1. ITRS Spring Conference 2009 Brussels, Belgium 1 Work in Progress: Not for Distribution 2009 ITRS Emerging Research Materials [ERM] REVISED 3/20 March 18-20, 2009 Michael Garner – Intel Daniel Herr – SRC

2. ITRS Spring Conference 2009 Brussels, Belgium 2 Work in Progress: Not for Distribution Emerging Research Materials 2009 Scope Emerging Device Materials –Logic CMOS Extension( III-V, Ge, Graphene, CNT, NW) –Beyond CMOS Logic (Spin, Molecular, Metal-Insulator Transition) –Memory Molecular Oxide (FE & Resistance Change) Lithography –Dual Exposure Resist, Non CAR, Pixillated resist, Novel Mechanisms –Directed Self Assembly: Chemical Pattern & Physical Patterning FEP (Deterministic Doping) Interconnects (CNT Vias & Interconnects, Cu NW, Ultrathin Cu Barriers, Low K ILD Needs) Assembly & Package –Chip attach: CNTs, Nanosolders, and Conductive Adhesives –Package Polymers (Nanocomposites & Novel Macromolecules) –Thermal Interface Materials (CNT, others) ESH (Earliest insertion opportunity & Prioritized) Metrology (New needs: Domain & domain wall characterization, Soft material characterization & DSA defect recognition) Modeling (Structure property correlations)

3. ITRS Spring Conference 2009 Brussels, Belgium 3 Work in Progress: Not for Distribution 7:30Gathering time 8:00 Introductions 8:10Review meeting objectives and agenda Hutchby 8:20 Review of Administrative AspectsHutchby  Deliverables, Timeline, Events, & Next Steps  Chapter Outline, Page Count & Allocation  Cross TWG Linkages & Meetings 8:30Review/Discuss Status of Major Tech Sections  Section outline  Table structure (Row headers, etc.)  Table Content (Current & projected tables)  Key materials issues 8:30 Memory Devices Zhirnov 10:00Break ITRS ERD WG Meeting – March 18, 2009 Agenda

4. ITRS Spring Conference 2009 Brussels, Belgium 4 Work in Progress: Not for Distribution 10:15 Logic Devices Bourianoff 11:45 MASTAR Readiness for III-V & Ge MOSFETsNg 12:00 Lunch 12:30 Emerging Research MaterialsGarner 1:30 ArchitecturesCavin 2:30 Discuss/Decide Difficult ChallengesHutchby 3:15 Discuss Evaluation & Guidance Sections  3:15 Critical AssessmentHutchby  3:45 Guiding PrinciplesHutchby 4:00Discuss Proposal for Highlighting Promising Hutchby Options for Emerging Memory Technologies 4:45 Review ERD/ERM Beyond CMOS IRC Pres.All 5:25Wrap up and Review Actions RequiredAll 5:30Adjourn ITRS ERD WG Meeting – March 18, 2009 Agenda

5. ITRS Spring Conference 2009 Brussels, Belgium 5 Work in Progress: Not for Distribution ERM Agenda March 19, 2009 TimeSubjectLocation 9:00 -10:00PlenaryPlenary RM 10:00-11:00Europe Nanotube UpdateERM Area 11:00-11:30Assembly & Package & Litho Messages ERM Area 11:30-12:30Assembly & Packaging TWG -ERM A&P Area 12:30-13:30Lunch 13:30-14:00Litho TWG MeetingLitho Area 14:00-14:45ESH Table, Modeling NeedsERM Area 14:45-15:30ESH TWG-ERMESH Area

6. ITRS Spring Conference 2009 Brussels, Belgium 6 Work in Progress: Not for Distribution ERM Agenda March 19, 2009 TimeSubjectLocation 15:30-16:30Modeling TWG-ERMModeling Area 16:30-17:00Interconnect Needs & Assessment ERM Area 17:00-17:45Nanotube DiscussionERM Area 17:45Adjourn 18:00ITRS Dinner

7. ITRS Spring Conference 2009 Brussels, Belgium 7 Work in Progress: Not for Distribution ERM Agenda March 20, 2009 TimeSubjectLocation 9:00-10:00Beyond CMOSPlenary RM 10:00-11:00Interconnect TWG-ERMInterconnect Area 11:00-11:45FEP TWG - ERMFEP Area 11:45-12:30PIDS TWG -ERMPIDS Area 12:30-14:00Lunch (Plenary Presentations Due) 14:00-14:45ERD/ERMERM Room 14:45-15:30ERM PreparationLitho Area

8. ITRS Spring Conference 2009 Brussels, Belgium 8 Work in Progress: Not for Distribution ERM Agenda March 20, 2009 TimeSubjectLocation 15:30-16:00ERM, ERD, FEP, PIDS Alignment TBD 16:00-16:30Metrology TWG-ERMMetrology Area 16:30-18:15Plenary Plenary RM 18:15Adjourn

9. ITRS Spring Conference 2009 Brussels, Belgium 9 Work in Progress: Not for Distribution 2009 ERM Workshops F-t-F: Novel Macromolecules: ~February 28, 2009, SF Bay Area: Aligned with SPIE Microlithography Symposium. F-t-F: ERM Complex & Strongly Correlated Electron Materials, Early March ‘09, Japan E-WS: Complex Metal Oxides January ~18, 2009 Modeling WS SF MRS Metrology WS Albany, May 2009

10. ITRS Spring Conference 2009 Brussels, Belgium 10 Work in Progress: Not for Distribution Emerging Research Materials 2009 Establish ERM Outline and Writing Assignments Refine Critical Assessment Process –CMOS Extension: Detailed Critical Assessment –Beyond CMOS: Trends on critical materials & properties –Update Key Challenges Tables Plan Workshops on ERM –All workshops should identify Metrology, Modeling and ESH support as appropriate Finalize new materials needs based on ITWG inputs –ERD, Lithography, FEP, Interconnects, Assembly & Packaging, PIDS –Establish Concrete targets –Functional Diversification

11. ITRS Spring Conference 2009 Brussels, Belgium 11 Work in Progress: Not for Distribution ERM Outline Scope Introduction Difficult Challenges Challenges for Multi-application ERM (Back-up?) Materials for Alternate Channel CMOS (PIDS & ERD) –Critical Assessment ERM for Beyond CMOS Logic (ERD) Materials for Memory Devices –Critical Assessment ERM for Lithography –Resist (pixilated, multi exposure resist, Mon CAR, novel) –Self Assembled Materials –Transition Table (Molecular glasses, evolutionary resist macromolecular design, etc.) ERM for FEP & PIDS –Deterministic Doping –Self Assembly for Selective Deposition & Etch ERM for Interconnects ERM for Assembly & Package ERM ESH Research Needs ERM Metrology Needs ERM Modeling Needs

