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2002/06/11 Rational You p.1 Non-Classical CMOS Dr. Rational You IEK/ITRI 2002/07/11 Source:

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Presentation on theme: "2002/06/11 Rational You p.1 Non-Classical CMOS Dr. Rational You IEK/ITRI 2002/07/11 Source:"— Presentation transcript:

1 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.1 Non-Classical CMOS Dr. Rational You IEK/ITRI 2002/07/11 Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

2 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.2 Outline SOI CMOS FET Double Gate MOSFET 3 Double Gate MOSFETs DG-MOSFET-Type 1 (Planar Device) DG-MOSFET-Type 2 (Vertical Device) Processes of DG-MOSFET-Type 2 (Vertical Device) Processes of FinFET 3D Structure of FinFET 3D Structure of Strain MOSFET Mobility of Strain MOSFET (Improve 70%) Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

3 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.3 SOI CMOS FET (a) Fully Depleted SOI (b) Partially Depleted SOI (PD SOI) (c) Double Gate/Back Gate CMOS Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

4 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.4 Double Gate MOSFET (a) Bulk MOSFET (b) Ultra-Thin Body MOSFET (c) Double Gate MOSFET Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

5 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.5 3 Double Gate MOSFETs Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

6 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.6 DG-MOSFET-Type 1 (Planar Device) Source:Wong, Chan, Taur (IEDM, 1997); http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

7 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.7 DG-MOSFET-Type 2 (Vertical Device) Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

8 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.8 Processes of DG-MOSFET-Type 2 (Vertical Device)-1 Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

9 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.9 Processes of DG-MOSFET-Type 2 (Vertical Device)-2 Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

10 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.10 Processes of FinFET (i) Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

11 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.11 Processes of FinFET (ii) Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

12 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.12 3D Structure of FinFET Source: Hisamoto et al., IEDM (1998); Huang et al., IEDM (1999); http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

13 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.13 3D Structure of Strain MOSFET Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

14 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.14 Mobility of Strain MOSFET (Improve 70%) Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

15 RationalYou@sinamail.comRationalYou@sinamail.com; 2002/06/11 Rational You p.15 Reference 1. International Technology Roadmap for Semiconductor, SIA,2001 2. G. Moore, IEDM, 11(1975) 3. H.-S. P. Wong, ESSDERC,412(2001) 4. Y. Taur, et al., Fundamental of Modern VLSI Devices, Cambridge(1998) 5. J. Hutchby, ITRS Presentation, 2001 6. H.-S. Wong et al., IEDM, 427(1997) 7. S-H Oh et al., IEDM,65 (2000) 8. D. Hisamoto et al., IEEE T-ED, 47, 2320 (2000) 9. X. Huang et al.,IEDM,67(1999) 10. K. Rim et al., Symp. VLSI Technology, 59 (2001) Source: http://www.materialsnet.com.tw (2002/05)http://www.materialsnet.com.tw

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