1. High Temperature Devices Based Upon Silicon Carbide
Joshua Banister
4/7/17
The physical and chemical properties of silicon carbide makes it an ideal choice for the fabrication of wide band gap semiconductors. Electronic subsystems that require temperatures higher than 420℃ coupled with high power operation will include wide band gap devices. Examples of these devices are light emitters, aerospace devices, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates.

2. Outline General Info Device Benefits Intrinsic Carriers Video Summary
References
5 Concepts

3. General Info
High-temp devices operate at temperatures higher than 450 ℃
The combination of silicon and carbon allow for high temperatures and therefore higher performance in devices
Electrons in SiC require more energy to be pushed into the conduction band, which allows the material to withstand about 10 times the maximum of silicon
If temperatures become too high, it can result in p-n junction leakage and thermionic leakage

4. Devices
Used in hybrid vehicles to reduce the size of liquid cooling systems
Photovoltaic panels need inverters to convert the DC from AC electricity for the power grid
Other Popular wide band gap materials Some of the premier wide band gap devices materials:
Silicon carbide (SIC)
Aluminum nitride (AlN)
Gallium nitride (GaN)
Boron nitride (BN)
Diamond
Zinc selenium (ZnSe)

5. More Devices

6. Device Benefits Commercial availability of substrates
Ability to grow a thermal oxide for use as masks in processing device passivation layers and gate dielectrics
SiC’s wide bandgap also makes it more heat resistant than silicon
Silicon-based inverters lose 2 to 3 percent of their energy in photovoltaic panels. Inverters containing SiC diodes and transistors can cut that loss in half

7. Intrinsic Carriers
If intrinsic carriers density becomes comparable to dopant density, it can have negative effects on conductivity
The concentration of these carriers relies upon the temperature and band gap of the material, which can also have effects on a material's conductivity

8. Video
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9. Summary & Conclusions
SiC is a significantly better choice than regular silicon due to a higher quantity of electrons to be pushed into the conduction band
This allows a higher heat resistivity and allows devices to operate faster
It has the ability to grow a thermal oxide for use as masks in processing device passivation layers and gate dielectrics

10. References
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concentration
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11. 5 Key Concepts
High-temp devices operate at temperatures higher than 450 ℃
If temperatures become too high, it can result in p-n junction leakage
SiC allows a higher amount of electrons to be pushed into the conduction band
Has the ability to grow a thermal oxide for use as masks in processing device passivation layers and gate dielectrics
Intrinsic carrier concentration directly affect the conductivity