12. ITRS Spring Conference 2009 Brussels, Belgium 12 Work in Progress: Not for Distribution X-cutting Challenges LDM –Control of placement & direction –Control of nanostructure, properties & macro properties Contact & Interface issues Self Assembled Materials –Control of placement, defects, and registration Complex metal oxides –Control of properties, interfaces, defects, and moisture degradation

13. ITRS Spring Conference 2009 Brussels, Belgium 13 Work in Progress: Not for Distribution Materials for Alternate Channel CMOS III-V & Ge (John Carruthers) Semiconductor Nanowires(Ted Kamins) Graphene (Daniel Bensahel) Carbon Nanotubes (Jean Dijon)

14. ITRS Spring Conference 2009 Brussels, Belgium 14 Work in Progress: Not for Distribution III-V Ge Alternate Channel Partition Proposal ERM Materials, Interfaces & Process Issues & Challenges Critical Assessment of Materials & Integration Capabilities ERD Integrated Device Performance Assessment & Challenges (For different structures surface, buried channel, etc.) Critical Assessment of Device Performance PIDS III-V & Ge Potential Solution SiGe P-FET with Si N-FET Collaborate with ERD on device Readiness FEP Potential Solution: SiGe P-FET with Si N-FET III-V & Ge Potential Solution Track III-V & Ge Issues

15. ITRS Spring Conference 2009 Brussels, Belgium 15 Work in Progress: Not for Distribution 15 Production Ramp-up Model and Technology Cycle Timing Volume (Parts/Month) 1K 10K 100K Months 0 -24 1M 10M 100M Alpha Tool 1224 -12 DevelopmentProduction Beta Tool Production Tool First Conf. Papers First Two Companies Reaching Production Volume (Wafers/Month) 2 20 200 2K 20K 200K Source: 2005 ITRS - Exec. Summary Fig 3 Fig 3 2008 - Unchanged

16. ITRS Spring Conference 2009 Brussels, Belgium 16 Work in Progress: Not for Distribution Next Steps Key Items to Resolve before March ITRS –ERM Assessment Criteria Establish Research Targets –Review ERD Criteria –PIDS Draft Potential Solution Statement –FEP Draft HVM Capability Requirements

17. ITRS Spring Conference 2009 Brussels, Belgium 17 Work in Progress: Not for Distribution ERM Device Materials Outline Emerging Logic Materials Alternate Channel Materials for Equivalent Scaling III-V Epi Materials Ge Epi Materials Graphite and Graphitic Materials Nanowires Carbon Nanotubes Critical Assessment Contact Materials (?) Beyond CMOS Logic Materials Spin Materials Ferromagnetic Semiconductors (III-V & Oxides) Magnetoelectric Materials (Alloys, Heterostructures, superlattices) Spin Injection Materials (Low barrier ferromagnetic metals, half metals, etc) Spin Tunnel Barriers (MgO, etc) Semiconductor & nanostructure Spin Transport properties (Si, Ge, Graphene, CNT, etc), Strongly Correlated Electron State Materials (Metal-Insulator) Molecular Devices (?) Emerging Memory Materials Molecular Devices (?) Complex Metal Oxides Critical Assessment (?)

18. ITRS Spring Conference 2009 Brussels, Belgium 18 Work in Progress: Not for Distribution Materials for Alternate Channel Logic Alternate Channel Materials for Equivalent Scaling III-V Epi Materials (John Carruthers) Ge Epi Materials (John Carruthers) Graphite and Graphitic Materials (Jeff Peterson & Daniel Bensahel) Nanowires (Ted Kamins) Carbon Nanotubes (Jean Dijon) Critical Assessment Novel S/D Contact Materials (?)

19. ITRS Spring Conference 2009 Brussels, Belgium 19 Work in Progress: Not for Distribution III-V & Ge Key Messages Gate Dielectric Growth techniques are being developed –Current Approaches (III-V): MBE Growth of III-V/Ga2O3/GdGaO Stack (Freescale) As Cap/ In situ As decap +ALD HfO2 (Stanford) NH4OH-ALD Al2O3 or HfO2 on III-V (Purdue) InAlAs Barrier (MIT) –Current Approaches (Ge): GeOxNy Nitridation (Stanford) Ozone Oxidized Ge + ALD High κ dielectric HfO2 (Stanford) LaGeOx-ZrO2(Ge) High K (Dual Logic) Controlling surface oxide formation is critical for control of interface states –Control of interface stochiometry, structure and defects is critical –GeOx stochiometry control affected by growth temperature

20. ITRS Spring Conference 2009 Brussels, Belgium 20 Work in Progress: Not for Distribution III-V & Ge Key Messages Ge dopant activation requires high temperature –Incompatible with III-V process temperatures S/D Contact Formation Current Approaches: –Ge P-MOS: Boron with many ohmic metal contact options N-MOS: Dopants have high diffusivity & metals schottky barriers –III-V W contact/InGaAs cap/InAlAs (MIT) Are barriers needed to keep dislocations out of the channel?

21. ITRS Spring Conference 2009 Brussels, Belgium 21 Work in Progress: Not for Distribution III-V Ge Heteroepitaxy Challenges Reduction of dislocation densities Control of stress in III-V & Ge integrated on Si –Ultrathin films –Heterostructures to reduce defects Effect of antiphase domains on carrier transport Identify a crystal orientation that favors epitaxy and interface states.

