Project Proposal on "Device and nanotechnology".

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Presentation transcript:

Project Proposal on "Device and nanotechnology". submitted by B.Aswini N.Jeevitha IFET college of Engineering,Villupuram, Tamilnadu, India. 5/19/2018

Device and nanotechnology ANALYTICAL MODELING OF DUAL MATERIAL JUNCTIONLESS SURROUNDING – GATE TRANSISTOR IN HEMT By, B.ASWINI N.JEEVITHA

INTRODUCTION HEMT is a field effect transistor incorporating a junction between two materials with different band gaps as the channel. By using GaAs instead of Si, higher electron mobility is available and furthermore GaAs can be operated at higher temperatures. Since no diffusions are involved in close geometrical tolerances can be achieved and the MOSFET can be made very small.

DUAL MATERIAL JUNCTIONLESS SURROUNDING GATE TRANSISTOR METAL 1 METAL 2 Source Drain

Energy level diagram

DUAL MATERIAL JUNCTIONLESS SURROUNDING GATE TRANSISTOR In dual material junction-less surrounding gate transistor, we are reducing the size of the transistor and we get the junctionless transistor. To overcome that we are changing MOSFET into cylindrical shape. Mobility of electrons will be reduced in this process.

DUAL MATERIAL JUNCTIONLESS SURROUNDING GATE TRANSISTOR IN HEMT The High Electron Mobility Transistor (HEMT) is an important device for high speed, high frequency, digital circuits and microwave circuits with low noise Applications.

ENERGY LEVEL DIAGRAM FOR HEMT

CONCLUSION HEMT will contains many layers. As like a MOSFET we have to change HEMT into cylindrical shape. By changing the HEMT there will be increase in electron mobility. Due to high electron mobility there will be high current flow.