Total Cost Less Than 500K for 3-5 Manufacturing Passes 6 Week Impact to Schedule Mixed Technology Support CMOS, GaAs, SiGe all on One Substrate Flexible Design Partitioning Bluetooth Standard Platform

22 Current RF Module Process
RFDE Library (models) ADS Sim ADE Composer Schematic Capture Spectre (RF) Simulation Binary ADS Schematic Capture Virtuoso IC Layout Assura Extraction/LVS IFF ADS RF Layout Momentum 2D Planer Solver LEF/DEF Parasitics/S Parameters/Spice IFF Gerber Union Design Entry HDL Schematic Capture Pst Files APD 610 SiP/Module Layout This is a commonly used flow for RF Module (SiP) Design. The schematic for the RF IC is Captured in Composer and Simulated in ADE (formally know as Analog Artist) with the Spectre and Spectre RF simulators. Through the Agilent partnership additional models and simulation capabilities are integrated into Composer and the DFII environment. This is bundled in a product available directly from Agilent called RFDE (Radio Freq Design Env). The Composer schematic directly feeds into Virtuoso for IC layout. Assura RCX is integrated into the flow to extract parasitics from the IC layout and for LVS. This helps to keep the logical and physical data in-sync with each other. In June of 2003 the Agilent partnership will integrate Momentum (2D Planer Field Solver) into Virtuoso for advanced parasitic extraction from the IC layout. The Top Level pin information from Virtuoso will be used to generate the IC footprint for the Module. This is done through the LEF/DEF interface in APD. The Module level schematic can be entered in Agilent ADS and/or in Concept HDL. IFF is the file format that can be used to transfer the ADS schematic into Concept. Small Sections of the Physical design can be done in ADS layout and passed into APD through the IFF interface. The complete Module is assembled in APD and Manufacturing outputs can be created. APE can be used for Extraction and Simulation of the Module level interconnect. Through Ansoft Links, HFSS can be linked to the flow for S Parameter extraction, etc. APSI 620 Module Level Analysis Cadence Ansoft Links Agilent Ansoft HFSS 3D Extraction Ansoft

23 RF SiP Requirements Schematic Driven Buried Discrete Components
Mostly Inductors (Spiral) and Capacitors Parameterized Elements Component Level LVS

24 Current Trends 3D Packaging- Stacked Die Build-Up Substrates Flip-Chip
DCA- Direct Chip Attach (Bump-Less) SiP LTCC, Bluetooth Standard “Green” Manufacturing Removing Lead (Pb) New Materials (tin, silver, copper) for Die Attach, plating, solder balls Standard Packages Custom Packages Too Expensive

25 Who’s Who in IC Packaging
In 2004 STATS merged with ChipPAC to become #3


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