22. ITRS Spring Conference 2009 Brussels, Belgium 22 Work in Progress: Not for Distribution Graphene Challenges & Status Ability to deposit graphene on appropriate substrates Producing a bandgap –Fabricating Narrow Graphene Lines –Applying a high electric field to bi-graphene Achieving high mobility in an integrated structure Achieving a high on-off conduction ratio

23. ITRS Spring Conference 2009 Brussels, Belgium 23 Work in Progress: Not for Distribution Graphene Deposition CVD of Graphene on Ni, Pt, and Ir –Graphene is strongly bonded to Ni, but has a lattice match –Graphene deposited on Pt is not distorted, is not lattice matched, but is weakly bonded SiC decomposition –Issue: High process temperature (>1100C) Exfoliation Techniques –Graphene Oxide Decomposition (Mobility <1000cm2/V-sec) Oxidation process produced islands of graphene surrounded by disordered material (hoping conduction) –Try less aggressive oxidation process –Solvent exfoliation Solvents capable of separating graphene sheets are difficult to evaporate (high boiling point) –Tape exfoliation

24. ITRS Spring Conference 2009 Brussels, Belgium 24 Work in Progress: Not for Distribution Producing a Graphene Bandgap Fabricating Narrow Graphene Lines –Requires patterning sub 20nm lines –Edge defect control is challenging (Eg & Mobility) Applying a high electric field to bi-graphene –Field ~1E7 V/cm

25. ITRS Spring Conference 2009 Brussels, Belgium 25 Work in Progress: Not for Distribution Graphene Mobility Mobility on substrates is reduced Graphene Oxide Mobility –Degraded by disordered regions

26. ITRS Spring Conference 2009 Brussels, Belgium 26 Work in Progress: Not for Distribution Nanowire Challenges Based on 2007 ERM the key challenges were: Position the nanowires during growth or reposition them after growth at the desired location and with the desired direction Provide performance exceeding patterned materials CMOS compatible catalysts. Additional –Integration of dopants –Gate Dielectric interface passivation

27. ITRS Spring Conference 2009 Brussels, Belgium 27 Work in Progress: Not for Distribution Nanotube Challenges Control of: –Location –Direction –Bandgap (Chirality & Diameter) –Carrier type & concentration Gate Dielectric Deposition Contact Resistance

28. ITRS Spring Conference 2009 Brussels, Belgium 28 Work in Progress: Not for Distribution Nanowire 2009 Potential Technology Advantages Status of demonstration Key Challenges & Status Position the nanowires during growth or reposition them after growth at the desired location and with the desired direction Provide performance exceeding patterned materials CMOS compatible catalysts. Additional –Integration of dopants –Gate Dielectric interface passivation

29. ITRS Spring Conference 2009 Brussels, Belgium 29 Work in Progress: Not for Distribution Critical Assessment Add a category: Potential Extendability to Beyond CMOS Saturation Velocity

30. ITRS Spring Conference 2009 Brussels, Belgium 30 Work in Progress: Not for Distribution Beyond CMOS M. Garner Molecular State (Alex Bratkovski & Curt Richter) Spin Materials (U-In / Kang Wang) –Ferromagnetic Semiconductors (III-V & Oxides) –Magnetoelectric Materials (Alloys, Heterostructures, superlattices) –Spin Injection Materials (Low barrier ferromagnetic metals, half metals, etc) –Spin Tunnel Barriers (MgO, etc) –Semiconductor & nanostructure Spin Transport properties (Si, Ge, Graphene, CNT, etc),

31. ITRS Spring Conference 2009 Brussels, Belgium 31 Work in Progress: Not for Distribution ERM Beyond CMOS Scope: 2009 2007Transition InTransition Out2009 Molecules & Interfaces Transition out? Inadequate progress Status FM Semiconductors Curie Temp Table Tc Graph FM Oxide Semiconductors Status, Table or Graph Spin Semiconductor Status Spin Tunnel Materials Status Magnetoelectric materials & structures Status Low barrier spin injection materials Status

32. ITRS Spring Conference 2009 Brussels, Belgium 32 Work in Progress: Not for Distribution Spin Materials Ferromagnetic III-V (Mn) semiconductors have verified Curie temperatures 100-200K –Carrier mediated exchange Nanowires of GeMn have reported ferromagnetic properties at 300K+, but carrier mediated exchange with gated structure is difficult to verify Oxides doped with transition metals have ferromagnetic properties –Ferromagnetism can be controlled with carrier doping, but it isn’t clear whether this can be modulated with electric fields –Ferromagnetism is proposed to be in an impurity band vs. the oxide bands. –It is not clear whether this is useful for device applications

33. ITRS Spring Conference 2009 Brussels, Belgium 33 Work in Progress: Not for Distribution Spin Materials (Cont.) Spin Tunnel Barrier Materials –MgO crystalline material is the best spin selective tunnel barrier to date May work with a limited number of materials due to lattice match requirement –Films must be ~9A thick –Al2O3 films work, but with much lower selectivity Multiferroics –Need higher coupling coefficient (Electrical to Magnetic) Nanostructures Heterostructures –BaFeO3 has ferroelectric & antiferromagnetic properties coupled Limited degrees of freedom & low coupling

34. ITRS Spring Conference 2009 Brussels, Belgium 34 Work in Progress: Not for Distribution Strongly Correlated Electron State Materials (For Spin Logic) Potential Physics of Interest –Competing Non-Ferromagnetic/ Ferromagnetic Phase Transitions Nanoscale phase segregation near phase transition compositions Magnetic fields can convert the phases (multi Tesla) –Insulator to Ferromagnetic Metallic state Carrier doping may be able to cause the transitions –Electric Field –Issues: Most phase transitions occur below room temperature Phase transitions may be first order “Pure” phases may not exist (Nanoscale phase segregation)

35. ITRS Spring Conference 2009 Brussels, Belgium 35 Work in Progress: Not for Distribution Strongly Correlated Electron State Heterointerfaces (For Spin Logic) Oxide heterointerfaces don’t appear to have interface pinning Interfacial reconstruction at charged interfaces –Charged interfaces result in interface reconstruction –Hole doped interfaces are “metallic”

36. ITRS Spring Conference 2009 Brussels, Belgium 36 Work in Progress: Not for Distribution Phase Competition

37. ITRS Spring Conference 2009 Brussels, Belgium 37 Work in Progress: Not for Distribution Nanoscale Phase Segregation

38. ITRS Spring Conference 2009 Brussels, Belgium 38 Work in Progress: Not for Distribution 1 st Order Phase Transitions Coexistence of competing phases

39. ITRS Spring Conference 2009 Brussels, Belgium 39 Work in Progress: Not for Distribution Heterostructures

40. ITRS Spring Conference 2009 Brussels, Belgium 40 Work in Progress: Not for Distribution Heterostructures Surface reconstruction hole generation No polar discontinuity except at STO/LaAlO3 interface

41. ITRS Spring Conference 2009 Brussels, Belgium 41 Work in Progress: Not for Distribution ERM Beyond MOS Memory: 2009 2007Transition InTransition Out2009 Complex Metal Oxide Resistance Change Status Oxides & Interfaces FE Memory Status Nanotube for Nanomechanical memory Status Molecules & interfaces for Molecular Memory Transition out?Status MRAM MaterialsStatus Ionic Transport Materials

