EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje.

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EE141 © Digital Integrated Circuits 2nd Devices 1 Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic July 30, 2002

EE141 © Digital Integrated Circuits 2nd Devices 2 Goal of this chapter  Present intuitive understanding of device operation  Introduction of basic device equations  Introduction of models for manual analysis  Introduction of models for SPICE simulation  Analysis of secondary and deep-submicron effects  Future trends

EE141 © Digital Integrated Circuits 2nd Devices 3 The Diode Mostly occurring as parasitic element in Digital ICs

EE141 © Digital Integrated Circuits 2nd Devices 4 Depletion Region

EE141 © Digital Integrated Circuits 2nd Devices 5 Diode Current

EE141 © Digital Integrated Circuits 2nd Devices 6 Forward Bias Typically avoided in Digital ICs

EE141 © Digital Integrated Circuits 2nd Devices 7 Reverse Bias The Dominant Operation Mode

EE141 © Digital Integrated Circuits 2nd Devices 8 Models for Manual Analysis

EE141 © Digital Integrated Circuits 2nd Devices 9 Junction Capacitance

EE141 © Digital Integrated Circuits 2nd Devices 10 What is a Transistor? A Switch! |V GS | An MOS Transistor

EE141 © Digital Integrated Circuits 2nd Devices 11 The MOS Transistor Polysilicon Aluminum

EE141 © Digital Integrated Circuits 2nd Devices 12 MOS Transistors - Types and Symbols D S G D S G G S DD S G NMOS Enhancement NMOS PMOS Depletion Enhancement B NMOS with Bulk Contact

EE141 © Digital Integrated Circuits 2nd Devices 13 Threshold Voltage: Concept

EE141 © Digital Integrated Circuits 2nd Devices 14 The Threshold Voltage

EE141 © Digital Integrated Circuits 2nd Devices 15 The Body Effect

EE141 © Digital Integrated Circuits 2nd Devices 16 Transistor in Linear

EE141 © Digital Integrated Circuits 2nd Devices 17 Transistor in Saturation Pinch-off

EE141 © Digital Integrated Circuits 2nd Devices 18 A model for manual analysis

EE141 © Digital Integrated Circuits 2nd Devices 19 Current-Voltage Relations A good ol’ transistor Quadratic Relationship x V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V ResistiveSaturation V DS = V GS - V T

EE141 © Digital Integrated Circuits 2nd Devices 20 Process Data

EE141 © Digital Integrated Circuits 2nd Devices 21 Current-Voltage Relations The Deep-Submicron Era Linear Relationship -4 V DS (V) x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Early Saturation

EE141 © Digital Integrated Circuits 2nd Devices 22 Velocity Saturation  (V/µm)  c = 1.5  n ( m / s )  sat = 10 5 Constant mobility (slope = µ) Constant velocity

EE141 © Digital Integrated Circuits 2nd Devices 23 Velocity Saturation (Computation)

EE141 © Digital Integrated Circuits 2nd Devices 24 Perspective I D Long-channel device Short-channel device V DS V DSAT V GS - V T V GS = V DD

EE141 © Digital Integrated Circuits 2nd Devices 25 I D versus V DS -4 V DS (V) x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V x V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V ResistiveSaturation V DS = V GS - V T Long ChannelShort Channel

EE141 © Digital Integrated Circuits 2nd Devices 26 A unified model for manual analysis S D G B

EE141 © Digital Integrated Circuits 2nd Devices 27 Transistor Model for Manual Analysis

EE141 © Digital Integrated Circuits 2nd Devices 28 The Sub-Micron MOS Transistor  Threshold Variations  Subthreshold Conduction  Parasitic Resistances

EE141 © Digital Integrated Circuits 2nd Devices 29 Threshold Variations V T L Long-channel threshold LowV DS threshold Threshold as a function of the length (for lowV DS ) Drain-induced barrier lowering (for lowL) V DS V T

EE141 © Digital Integrated Circuits 2nd Devices 30 The MOS Transistor Polysilicon Aluminum

EE141 © Digital Integrated Circuits 2nd Devices 31 MOSFET Capacitance Model

EE141 © Digital Integrated Circuits 2nd Devices 32 MOSFET Gate Capacitance

EE141 © Digital Integrated Circuits 2nd Devices 33 MOSFET DB and SB Capacitance

EE141 © Digital Integrated Circuits 2nd Devices 34 Junction Capacitance

EE141 © Digital Integrated Circuits 2nd Devices 35 More Process Data

EE141 © Digital Integrated Circuits 2nd Devices 36 Problems (2)

EE141 © Digital Integrated Circuits 2nd Devices 37 Problems (3)

EE141 © Digital Integrated Circuits 2nd Devices 38 Problems (8)

EE141 © Digital Integrated Circuits 2nd Devices 39 Problems (17)

EE141 © Digital Integrated Circuits 2nd Devices 40 Latch-up