ITRS Summer Conference 2007 Moscone Center San Francisco, CA 1 Work in Progress: Not for Distribution 2007 ITRS Emerging Research Materials [ERM] July 18, 2007 Michael Garner – Intel Daniel Herr – SRC

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 2 Work in Progress: Not for Distribution ERM Participants Hiro AkinagaAIST Bob Allen IBM Nobuo Aoi Matsushita Koyu Asai Renesas Yuji Awano Fujitsu Daniel-Camille Bensahel STM Chuck Black BNL Ageeth Bol IBM Bill Bottoms Nanonexus George BourianoffIntel Alex BratkovskiHP Marie Burnham Freescale William Butler U. of Alabama John Carruthers Port. State Univ. Zhihong ChenIBM U-In Chung Samsung Rinn CleavelinTI Reed Content AMD Hongjie Dai Stanford Univ. Jean DijonLETI Joe DeSimone UNC Terry Francis T A Francis Assoc. Chuck FraustSIA Satoshi FujimuraTOK Michael Garner Intel Emmanuel Giannelis Cornell Univ. Michael GoldsteinIntel Joe GordonIBM Jim HannonIBM Craig Hawker UCSB Robert Helms UTD Rudi Hendel AMAT Susan Holl Spansion Dan HerrSRC Greg HigashiIntel Harold HosackSRC Jim HutchbySRC Kohei ItoKeio Univ. James JewettIntel Antoine Kahn Princeton Univ. Sergie Kalinin ORNL Ted KaminsHP Masashi Kawasaki Tohoku Univ. Roger Lake U.C. Riverside Steve KnightNIST Gertjan Koster Stanford Univ. Louis Lome IDA Cons. Francois MartinLETI Fumihiro Matsukura Tohoku U Allan MacDonald Texas A&M Andrew Millis Columbia Univ. Bob MillerIBM Chris MurrayIBM Paul Nealey U. Wisc. We-Xin NiNNDL Fumiyuki NiheyNEC Dmitri Nikonov Intel Yoshio Nishi Stanford Chris Ober Cornell Univ. Brian Raley Freescale Ramamoorthy Ramesh U.C. Berkeley Nachiket RaravikarIntel Mark Reed Yale Univ. Curt RichterNIST Dave Roberts Air Products Francis RossIBM Tadashi Sakai Toshiba Sadasivan ShankarIntel Lars Samuelson Lund University Mitusru SatoTOK John Henry ScottNIST Farhang ShadmanU Az. Sadasivan ShankarIntel Atsushi Shiota JSRMicro Reyes Sierra U Az. Kaushal SinghAMAT Susanne StemmerUCSB Naoyuki SugiyamaToray Shinichi Tagaki U of Tokyo Koki TamuraTOK Yasuhide TomiokaAIST Evgeny Tsymbal U. of Nebraska Emanuel TutucIBM Ken UchidaToshiba John UngurisNIST Bert Vermiere Env. Metrol. Corp. Yasuo Wada Toyo U Vijay WakharkarIntel Kang WangUCLA Rainer Waser Aacken Univ. C.P. Wong GA Tech. Univ. H.S. Philip Wong Stanford University Walter Worth ISEMATECH Hiroshi YamaguchiNTT Toru Yamaguchi NTT In Kyeong Yoo Samsung Victor Zhirnov SRC

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 3 Work in Progress: Not for Distribution Macromolecular Scale Devices are on the ITRS Horizon ITRS Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp (2001). Macromolecular Scale Components: Low dimensional nanomaterials Macromolecules Directed self-assembly Complex metal oxides Hetero-structures and interfaces Spin materials Benign and sustainable nanomaterials Macromolecular Scale Devices

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 4 Work in Progress: Not for Distribution Emerging Research Materials [ERM] Develop a cross-cutting ERM Chapter in 2007 Goal: Identify critical ERM technical and timing requirements for ITWG identified applications Consolidate materials research requirements for: University and government researchers Chemists, materials scientists, etc. Industry Researchers Semiconductor Chemical, material, and equipment suppliers Align ERM requirements with ITWG Needs Host workshops to assess ERM properties, potential applications, and research directions

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 5 Work in Progress: Not for Distribution Low Dimensional Materials Table (1/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 6 Work in Progress: Not for Distribution Low Dimensional Materials Table (2/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 7 Work in Progress: Not for Distribution Low Dimensional Materials Table (3/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 8 Work in Progress: Not for Distribution Low Dimensional Materials Table (4/4)

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 9 Work in Progress: Not for Distribution Emerging Research Materials [ERM] Matrix Mat. TWG Low Dimensional Materials Macro- molecules Spin Materials Complex Metal Oxides Hetero- structures & Interfaces Directed Self- assembly ESHMetrol. & Modelg ESH ERD FEP INT LIT MET M&S PIDS PKG Detailed TWG Requirements or alignment General TWG Interest or alignment No TWG Interest to Date

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 10 Work in Progress: Not for Distribution Emerging Material Needs: ESH Metrology needed to detect the presence of nanoparticles Research needed on potential bio- interactions of nanoparticles Need Hierarchical Risk/Hazard assessment protocol Research, Development, Commercialization Leverage Existing Research and Standards Activities

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 11 Work in Progress: Not for Distribution Emerging Material Needs: ERD Device State*Emerging Materials 1D Charge State (Low Dimensional Materials) Molecular State (Macromolecules) Spin State (Spin Materials and CMO**) Phase State (CMO**and Heterointerfaces) Memory –Fuse/anti-fuse, ionic, electronic effect, Ferroelectric FET, etc. All Devices have critical interface requirements *Representative Device Applications **CMO = Complex Metal Oxides