42. ITRS Spring Conference 2009 Brussels, Belgium 42 Work in Progress: Not for Distribution Oxide Memory Materials Multiple mechanisms proposed –Phase transformation –Change of polarization alignment (E or H) –Nanofilament formation –Cation migration Role of vacancy concentration on cation migration? –Anion Migration Role of vacancy concentration on anion migration? Should we assess the consequences of the different mechanisms? (Scaling & Reliability) –Resistance Change –Ferroelectric FET & Barrier –Mott FET

43. ITRS Spring Conference 2009 Brussels, Belgium 43 Work in Progress: Not for Distribution Mechanism Assessment Cation migration (Ag, Cu) Filament formation –Vacancy concentration dependence Anion migration –Vacancy concentration dependence Charge Trapping sites and effects Electronic Phase Transition –Mott FET

44. ITRS Spring Conference 2009 Brussels, Belgium 44 Work in Progress: Not for Distribution C. Dubourdieu - LMGP-CNRS & D. Bensahel - STMicroelectronics - France 44 In December 2007, the journal Science considered the recent discoveries emerging from oxide interfaces as one of the 10 breakthrough of the year 2007 Oxides interfaces -New properties arise from surface, electronic or orbital reconstructions. (Stacking for example two insulating compounds such as LaAlO 3 and SrTiO 3 can lead to a metallic or superconducting LaAlO 3 /SrTiO 3 interface) -Interfaces in superlattices can change the nature of the coupling between competing instabilities and produce new properties. (superlattices combining the proper ferroelectric PbTiO 3 and the paraelectric SrTiO 3 compounds behave like a prototypical improper ferroelectric due to interface coupling based on rotational distortions).

45. ITRS Spring Conference 2009 Brussels, Belgium 45 Work in Progress: Not for Distribution Memory & Oxides DeviceMaterialsMaterial Mechanisms Interface Mechanisms Thermal Resistance Change NW Chalcogenides Thermal Amorphous Chrystal Phase Change Electrochemical Resistance Change Cu & Ag with Oxides or sulfides TiO2, CuO Cation or Anion Migration Electrochemical Charge Trapping

46. ITRS Spring Conference 2009 Brussels, Belgium 46 Work in Progress: Not for Distribution Memory & Perovskites DeviceMaterialsMaterial Mechanisms Interface Mechanisms FE FETPZT, BFOFerroelectric Polarization Electrodes can degrade reliability Pt: Hydrogen: SRO preferred FE Barrier (DROP) Check with Victor PZT, BFO, etc. Ferroelectric Polarization changes Schottky Barrier height or charge TBD Mott FETPCMO, LCMO, STO Carrier injection drives a metal insulator transition TBD

47. ITRS Spring Conference 2009 Brussels, Belgium 47 Work in Progress: Not for Distribution Perovskite Challenges Ferroelectrics: Electrode Interactions –Pt: Hydrogen ion generation degrades polarization –SRO: Increases resistance Strongly Correlated Electron Material Challenges (Mott M-I Transition) –Nanoscale phase segregation may suppress sharp transition –Materials are very sensitive to stress (Piezo effects) Selection of substrate & interface layers –“Disorder” can dramatically reduce critical temperatures

48. ITRS Spring Conference 2009 Brussels, Belgium 48 Work in Progress: Not for Distribution Molecular Devices Top contact formation is still a significant issue Determining that switching is due to the molecular energy levels is difficult

49. ITRS Spring Conference 2009 Brussels, Belgium 49 Work in Progress: Not for Distribution ERM for Lithography (Dan Herr, Bill Hinsberg, & Atsushi Shiota) ERM for Patterning –Novel Macromolecules for Resist Multi wavelength resist (Dual exposure) Pixellated resist –Novel Macromolecules for Contrast Enhancement Layer Multi wavelength CEL (Dual Exposure) (Drop?) –Novel molecules for Non CAR (TBD at Workshop) –DSA Materials –Imprint molecules (Transition? ) Functional materials ERM for Immersion Fluids –Nanoparticles for immersion fluids (Transition Table?)

50. ITRS Spring Conference 2009 Brussels, Belgium 50 Work in Progress: Not for Distribution Litho 2008 –General: ERM requested confirmation of timing, metric families, and quantitative metrics –3rd generation immersion lithography technology: There was considerable discussion on this topic; Concern was expressed that this technology may be pushed out too far to meet required insertion windows; 2012 insertion appears unlikely It was agreed that the ERM WG would wait for the Litho TWG to address this issue and make a recommendation; –Novel macromolecules for resist applications: Use the same criteria as is used for resist. –Increased interest in intermediate state photochemistry, chemical image enhancement, two photon patterning, imprint, optical threshold layers, and non-CAR systems –Nanoparticles: Drop the optics abrasion requirement, since this would be a difficult property for the university research community to characterize; –Directed self assembly for patterning applications: The Lithography ITWG reviewed the DSA research requirements and agreed to provide feedback at a later date.

51. ITRS Spring Conference 2009 Brussels, Belgium 51 Work in Progress: Not for Distribution ERM Litho Scope: 2009 2007Transition InTransition Out2009 Resist Molecular Design To Litho TWG Molecular GlassesTo Litho TWG Pixillated ResistAssess Directed Self Assembly Assess Dual Exposure Resist Molecules Into ERMDoes it have a window of opportunity? Assess at WS Dual Wavelength CEL Layer Molecules Into ERMAssess at WS (Drop?) Non-CAR Molecules Into ERMAccess at WS High index Immersion Fluids Transition out?TBD Imprint Molecules Imprint Resist? Evolutionary, Remove? TBD

52. ITRS Spring Conference 2009 Brussels, Belgium 52 Work in Progress: Not for Distribution Macromolecules for Resist Approaches focus on decreasing feature size and LER –Molecular Glasses: Increase homogeneity –Non CAR: Photoactive polymer scission –Pixillated resist –Double Exposure Materials 2 Stage rCEL (Not Viable) 2 stage PAG molecules –Requirements (stage 1 reversable) –Tethered Anthracene Family –Photoinduced phase change to modulate acid diffusion –Pattern collapse is a serious challenge for all resist –Metrology Needs LER

53. ITRS Spring Conference 2009 Brussels, Belgium 53 Work in Progress: Not for Distribution Molecular Glasses

54. ITRS Spring Conference 2009 Brussels, Belgium 54 Work in Progress: Not for Distribution Non CAR Resist Require higher intensity exposure Improved source intensity and lens life at higher intensity

