A Defect Tolerant and Performance Tunable Gate Architecture for End-of-Roadmap CMOS Adit D. Singh Electrical and Computer Engineering, Auburn University.

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Presentation transcript:

A Defect Tolerant and Performance Tunable Gate Architecture for End-of-Roadmap CMOS Adit D. Singh Electrical and Computer Engineering, Auburn University AL National Science Foundation CNS and CCF

2 Motivation  No visibility on technology beyond CMOS  CMOS appears here to stay!  Scaling projected to continue  At least a decade of design likely in nano- scale “End-of-Roadmap” CMOS

3 End-of-Roadmap CMOS Characterized by  Atomic scale feature sizes (~100 Si atoms in 45nm)  Physical limits in material properties  Random dopant fluctuations  Extreme sub-wavelength lithography Potential for  High manufacturing defectivity  Operational wear out & degradation  Highy random performance variation

4 End-of-Roadmap CMOS Characterized by  Atomic scale feature sizes  Physical limits in material properties  Random dopant fluctuations  Extreme sub-wavelength lithography Potential for  High manufacturing defectivity  Operational wear out & degradation  Highly random performance variation Defect Tolerance Performance Tuning

Clock Speed and Parameter Variation  Clock rate determined by slowest path  Manufacturing variability forces different clock rates: “Speed Binning”  Speed Binning works for systematic variability  Less effective for random variability Comb. Logic FF Clock

Speed Binning Traditional Systematic Variability  Device parameters track within a chip within a chip  All gates slow or all fast  Some chips slow, some fast fast  Average clock rate over many manufactured parts many manufactured parts = clock rate for average = clock rate for average parameter values parameter values FF Clock

Random Variability  Random parameter variability within chip  Every copy of a large circuit highly likely to have a few very slow paths  Average clock frequency << clock rate for average << clock rate for average parameter values parameter values (for large circuits) (for large circuits) FF Clock

Random Variability Statistical: 1 in 100 very slow gate 18 gate design 150 gate design A few slow parts Virtually all slow parts

9 Normal Distribution

Random Variability: Speed Vs Size  Large circuits statistically more likely to have one or more slow outlier paths FF Clock (log scale) Circuit Size Average worst case path delay worst case path delay

Post Manufacture Performance Tuning “Delay Fault Tolerance”  Capability to allow speed-up of statistically slow outlier paths FF Clock (log scale) Circuit Size Average worst case path delay worst case path delay GOAL

12 Defect Tolerant & Tunable CMOS P-Net N-Net Sized and Programmable Sized and Programmable Switch Programmable Switch

13 Defect Free Operation P-Net N-Net Sized and Programmable Sized and Programmable ON OFF ON Traditional CMOS

14 Defect in P-Net P-Net N-Net OFF ON  Pseudo nMOS operation  Pull-up sized for ratio logic  R pu ~ 4 R pd

15 Defect in N-Net P-Net N-Net OFF ON  Pseudo PMOS operation  Pull-down sized for ratio logic  R pd ~ 4 R pu

16 Performance Tuning: Slow P-transistor P-Net N-Net ON OFF  Redundant PMOS speeds up rising transitions  Speed up greatest for very slow outlier transistor  Some slow down of opposite falling transitions 

17 Performance Tuning: Slow P-transistor P-Net N-Net ON OFF Assume nominal Rpu = Rpd and R_tuning = 4 Rpd Defective Extra Delay Rpu Untuned Tune d 1.5X 0.5X 0.10X 2X 1X 0.33X 4X 3X 1.00X 6X 5X 1.40X 8X 7X 2.20X 1X 0X - 0.2X Speedup

18 Performance Tuning: Slow P-transistor P-Net N-Net ON OFF Assume nominal Rpu = Rpd and R_tuning = 4 Rpd Defective Extra Delay Rpu Untuned Tune d 1.5X 0.5X 0.10X 2X 1X 0.33X 4X 3X 1.00X 6X 5X 1.40X 8X 7X 2.20X 1X 0X - 0.2X Speedup

19 Performance Tuning: Slow P-transistor Defective Extra Delay Rpu Untuned Tune d 1.5X 0.5X 0.10X 2X 1X 0.33X 4X 3X 1.00X 6X 5X 1.40X 8X 7X 2.20X 1X 0X - 0.2X Assume 10 level path Untuned delay = 13X Tuned Delay = 11 X Tuning 2 additional gates: Tuned Delay = 10.6X Speedup

20 Simulation Experiments  Simplified simulation of inverter chains  Transistor parameters drawn from a Normal Distribution - different variance values  Circuit size measured by number of chains  For each “circuit” worst case untuned and tuned delays obtained.

Post Manufacture Performance Tuning “Delay Fault Tolerance”  Simulate and average over a large number of instances for each “circuit” size FF Clock (log scale) Circuit Size Average worst case path delay worst case path delay GOAL

Observed Delay Variations Tuned and Untuned x Delay (sec) Standard Deviation = 1/6 mean 8 stage inverter chains 20%

Observed Delay Variations for different sigmas Delay (sec) Number of circuits(log scale) x

24 Defect Tolerant & Tunable CMOS Gate P-Net N-Net Sized and Programmable Sized and Programmable Switch Programmable Switch Conclusion End-of-Roadmap Applications