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 12 Work in Progress: Not for Distribution Deterministic Doping Selective Processes/Cleans Macromolecules Self-assembling materials and processes Emerging Material Needs: FEP Conductance variability reduced from 63% to 13% by controlling dopant numbers and roughly ordered arrays; Conductance due to implant positional variability within circular implant regions of the ordered array ~13%. SD Intel From Shinada et. Al., Enhancing Semiconductor Device Performance Using Ordered Dopant Arrays, Nature, 437 (20) (2005) [Waseda University] # of channel electrons D. Herr, with data from the 2005 ITRS ~2014

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 13 Work in Progress: Not for Distribution Emerging Material Needs: INT Vias Multi-wall CNT Higher density Contact Resistance Adhesion Interconnects Metallic Alignment Contact Resistance Dielectrics Novel ILD Materials Y. Awano, Fujitsu H. Dai, Stanford Univ. Quartz Crystal Step Alignment Ref ITRS, INT TWG, p. 22 ERMs Must Have Lower Resistivity Cu

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 14 Work in Progress: Not for Distribution Resist: Unique Properties Immersion: Low leaching, low surface energy, high n D EUV: Low outgassing, high speed and flare tolerant Imprint Materials Low viscosity Easy release Directed Self-Assembly Resolution, LER, density, defects, required shapes, throughput, registration and alignment Emerging Material Needs: LIT Molecular Glasses and PAGS, Ober, Cornell Macromolecular Architectures Polymer Design, R. Allen, IBM Directed di-block Copolymer Self Assembly P. Nealey, U. Wisc. Dendrimers, Frechet, UC-B Sublithographic resolution and registration Ross, MIT 25 nm L/S

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 15 Work in Progress: Not for Distribution Design Pattern Requirements for Directed Self-Assembly

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 16 Work in Progress: Not for Distribution Emerging Material Needs: MET Correlate nanostructure to macro-scale properties: bandgap, spin, optical, contact resistance, adhesion, mobility, dynamic properties, and nano-mechanical properties Methods that resolve and separate surface from bulk properties Nondestructive 3D imaging of embedded interface, nanostructure, and atomic scale matrix properties Atomic and nanoscale structure, including defects, of low Z materials In-Situ measurements that enable enhanced synthetic and process control Uniformity measurements of nanoscale properties over large areas Nanoparticle monitors for ES&H, which include size, dose, and composition.

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 17 Work in Progress: Not for Distribution Emerging Material Needs: M&S Modeling of material synthesis-structure- property correlations Interface properties and engineering Low dimensional material synthesis & properties Macromolecules and composites by design Spin material properties Strongly correlated electron material properties Long range and dynamic Integrated measurement and modeling tools De-convolve nm scale metrology signals, Include sample preparation and contamination Deconvolve probe - sample interactions Metrology and modeling must be able to characterize and predict performance and reliability

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 18 Work in Progress: Not for Distribution Emerging Material Needs: A&P Thermal Nanotubes High Density Power Delivery Capacitors Dielectrics: High K Self Assembly Interconnects: Nanotubes or Nanowires Package Thermo-Mechanical Substrate: Nanoparticles, Macromolecules Adhesives: Macromolecules, Nanoparticles Chip Interconnect: Nanoparticles

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 19 Work in Progress: Not for Distribution Difficult ERM Challenges 16nm Summary of Issues CMOS Compatibility Integration for device extensibility Material and process temperature compatibility Control of nanostructures and properties Ability to pattern sub 20nm structures in resist or other manufacturing related patterning materials Control of surfaces & interfaces Control of CNT properties, bandgap distribution, and metallic fraction Control of stoichiometry & vacancy composition in complex metal oxides Control and identification of nanoscale phase segregation in spin materials Control of growth and thin hetero-interface strain Data/models that enable quantitative structure-property correlations and robust material-by-design Control of interface properties, e.g. electromigration Controlled self assembly of nanostructures Placement of nanostructures, such as CNTs, nanowires, or quantum dots, in precise locations for devices, interconnects, and other electronically useful components Control of line width of self assembled patterning materials Control of registration and defects in self assembled materials Characterization of nanostructure-property correlations Correlation of the interface structure, electronic and spin properties of interfaces with low dimensional materials Characterization of low atomic weight structures and defects Characterization of spin concentration in materials Characterization of vacancy concentration and its effect on the properties of complex oxides 3D molecular and nano-material structure-property correlations Characterizing properties of embedded interfaces and matrixes. Characterizing the electrical contact of embedded molecules. Characterizing the roles of vacancy and hydrogen at the interface of complex oxides vs. properties Characterizing spin interface transport Characterizing the structure and interface states in complex oxides Fundamental thermodynamic stability & fluctuations of materials & structures Geometry, conformation, and interface roughness in molecular and self assembled structures Device structure related properties, such as defects and ferromagnetic spin Dopant location and device variability Assessing the ESH impact of emerging materials Challenges for Characterizing the impact of Nanomaterials Early, hierarchical assessment of potential ESH impact & issues

ITRS Summer Conference 2007 Moscone Center San Francisco, CA 20 Work in Progress: Not for Distribution Status of ERM Work: July 2007 Completed the initial round of ERM workshops and joint ITWG meetings Aligning the projected ERM research requirements with the initial set of ITWG identified potential applications Developing the ERM chapter framework, section text, and research requirements tables