55. ITRS Spring Conference 2009 Brussels, Belgium 55 Work in Progress: Not for Distribution Pixillated Resist

56. ITRS Spring Conference 2009 Brussels, Belgium 56 Work in Progress: Not for Distribution

57. ITRS Spring Conference 2009 Brussels, Belgium 57 Work in Progress: Not for Distribution Double Exposure Resist

58. ITRS Spring Conference 2009 Brussels, Belgium 58 Work in Progress: Not for Distribution

59. ITRS Spring Conference 2009 Brussels, Belgium 59 Work in Progress: Not for Distribution

60. ITRS Spring Conference 2009 Brussels, Belgium 60 Work in Progress: Not for Distribution Summary from Workshop Novel chemical system for advanced lithography Objective of the workshop Discuss alternative approaches to self assembly and conventional CAR for EUVL. Materials contributions to the future lithography are how to increase resolution and how to decrease LWR. Technology discussed 1. Non chemical amplified resist (non-CAR) 2. Negative tone photoresist 3. Intermediate State Two-Photon Material (ISTP) 4. Optical Threshold Layer (OTL) Outcomes New un-zipping mechanisms were proposed and demonstrated reduction of LWR. Negative tone cross-linking may eliminate acid diffusions but cross linking or polymer propagation competing to diffusion controlled also should be minimised. Molecular glass itself cannot solve the LWR issues, homogeneity would be a key. ISTP mechanism were demonstrated in 254nm. ISTP generates “acid” in dual wavelengths and PAGs and sensitizers not undergoing both exposures must revert to an original state Photo/Thermal initiated phase changes can be utilised a chemical mask to control diffusions. The concept was proven.

61. ITRS Spring Conference 2009 Brussels, Belgium 61 Work in Progress: Not for Distribution 61 Contribution of Uniformity in Molecular Glass Architectures Presentation from Prof. Henderson @ GT Some have shown dramatically better LER at high speeds as compared to conventional CARs Good resolution can be achieved by reduction in acid diffusion Sensitivity is lower than expected, but can be improved based on studies of non- ionic PAG behavior under high energy. Binding sulfonic acid and PAG to molecular glass cores provides potential path forward in resist design required for high resolution and low LER.

62. ITRS Spring Conference 2009 Brussels, Belgium 62 Work in Progress: Not for Distribution Self-Developing Resists Presentation from Prof. Whittaker @ UQ Synthesis –Alternating copolymer of sulfur dioxide and an alkene Exposure –Sulfur dioxide is an excellent leaving group and absorption of a photon can result in chain scission Post Exposure Bake –Radicals generated as a result of chain scission will initiate depolymerisation when film is baked above T c

63. ITRS Spring Conference 2009 Brussels, Belgium 63 Work in Progress: Not for Distribution PAG Sensitizer Latent h H+ PAG Step 1 11  1 PAG Step 2 22 PAG Sensitizer e-e- Step 3 h H+ ISTP Proof-of-Principle Acid Generation System Presentation from Prof. Wilson @ UT * N. O’Connor et al. Chem Mat. 2008 (accepted) 254 nm Successful demonstration of proof-of-principle system

64. ITRS Spring Conference 2009 Brussels, Belgium 64 Work in Progress: Not for Distribution Wafer First ExposurePhase changeDiffusion and reaction occursFlood ExposureSecond ExposureStrip the top two layersEtch Putting It Together: Possible Patterning with OTL Presentation from Prof. Wilson @ UT Feeder Layer Optical Threshold Layer Acceptor Layer FeederAcceptor Product with High Etch Resistance Photo-induced phase/permeability change Below threshold exposure dose Low permeability for feeder layer High permeability for feeder layer Above threshold exposure dose Use phase/permeability change to change etch resistance

65. ITRS Spring Conference 2009 Brussels, Belgium 65 Work in Progress: Not for Distribution Leading two-stage approach: Presentation from Dr. Bristol @ Intel Photochromic Switches Based on 4π + 4π cycloaddition Naphthalene-based: Naphtali A. O’Connor, Adam J. Berro, Jeffrey R. Lancaster, Xinyu Gu, Steffen Jockusch, Tomoki Nagai, Toshiyuki Ogata, Saul Lee, Paul Zimmerman, C. Grant Willson and Nicholas J. Turro, Chem. Matr., 20 pp7365-7524, (2008).

66. ITRS Spring Conference 2009 Brussels, Belgium 66 Work in Progress: Not for Distribution Progress in Directed Self Assembly Use of Alignment “fiducial” structures to force long range order (Cylindrical structures) Use surface energy to force dense self assembly to sparse patterns Scalability: Features demonstrated to 7nm Patterns: Square “Cylindrical Arrays” Demonstrated

67. ITRS Spring Conference 2009 Brussels, Belgium 67 Work in Progress: Not for Distribution Fiducials to Force Long Range Order

68. ITRS Spring Conference 2009 Brussels, Belgium 68 Work in Progress: Not for Distribution Sparse Pattern Assembly Pinning feature needs to match self assembly feature size DSA can “heal” defects in the pinning layer Defect levels need to be determined

69. ITRS Spring Conference 2009 Brussels, Belgium 69 Work in Progress: Not for Distribution Square “Contact” Arrays Modular tunable Supramolecular Tri-block approach may enable new structures

70. ITRS Spring Conference 2009 Brussels, Belgium 70 Work in Progress: Not for Distribution Critical Assessment

71. ITRS Spring Conference 2009 Brussels, Belgium 71 Work in Progress: Not for Distribution ERM for FEP Dan Herr Deterministic Doping –Research Equipment Options –Self Assembly Driven Selective Etches & Cleans –Research or Engineering? Selective Deposition

72. ITRS Spring Conference 2009 Brussels, Belgium 72 Work in Progress: Not for Distribution FEP 2008 –General: –FEP will provide feedback on specific material assessment criterion For selective deposition processes: –Focus on techniques to deposit graphene on silicon and processes for selective deposition of III-V compounds –Graphene: Assess cleaning chemistries, processing, and edge passivation –III-V Alternate channel materials: Assess cleaning chemistries, processing, and edge passivation –Directed self assembly: Establish deterministic doping targets and requirements –Dielectric materials: Establish and assess projected high-  research requirements for the DRAM capacitor, especially at projected film thicknesses The current FEP requirements table shows that the dielectric constant is projected to reach 120, and then decrease to ~90, which appears to be unrealistic. FEP will resolve this apparent inconsistency. –Spin materials: Add to FEP’s ERM assessment tables

73. ITRS Spring Conference 2009 Brussels, Belgium 73 Work in Progress: Not for Distribution ERM FEP/PIDS 2009 Scope 2007Transition InTransition Out2009 Directed Self Assembly (DSA) for Deterministic Doping Status Shuttered Implant for Deterministic Doping Into ERMStatus & Challenges DSA Selective Deposition Status & Challenges DSA Selective EtchResearch or Engineering? Status & Challenges DSA Selective Cleans EngineeringStats & Challenges

