1. Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

2. /9 Summary In the last week, I was working on the Ni-InGaAs diffusion study. Three batch of InGaAs Fin samples were fabricated for temperature & time dependent diffusion study. For one batch of samples, the fins were not fabricated well. For other two batch of samples, we realized that the time dependent diffusion study was not quite consistent due to the mask design and EBL alignment. So we decided to modify the design and start a new batch of three samples. 2

3. /9 Process of Ni-InGaAs Diffusion Study 3 Anneal TempFin WidthTime Sequence 220’C 20nm, 40nm, 60nm, 80nm, 100nm, 150nm, 200nm, 500nm 10min, 20min, 30min, 40min, 60min,80min 250’C (repeat) 5min, 10min, 20min, 40min, 60min, 80min 280’C 2min, 3min, 4min, 5min, 8min, 10min Diffusion

4. /9 Existing Problem 4 1. One batch of samples were not written well 2. EBL writing time is extremely long 3. EBL offset leads to non-consistent of time dependent annealing study

5. /95 Previous Design Modification of Mask Design Modified Design Fin width: 30nm, 40nm, 50nm, 60nm, 80nm, 100nm, 150nm, 200nm, 300nm, 500nm

6. /96 280’C 4min anneal test (on Si holder) [100] orientation [110] orientation Backscattering Detector

7. /97 280’C 4min (on SiC holder) 280’C 20min (on SiC holder) 280’C 60min (on SiC holder)

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9. /9 Plan 1.Continue to finish the new batch of Ni-InGaAs samples -- with the new design of mask, writing with fin layer first 2.Fabricate new set of neural probe samples (Ti/Ni/Ti/Ni = 30/200/30/50 ) -- Finished PL and metal deposition -- Going to write the center pattern, and to do the bonding 3.Ni Dots writing for previous batch of samples -- will receive the samples this morning 9

10. /9 Thank you Q&A 10