1. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference 2005 ITRS Public Conference Emerging Research Materials Seoul, Korea December 13, 2005 Jim Hutchby – SRC Mike Garner – Intel

2. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference ERM Participants Dimitri AntoniadisMIT Marc Baldo MIT Karl Berggren MIT Charles BlackIBM Dawn BonnellPenn. Univ. Alex BratkovskiHP George BourianoffIntel John CarruthersPort. St. Univ. Sang Wook Cheong Rutgers Univ Supriyo DattaPurdue Univ. Alex DemkovU. Texas Steve ErwinNRL M. Garner Intel, Chair Bruno GhyselenSOITECH Dan HerrSRC Susan HollIntel Jim HutchbySRC Berry JonkerNRL Gerhard KlemickPurdue Univ. Ted KaminsHP Richard KeihlU. Wisc. Phil KuekesHP Louis LomeIDA Cons. Mark LundstromPurdue Kathryn MolerStanford U. David Muller Cornell U. Ramamoorthy Ramesh UCB Mark ReedYale Univ. Rafael ReifMIT Dave Robert Air Products Morley StoneDARPA Sadasivan ShankarIntel Shinichi TagakiU of Tokyo Tom TheisIBM Jim TourRice Univ. Ruud TrompIBM John Henry ScottNIST Eric VogelNIST Victor ZhirnovSRC Igor ZuticNRL Kang WangUCLA Rainer WaserAacken U. Stan WilliamsHP In Kyeong YooSamsung

3. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Devices & Material Interplay DDS Gate Device Concept Determines Material Properties Material properties optimized for device Critical Properties = Properties for Device Operation Example: CNT DOS, Eg & m eff f(chirality & diameter) Critical Properties Material Properties

4. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Strategic Thrust 1D charge state materials Molecular state materials Spin state materials Strongly correlated electron state materials Directed & self-assembly mechanisms Interface & contact materials and processes Nanomaterial Environmental, Safety, & Health Increased collaboration & coordination between synthesis, metrology and modeling –University, Govt, National Labs & Industry

5. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference 1D charge state materials –Control of properties, location & orientation Molecular state materials –Understand transport & switching mechanisms Spin state materials –Room temperature DMS materials, and spin gain Strongly correlated electron state materials –Determine potential for novel device applications Directed & self-assembly of nano-structured materials –Establish sub nm location and orientation control Interface & contact materials & processes Improved metrology & modeling for nm scale structure and material properties Key Goals

6. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference 1D Material Challenges Control diameter, nano-structure, bandgap & electronic properties Control location & orientation DD S Gate DD S 0 Device State 0 1 Charge State 1 + +

7. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Carbon Nanotube Material Progress E-Field Aligned Growth, H. Dai 2001 Patterned Growth on Silicon, H. Dai 1998 CNTs Discovered, Iijima 1991 22nm Generation requires > 10 9 transistors/cm 2 1991 DiscoveryMaterial Characterization & Improvement Control location & orientation Control of Properties Doping of CNT Sidewalls N. Minami, 1999 Chemical Separation Of Metallic and semiconductor CNTs, N. Minami, 2005

8. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Molecular State Challenges Understand the transport & switching mechanism O2NO2N NH 2 S Au Molecular State 0 Collective Conformational State S S Au Charge Storage State Device State 11 Neutral State O2NO2N NH 2 S Au - S S 0 Neutral State

9. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Molecular State Material Progress Tools Emerging to Characterize Molecular State Molecular Gadget, 1974 Inelastic Electron Tunneling Spectroscopy, M. Reed 2004 STM Molecular Switching, M. Reed 1996 Backside FTIR C. Richter, 2005 Understand Transport & Switching Mechanisms Understand Contact Formation & Interactions Complex contact & molecule interactions

10. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Spin State Challenges Room temperature ferromagnetic semiconductors (T curie) Efficient Spin Injection Materials Properties to Support Spin Gain

11. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Spin State Material Progress Need Room Temp FM Semiconductor & Spin Gain Carrier mediated exchange Overlapping Bound Magnetic Polarons, Coey, Nature 2005 Room temperature ferromagnetic semiconductors (T curie) Efficient Spin Injection Spin GAIN ?????

12. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Materials exhibit complex phase relationships Spin, charge, orbital ordering Phase transitions can be induced by small perturbations Magnetic field Phonon Charge Strongly Correlated Electron State Materials Can these materials enable new device functions? Tokura

13. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Directed Self Assembly Challenges Fabricate reproducible sublithographic features Structures aligned to lithographic features Features scale to sub 5nm resolution

14. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Sublithographic Directed Self Assembly Lithography Isolated lines Periodic lines with variable pitch and size at different locations Lines (isolated & periodic) with right angles Isolated lines with T intersections Isolated openings (contacts or vias) Periodic openings with variable pitch and size Isolated rectangular contact openings Registration between different layers is most critical!!! Goal: Determine whether fundamental mechanisms can support Directed Self Assembly of viable sublithographic structures

15. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Directed Self Assembly Progress Di-block Copolymer self assembly on patterned Molecular monolayer: Goal reduce LER P. Nealey, U. Wisc. Di-block Copolymer self assembly of magnetic materials in a confined space. C. Ross, MIT Progress in aligning self assembled structures with lithographically defined structures

16. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Nanomaterial Environmental Safety & Health (ESH) Nanomaterial ESH research needs –Included in ESH Chapter –Understand unique properties –Detection metrology –Nanomaterial management best practices

17. DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference Summary Material improvement is progressing, but…. Significant challenges for each material will require: –Improved synthesis capabilities –New metrology capabilities –Improved materials models –Improved interfaces –Directed assembly processes –Nanomaterial ESH research Significant Collaboration is Required!!!