Automotive MOSFETs in Novel WideLead Package PRESS RELEASE Automotive MOSFETs in Novel WideLead Package DATA SHEET The new WideLead TO-262 package design was inspired by the excellent performance of the ultra-low die free package resistance of the DirectFET® package and the limitations of the traditional TO-262 package. This new family of MOSFETs housed in IR’s novel WideLead package drastically lowers conduction losses and reduces self-heating in the leads while delivering high current to provide a robust and reliable solution for automotive applications. HI-RES GRAPHIC Automotive HOME PAGE WideLead Package Features Low lead resistance: lower conduction losses than a traditional TO-262 package Reduced self-heating in the leads; under identical test conditions at 60A DC, the lead temperature of the WideLead part was up to 39% cooler compared to a standard TO-262 package Higher current carrying capability for a given lead temperature the WideLead can carry over 30% more current resulting in increased current density High (240A) max package current rating 20% lower RDS(on) Advantages Designed for generic heavy load/high power through-hole applications requiring low on-state resistance (RDS(on)), Electric Power Steering and battery switches used in internal combustion engine (ICE) cars, and micro and full hybrid vehicles, the new automotive MOSFETs combine IR’s advanced silicon and state-of-the-art packaging technologies to offer significant performance improvements while being compatible with existing design standards. The new WideLead TO-262 through-hole package reduces lead resistance to less than half a milliohm, greatly reducing conduction losses and heating in the leads to deliver 30 percent more current carrying capability than a traditional TO-262 package for a given operating temperature. May 2011