74. ITRS Spring Conference 2009 Brussels, Belgium 74 Work in Progress: Not for Distribution Deterministic Doping Potential Options Considered  Ion Implantation  Shallow doping via SAMs  STM positioning  Other potential options cited:  Directed Self-Assembly

75. ITRS Spring Conference 2009 Brussels, Belgium 75 Work in Progress: Not for Distribution Ultra Shallow Chemical Doping 75 Strategy: 1.Boron monolayer formation on Si 2.Capping with SiO 2 cap 3.RTA to diffuse the B atoms Johnny Ho, et al, Nature Materials, 2008. UC-Berkeley Objectives:  Ultra-shallow junction formation  Precise control over the dose at nanoscale  MS junctions with heavily doped “self- aligned” semiconductor for NW and planar device geometries Chemistry is important for nano devices!

76. ITRS Spring Conference 2009 Brussels, Belgium 76 Work in Progress: Not for Distribution STM-Device Patterning: Summary 76 UNSW

77. ITRS Spring Conference 2009 Brussels, Belgium 77 Work in Progress: Not for Distribution High placement accuracy methods, <1 nm, i.e. STM –Not likely to become manufacturable Massively parallel approaches face significant data management challenges. –Potentially useful for understanding device limits and new functionality, such as symmetry and quantum effects Medium placement accuracy methods, ~10 nm, i.e. Single Ion Implantation –Exhibit potential for development Potential high placement accuracy, high throughput options: –Projected manufacturing requirements require new doping concepts –Exploratory approaches considered: Directed self-assembly, such as Javey’s SAM delivery method 77 Deterministic Doping Workshop: Summary

78. ITRS Spring Conference 2009 Brussels, Belgium 78 Work in Progress: Not for Distribution While deterministic doping options considered remain far from manufacturable, they are useful for understanding extensibility limits and exploring new device functionality. –Single Ion Implantation methods exhibit the potential for:  Achieving near 10 nm placement control  Throughputs compatible with extensible device development –SAM assisted shallow doping methods, with near nm placement control, enable device studies near the projected limits of charge based FET technology. –STM based deterministic doping, with near atomic level placement control, provides a tool and methodology for exploring radical device concepts with novel functionality. Manufacturable deterministic doping options may integrate top down patterning with materials designed to deliver dopants deterministically and effect desired properties. 78 ERM for FEP: Key Deterministic Doping Messages for the 2009 ITRS Revision

79. ITRS Spring Conference 2009 Brussels, Belgium 79 Work in Progress: Not for Distribution Interconnects Yuji Awano & Sean King ERM for low impedance interconnects & Vias –CNTs –Nanowires –Graphene ERM for Low κ ILD –Macromolecules (Dan check with Scott List) Selective Etch & Deposition

80. ITRS Spring Conference 2009 Brussels, Belgium 80 Work in Progress: Not for Distribution 2008 Interconnect –General: To ensure a meaningful comparison, standardize metrics for each application, across the set of candidate materials, e.g. CNTs, graphene, and nanowires for interconnect applications –Add Chris Case to the ERM Distribution list –Alternate channel materials: Focus on contact materials for Ge and III-V materials. Contact resistance and S/D leakage are critical properties that need to be addressed –CNTs for Interconnects: –Separate this topic into via and planar interconnect applications –CNT interconnects must have a conductivity at least 2X greater than copper Graphene Interconnects: –Determine the width and layer thickness dependence of the conductivity –Novel Barrier Layers: Target barrier layer thicknesses of 1-2 atomic layers It is imperative to realize low process integration complexity Barrier material candidates must provide a good diffusion barrier to Cu

81. ITRS Spring Conference 2009 Brussels, Belgium 81 Work in Progress: Not for Distribution ERM Interconnect Scope: 2009 2007Transition InTransition Out2009 Nanotube Interconnects Assess Nanowire Interconnects Assess Nanotube ViasAssess Nanowire ViasAssess 1-2 monolayer barriers ERMAssess Macromolecule Low K ILD Need k<2.0 DSA EtchTransition?Status DSA Selective Deposition Transition?Status

82. ITRS Spring Conference 2009 Brussels, Belgium 82 Work in Progress: Not for Distribution

83. ITRS Spring Conference 2009 Brussels, Belgium 83 Work in Progress: Not for Distribution Most reports are for 20nm thick layers Need to understand the mechanism Explore ALD compatible options

84. ITRS Spring Conference 2009 Brussels, Belgium 84 Work in Progress: Not for Distribution

85. ITRS Spring Conference 2009 Brussels, Belgium 85 Work in Progress: Not for Distribution Emerging Interconnect Applications  Vias Multi-wall CNT Higher density Contact Resistance Adhesion  Interconnects Metallic Alignment Contact Resistance  Dielectrics Novel Polymer ILDs Y. Awano, Fujitsu H. Dai, Stanford Univ. Quartz Crystal Step Alignment Ref. 2005 ITRS, INT TWG, p. 22 ERMs Must Have Lower Resistivity Cu

86. ITRS Spring Conference 2009 Brussels, Belgium 86 Work in Progress: Not for Distribution

87. ITRS Spring Conference 2009 Brussels, Belgium 87 Work in Progress: Not for Distribution

88. ITRS Spring Conference 2009 Brussels, Belgium 88 Work in Progress: Not for Distribution

89. ITRS Spring Conference 2009 Brussels, Belgium 89 Work in Progress: Not for Distribution

90. ITRS Spring Conference 2009 Brussels, Belgium 90 Work in Progress: Not for Distribution Assembly & Packaging Nachiket Raravikar & Raja Swaminathan ERM for Thermal Heat Spreading using novel materials/structures Low Temperature Lead free Assembly for better reliability of electronic packages Chip to Package Electrical Interconnects Controlled polymer properties –Application –Process –Operation –Halogen Bromine Free –Multi-functionality High Performance Package Capacitors Energy & Bio Application requirement & status will be descriptive in 2009 (specific to packaging?)

