Spring 2007EE130 Lecture 43, Slide 1 Lecture #43 OUTLINE Short-channel MOSFET (reprise) SOI technology Reading: Finish Chapter 19.2.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

1 LINLITHGOW ACADEMY PHYSICS DEPARTMENT MOSFETs 2 MOSFETS: CONTENT STATEMENTS Describe the structure of an n-channel enhancement MOSFET using the terms:

EE130/230A Discussion 12 Peng Zheng 1. Velocity Saturation Velocity saturation limits I Dsat in sub-micron MOSFETS Simple model: E sat is the electric.

Metal Oxide Semiconductor Field Effect Transistors

ECE 663 MOSFET SCALING. ECE 663 Scaling of switches.

Spring 2007EE130 Lecture 41, Slide 1 Lecture #41 QUIZ #6 (Friday, May 4) Material of HW#12 & HW#13 (Lectures 33 through 38) –MOS non-idealities, V T adjustment;

1 ELEC 422 Applied Integrated Circuit Design Section 2: MOS Fundamentals Chuping Liu [Adapted from Rabaey’s Digital Integrated Circuits, ©2003, J. Rabaey.

Chapter 6 The Field Effect Transistor

8/29/06 and 8/31/06 ELEC / Lecture 3 1 ELEC / (Fall 2006) Low-Power Design of Electronic Circuits (ELEC 5970/6970) Low Voltage.

Lecture 11: MOS Transistor

Spring 2007EE130 Lecture 35, Slide 1 Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1.

10/8/2004EE 42 fall 2004 lecture 171 Lecture #17 MOS transistors MIDTERM coming up a week from Monday (October 18 th ) Next Week: Review, examples, circuits.

Copyright Agrawal, 2007 ELEC6270 Fall 07, Lecture 5 1 ELEC 5270/6270 Fall 2007 Low-Power Design of Electronic Circuits Low Voltage Low-Power Devices Vishwani.

Lecture #16 OUTLINE Diode analysis and applications continued

The metal-oxide field-effect transistor (MOSFET)

CSCE 612: VLSI System Design Instructor: Jason D. Bakos.

Lecture #25a OUTLINE Interconnect modeling

Reading: Finish Chapter 6

Week 9a OUTLINE MOSFET ID vs. VGS characteristic

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Spring 2007EE130 Lecture 36, Slide 1 Lecture #36 ANNOUNCEMENTS Updated information for Term Project was posted on 4/14 Reminder: Coffee Hour today at ~4PM!

Spring 2007EE130 Lecture 38, Slide 1 Lecture #38 OUTLINE The MOSFET: Bulk-charge theory Body effect parameter Channel length modulation parameter PMOSFET.

EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.

Spring 2007EE130 Lecture 40, Slide 1 Lecture #40 OUTLINE The MOSFET: Velocity saturation Reading: Chapter 19.1.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Optional Reading: Pierret 4; Hu 3

EE130/230A Discussion 13 Peng Zheng 1. Why New Transistor Structures? Off-state leakage (I OFF ) must be suppressed as L g is scaled down – allows for.

Lecture 19 OUTLINE The MOSFET: Structure and operation

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

EE130/230A Discussion 11 Peng Zheng.

ECE 342 Electronic Circuits 2. MOS Transistors

Chapter 5: Field Effect Transistor

Silicon – On - Insulator (SOI). SOI is a very attractive technology for large volume integrated circuit production and is particularly good for low –

Source: Lundstrom/Fossom/Yang/Neudeck, Purdue EE612 lecture notes.

Chapter 4 Field-Effect Transistors

DMT121 – ELECTRONIC DEVICES

Grace Xing---EE30357 (Semiconductors II: Devices) 1 EE 30357: Semiconductors II: Devices Lecture Note #19 (02/27/09) MOS Field Effect Transistors Grace.

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

Short Channel Effects in MOSFET

Junction Capacitances The n + regions forms a number of planar pn-junctions with the surrounding p-type substrate numbered 1-5 on the diagram. Planar junctions.

Lecture 24a, Slide 1EECS40, Fall 2004Prof. White Lecture #24a OUTLINE Device isolation methods Electrical contacts to Si Mask layout conventions Process.

Field Effect Transistors

ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.

Lecture 23 OUTLINE The MOSFET (cont’d) Drain-induced effects Source/drain structure CMOS technology Reading: Pierret 19.1,19.2; Hu 6.10, 7.3 Optional Reading:

Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent.

Field Effect Transistors (1) Dr. Wojciech Jadwisienczak EE314.

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

CHAPTER 5 FIELD EFFECT TRANSISTORS(part c) (FETs).

Field Effect Transistor (FET)

Farzana R. ZakiCSE 177/ EEE 1771 Lecture – 19. Farzana R. ZakiCSE 177/ EEE 1772 MOSFET Construction & operation of Depletion type MOSFET Plotting transfer.

The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.

ECE 333 Linear Electronics

Field Effect Transistors

EE130/230A Discussion 10 Peng Zheng.

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

CMOS VLSI Design 4th Ed. EEL 6167: VLSI Design Wujie Wen, Assistant Professor Department of ECE Lecture 3A: CMOs Transistor Theory Slides adapted from.

Microelectronic Circuit Design McGraw-Hill Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Intro to Semiconductors and p-n junction devices

INTRODUCTION: MD. SHAFIQUL ISLAM ROLL: REGI:

Reading: Finish Chapter 17,

Optional Reading: Pierret 4; Hu 3

Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si

Reading: Finish Chapter 19.2

Short channel effects Zewei Ding.

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Lecture #15 OUTLINE Diode analysis and applications continued

Reading (Rabaey et al.): Sections 3.5, 5.6

Presentation transcript:

Spring 2007EE130 Lecture 43, Slide 1 Lecture #43 OUTLINE Short-channel MOSFET (reprise) SOI technology Reading: Finish Chapter 19.2

Spring 2007EE130 Lecture 43, Slide 2 Short-Channel MOSFET I DS does not saturate with increasing V DS due to DIBL, and also channel-length modulation for V DS >V GS -V T OUTPUT CHARACTERISTICSTRANSFER CHARACTERISTICS

Spring 2007EE130 Lecture 43, Slide 3 Silicon on Insulator (SOI) Technology Transistors are fabricated in a thin single-crystal Si layer on top of an electrically insulating layer of SiO 2 Simpler device isolation  savings in circuit layout area Low junction capacitances  faster circuit operation Better soft-error immunity No body effect  Higher cost T SOI

Spring 2007EE130 Lecture 43, Slide 4 Partially Depleted SOI (PD-SOI) Floating body effect (history dependent): 1.When a PD-SOI NMOSFET is in the ON state, at moderate-to-high V DS, holes are generated via impact ionization near the drain 2.Holes are swept into the neutral body, collecting at the source junction 3.The body-source pn junction is forward biased 4.  V T is lowered  I Dsat increases  “kink” in output I D vs. V DS curve

Spring 2007EE130 Lecture 43, Slide 5 Fully Depleted SOI (FD-SOI) No floating body effect! V T is sensitive to SOI film thickness Poorer control of short-channel effects due to fringing electric field from drain Elevated S/D contact structure needed to reduce R S, R D Silicon Substrate SourceDrain SiO 2 SOI Gate