1. Various Power Gating techniques to reduce power dissipation in various macros of microprocessors By Sai Raghunath T

2. Goal: Reduction of standby power dissipation from execution unit and memory unit using power gating techniques Specifications and tools used: Two 32-bit ALUs are implemented using Transmission gates by static design logic and alternating static and dynamic logic SRAM memory with 16Rx8W is implemented. Each word is 16 bits in length. TSMC 0.24um technology files are used in the design of ALUs and SRAM. Design is carried out with Cadence EDA tool.

3. Proposed work Implementation of 32 bit ALU and use various power gating techniques (listed below) to reduce the standby power leakage. Input vector control with and without body biasing. MTCMOS with selective MT technique SRAM- 16rows x (16*8) columns Lone nMOS data retention circuitry Lone pMOS data retention circuitry

4. Work carried out Implementation of a 32-bit ALU using Transmission gates and Carry bypass adder Implementation of a 32-bit ALU using Transmission gates and Han Carlson adder (both with and without input vector control body biasing) Implementation of SRAM bank of 16R X 8W in 250nm technology with data retention circuitry and power gating. Each word is 16 bits in length.

5. Block diagram of 32-bit ALU 9x1 Mux 2x1 Mux Shifter Adder 031 32x9 i/ps 310 0 Cout 031 0

6. Power gating circuitry used

7. Basic SRAM cell pmos-pu nmos-pd nmos-pg nmos BL BLB WL Wn of nmos-pg :720nm Wn of nmos-pd :1.08um Wp of pmos-pu: 360nm

8. Deviations from the proposed work MTCMOS with selective MT technique is not implemented as students are not permitted to change the threshold voltage of the transistors of a model file in ASU. After a brief research on data retention circuitry and power gating for SRAMs, nmos power gating circuitry and pmos data retention circuitry is implemented.

9. Data retention and power gatin circuitry used SRAM bank

10. Results 32 bit ALU with Transmission gates and Carry bypass adder: Standby leakage power without power gating=13.25uW Standby leakage power with power gating=72.25pW 32 bit ALU with Transmission gates and Han Carlson adder: Standby leakage power without power gating=10.78uW Standby leakage power with power gating= 28.2pW SRAM bank (16Rx8W) Standby leakage power without nmos power gating circuitry and pmos data retention circuitry=30.7pW Standby leakage power with nmos power gating circuitry and pmos data retention circuitry = 13.51pW

11. References [1]. Zhigang Hu; Buyuktosunoglu, A.; Srinivasan, V.; Zyuban, V.; Jacobson, H.; Bose, P, Microarchitectural Techniques for Power Gating of Execution Units in ISPLED, 2004 Page(s):32 - 37 [2]. Hailin Jiang; Marek-Sadowska, M.; Nassif, S.R,Benefits and costs of power-gating technique in ICCD,2005 Page(s):559 – 566 [3]. Chung-Hsien Hua and Wei Hwang, "A Power Gating Structure with Concurrent Data Retention and Intermediate Modes in 100nm CMOS Technology" in 15th VLSI Design/CAD Symposium, 2004 [4]. Suhwan Kim; Kosonocky, S.V.; Knebel, D.R.; Stawiasz, K.,Experimental measurement of a novel power gating structure with intermediate power saving mode in ISPLED, 2004 Page(s):20 - 25