91. ITRS Spring Conference 2009 Brussels, Belgium 91 Work in Progress: Not for Distribution 2008:ERM WG - Assembly and Packaging ITWG: CNTs for thermal interface Applications: –Critical metrics: Low contact resistance and CNT density –Even though this technology is low on the learning curve and commercial viability usually ranks as a low priority metric during the exploratory phase of research, researchers are encouraged to consider cost implications as one of several critical success factors for assessing the potential maufacturability of the CNT TIM; Insulating nanoparticles for package filler applications: –Add biocompatibility and assess cost implications Nanometal for chip attach applications: –Include the following additional families of requirements: melting point, electrical conductivity, electromigration resistance, stress relief, inter-metallic formation, and properties, as needed, for predictive modeling. Macromolecules for polymer adhesion applications to different materials: –Add water absorption (free), CTE, modulus, bonding, and debonding Complex metal oxides: –Add dielectric constant at minimum thickness and charge leakage Assembly & Packaging Priorities for e-Workshops were: –Priority #1: Assembly & Package Dielectrics High and Low K materials –Priority #2: Nanocomposite moisture barriers and adhesion materials –Priority #3: Low temperature assembly materials & nanowires –Priority #4: Carbon Nanotube thermal Interface materials

92. ITRS Spring Conference 2009 Brussels, Belgium 92 Work in Progress: Not for Distribution ERM A&P Scope: 2009 2007Transition InTransition Out2009 Nanotube Electrical Interconnects Status Nano soldersStatus Nanocomposite package polymers Status High density, high performance capacitors Status Nanotube thermal interface materials Status Low assembly temperature materials (ACF?) Add to ERM (?)Status Ag Nano ACF Nanowires for Power & Detectors Add to ERMStatus

93. ITRS Spring Conference 2009 Brussels, Belgium 93 Work in Progress: Not for Distribution ITRS 2008 ERM A&P Workshops: key learnings Nachiket Raravikar & Raja, Yuji Awano Intel Corporation September 2008

94. ITRS Spring Conference 2009 Brussels, Belgium 94 Work in Progress: Not for Distribution Title: CNT Interconnects & Thermal Challenges –Focus: Update the progress in assembly compatible integration & contact resistance control of CNT for interconnect and thermal applications –Teleconference [Apr-May’08] Prof. Banerjee, UCSB [May’08] Prof. Majumdar, UC-Berkeley [Aug’08] Focus area 1: CNT Organizer: Nachiket Raravikar

95. ITRS Spring Conference 2009 Brussels, Belgium 95 Work in Progress: Not for Distribution CNT TIM workshop summary The following two still remain challenges in CNT TIM applications: 1.Controlling CNT array density -Best density up to ~ 10 10 – 10 11 /cm 2 achieved by optimizing the catalyst under-layer thickness; -It’s not clear what the target density should be and whether an array density higher than the above could be achieved 2.Increasing bonding or wetting of CNT with Si, SiO 2 and metals to lower thermal interface resistance -Lowest thermal interface resistance achieved by In coating of CNT: Interfacial conductance [glass-In-CNT-Si]: 3.1±1.5 MW/m 2 ∙K as compared to Glass-CNT-Si: 0.075±0.005 MW/m 2 ∙K -Issue of In wetting on CNT remain -Not many strategies exist on improving thermal interface conductance between CNT-Si or CNT-metals -Realistic targets of experimentally achievable interfacial thermal conductance need to be defined

96. ITRS Spring Conference 2009 Brussels, Belgium 96 Work in Progress: Not for Distribution CNT summary The following has been achieved... Low electrical contact resistance, close to theoretical value, has been achieved experimentally High frequency response of nanotubes (impedance, inductance, skin effect) has been modeled and skin effect is predicted to be negligible Some progress towards achieving high density CNT arrays 10 10 – 10 11 /cm 2 In-CNT interface shown to reduce thermal interface resistance The following challenges or unknowns still remain... Low T CVD growth of CNT Increasing CNT array density Reducing CNT electrical and thermal contact resistance

97. ITRS Spring Conference 2009 Brussels, Belgium 97 Work in Progress: Not for Distribution Title: Polymer nano-composites mechanical, rheological challenges Focus: 1. Adhesion: Update progress in interfacial adhesion control between nanoparticles and matrix as well as between polymers and metals; –2. Multifunctionality: high toughness, low CTE, high/low modulus, flow properties etc. using nano-fillers; –3. Moisture diffusion barriers: block moisture diffusion for regular as well as MEMS packages –Teleconference Prof. Giannelis, Cornell [Aug’08] Focus area 2: Polymer Nano-composites Organizer: Nachiket Raravikar

98. ITRS Spring Conference 2009 Brussels, Belgium 98 Work in Progress: Not for Distribution Polymer Composite Properties

99. ITRS Spring Conference 2009 Brussels, Belgium 99 Work in Progress: Not for Distribution Macromolecules/nano-composites workshop summary Adhesion improvement with nano-composites –Adhesion enhancement is shown with nanocomposites, however the mechanism is not well understood (nanoclay composite to Silicon) Nano-composite mechanical property enhancement [modulus, CTE, toughness, elongation] –Decoupling of properties (stiffness-toughness) is a very attractive feature of nano-composites and has been demonstrated with various composite systems –Hypotheses of toughening of nano-composites are in place: nano- particle migration to crazes to prevent crack propagation; hypothesis validation is not done yet Nano-composite moisture absorption –Relative permeability is shown to drop significantly at very small volume fractions of nanoparticles [silicates] Dispersion, interface tailoring of nano-fillers with polymer matrix –Various surface chemistries demonstrated to improve dispersion of nano-silica (particles or clays) in composites: epoxy silica, amino silica, HMDS silica –Dispersion issues still remain such as intercalation or exfoliation of clay or nano-particle clusters, delamination at filler-matrix interface

100. ITRS Spring Conference 2009 Brussels, Belgium 100 Work in Progress: Not for Distribution ERM for Low Assembly Temperature Nano-solders/ECA Nano-solders –< 10nm SnAg Melting point reduced to 194C Surfactant passivation required for oxidation prevention Surfactants decompose and good solder joint forms with 230C reflow Need to show good solder joints at lower reflow temperatures –10nm SnAgCu melting point reduced to 199C Surfactant passivation required Recrystallization temperature also reduced to 103C Wettability improvement with rare earth dopants Electrically conductive adhesives –Lower temperature cure (< 200C) instead of reflow Ag flakes in epoxy resin –Isotropic (ICA) –Anisotropic (ACA) –Improved contact resistance with oxygen scavengers and corrosion inhibitors (Galvanic corrosion established as main mechanism for reduced contact resistance) –Increased current carrying capability using liquid phase sintering and reducing agent additions –Integrated self assembled monolayer improved adhesion –ECA with a higher shrinkage shows a higher conductivity –Conductivity can be improved by using multifunctional epoxy –Impact performance of ICA could be enhanced by elastomer-modified epoxy –Ag migration in ECAs could be dramatically reduced by monolayer protection –Challenges: Processability (Solidification, Voids, pressure, temperature, time control), Electrical Performance: (Low current carrying capability, lack of self alignment), Reliability (High Moisture Absorption (low filler loading), High CTE, Reworkability, and identifying low cost fillers.

