XYZ 6/10/2015 Fabricated Arrays Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-0888-A 10 nm 1 μm 1.5 μm 68.5 nm 2 μm 1 μm 2 μm InP Substrate p + InP n-InP avalanche InP field stop n-InP absorber n + -InP cap n + -InGaAs contact Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-0889-A 10 nm 1 μm 1.5 μm 53.5 nm 3 μm 1 μm 2 μm InP Substrate p + InP n-InP avalanche InP field stop n-InP absorber n + -InP cap n + -InGaAs contact Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-0890-A 10 nm 1 μm 1.5 μm 53.5 nm 2 μm 1 μm 2 μm InP Substrate p + InP n-InP avalanche InP field stop n-InGaAs absorber n + -InP cap n + -InGaAs contact n- InGaAsP grading n<5e nm Si>2e18 n<5e15 Si:3.3e17 nid Zn:8e17 Zn:2e18 CCS-1061-A 10 nm 1 μm 1.5 μm 61.5 nm 2 μm 1 μm 2 μm InP Substrate p + InP n-InP avalanche InP field stop n-InP absorber n + -InP cap n + -InGaAs contact

XYZ 6/10/2015 Room Temperature Probe Data

XYZ 6/10/2015 Estimate Based on Asynchronus Data Current Board had some fundamental problem which cannot be resolved. Estimates based on previously measured 77 K discrete devices and room temp arrays: –DCR < 1 Hz at 77K –PDE ~ 30% over array –Fill Factor ~ 75 % with µlens A1*e -λ1t + A2*e -λ2t λ1=51.3 λ2=8.02