1. Fabricated Arrays CCS-0888-A CCS-0889-A CCS-0890-A CCS-1061-A
Si>2e18
n<5e15
Si:3.3e17
nid
Zn:8e17
Zn:2e18
CCS-0888-A
10 nm
1 μm
1.5 μm
68.5 nm
2 μm
InP Substrate
p+ InP
n-InP avalanche
InP field stop
n-InP absorber
n+ -InP cap
n+ -InGaAs contact
Si>2e18
n<5e15
Si:3.3e17
nid
Zn:8e17
Zn:2e18
CCS-0889-A
10 nm
1 μm
1.5 μm
53.5 nm
3 μm
2 μm
InP Substrate
p+ InP
n-InP avalanche
InP field stop
n-InP absorber
n+ -InP cap
n+ -InGaAs contact
Si>2e18
n<5e15
Si:3.3e17
nid
Zn:8e17
Zn:2e18
CCS-0890-A
10 nm
1 μm
1.5 μm
53.5 nm
2 μm
InP Substrate
p+ InP
n-InP avalanche
InP field stop
n-InGaAs absorber
n+ -InP cap
n+ -InGaAs contact
n- InGaAsP grading
100 nm
Si>2e18
n<5e15
Si:3.3e17
nid
Zn:8e17
Zn:2e18
CCS-1061-A
10 nm
1 μm
1.5 μm
61.5 nm
2 μm
InP Substrate
p+ InP
n-InP avalanche
InP field stop
n-InP absorber
n+ -InP cap
n+ -InGaAs contact

2. Room Temperature Probe Data

3. Estimate Based on Asynchronus Data
Current Board had some fundamental problem which cannot be resolved.
Estimates based on previously measured 77 K discrete devices and room temp arrays:
DCR < 1 Hz at 77K
PDE ~ 30% over array
Fill Factor ~ 75 % with µlens
A1*e-λ1t + A2*e-λ2t
λ1=51.3
λ2=8.02