101. ITRS Spring Conference 2009 Brussels, Belgium 101 Work in Progress: Not for Distribution ERM ESH Needs (July ’08) M. Garner & J. Jewett –Jim Jewett and Mike Garner agreed to write a white paper on NanoEHS needs to attach to the ITRS ESH & ERM chapters. Toxicology research integration and summary –Dan Herr recommended that the ESH-ERM communities consider driving the energy and health related opportunities that are emerging from the ITRS Functional Diversification agenda. This may enable the ESH community to get ahead of regulation, as functional diversification may provide enabling energy and health opportunities and enable the industry to leap frog over, remove, and/or avoid emerging issues.

102. ITRS Spring Conference 2009 Brussels, Belgium 102 Work in Progress: Not for Distribution Key Issues Develop timelines for intercept commerce Regulatory Processes –What is the Research Timelines –Resolution of Acute & Chronic Issues –Klebosol example WSC (?)

103. ITRS Spring Conference 2009 Brussels, Belgium 103 Work in Progress: Not for Distribution Metrology Needs Yaw Obeng & Alain Diebold Korea ERM asked for Reference Material needs to be added

104. ITRS Spring Conference 2009 Brussels, Belgium 104 Work in Progress: Not for Distribution Metrology 2008 –The ERM – Metrology collaborative engagement continues to increase –No new issues were identified by the ERM, except the need for nanoscale graphene characterization –For example, Alain identified a number of new physical effects under study in graphene, including electron “puddling”.

105. ITRS Spring Conference 2009 Brussels, Belgium 105 Work in Progress: Not for Distribution Metrology Characterization of Domains and Domain Walls Characterization of Magnetoelectric coupling Coefficients in “leaky materials” –U. Of Nebraska: Ubert Imaging “soft” thin materials and differentiate structure (DSA & Resist) Characterizing random defect types –Software for defect recognition (KLA)

106. ITRS Spring Conference 2009 Brussels, Belgium 106 Work in Progress: Not for Distribution ERM Metrology Gaps and Requirements  Generic Gaps  Standards and Requirements for rapidly evolving materials and techniques.  Dopant activation Metrology for USJ  Interface Metrology  Surface/film analysis on vertical surfaces  In-situ monitoring of multi-component oxides  In-Line work function measurements – band gap engineering for flash and gates  Nanowires  3-D Atom mapping for compositional analysis / doping mapping  Non-Destructive local strain/stress measurement  Graphitic Materials  Defects / Substrate Interface Characterization and Stress / Thickness control  Understand substrate effects on Raman spectroscopy (see Das et al bull. Mater. Sci. 31(3), 2008 pp579-584)  Understand angle resolved XPS Data  Harmonize and Understand Mobility data  New channel material or structures challenges  SiGe & III-V  Trigate FinFET,  Complex Oxides / Multiferroics  Better Characterization of Domain Walls  Better understanding of PFM and XMCD Data  Lithography  Precise and accurate overlay metrology  Metrology for charactering double patterning  Characterization of Immersion fluids  3-D packaging (TSV /Nanowire Interconnects  Standards  Thermomenchical stability metrology Orientation, number of layers, grain structure Nanoimprint: Stress, adhesion, interface strength, defect generation EUV resist exposure mechanism

107. ITRS Spring Conference 2009 Brussels, Belgium 107 Work in Progress: Not for Distribution Modeling Needs Sadasivan Shankar

108. ITRS Spring Conference 2009 Brussels, Belgium 108 Work in Progress: Not for Distribution Modeling 2008 –The scope of the Modeling ITWG was discussed and its relationship with the ERM WG. While much of the ERM focus lies outside the current focus of the M&S ITWG, emerging materials will require considerable application related modeling that will serve as a bridge to the design community, i.e. compact models. –More discussion is needed, especially with respect to : –ERM related metrology, compact models, application specific material models, such as the dielectric constant of thin high-  complex metal oxides and the unique domain structures of mixed phase segregated block copolymers. –Modeling is needed to extract critical information from parallel metrology measurements and to decouple nanometer scale physical interactions This should topic be included in ERM – M&S discussions

109. ITRS Spring Conference 2009 Brussels, Belgium 109 Work in Progress: Not for Distribution Needs in Materials Modeling Extension to larger scales for equilibrium calculation and temperature dependence of properties and processes –Gaps in ability to model integrated systems Metallic systems specifically transition and inner transition metals. –Need specific functionals that could be tested with more rigorous techniques, More generalized extension for band gaps –Currently hybrid and metal functionals are being developed but need to be thoroughly characterized Strongly correlated systems require model development to explain the interaction between spin, charge, and lattice changes for potential use in spin wave propagation. –Requires quantification of the energy associated with spin switching and transport and the identification of speed limitations. Extension or linking of quantum models from femtoseconds to microseconds or longer to emulate realistic synthesis and transport.

110. ITRS Spring Conference 2009 Brussels, Belgium 110 Work in Progress: Not for Distribution Modeling Status Self Assembly Modeling is adequate for current needs –“Pattern generation” modeling is a gap for Design Resist Models are not predictive over a broad range of parameter space Nanotube Modeling Needs: –Synthesis modeling is helping understand effects Why is CNT growth density is enhanced on an oxide surface, but not a metal surface? (No understanding) –No understanding of how zeolite structure controls nanotube chirality –Need Modeling of CNT-metal contacts

111. ITRS Spring Conference 2009 Brussels, Belgium 111 Work in Progress: Not for Distribution Modeling Needs III-V, Ge Modeling of the Semiconductor High K surface, and interface growth (defects Ef pinning) Graphene modeling (Electronic properties, interfaces and transport) Oxide modeling (Complex Oxides & Strongly Correlated Electron State Materials) –Multi length & time scale modeling of physical phenomena (Spin, Charge & orbital ordering, U) Impact of local & long range symmetry on observed properties and dynamics (Prediction of Macroscopic phase, properties, and behavior) Role of defects in properties, phase segregation and behavior –Heterointerface structure (reconstruction & electronic properties, U) Role of defects in properties, phase segregation and behavior –Nanoscale electronic phase segregation near phase transitions & in interfaces Effect of electric and Magnetic fields