© 2000 Prentice Hall Inc. Figure 5.1 n-Channel enhancement MOSFET showing channel length L and channel width W.

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Presentation transcript:

© 2000 Prentice Hall Inc. Figure 5.1 n-Channel enhancement MOSFET showing channel length L and channel width W.

© 2000 Prentice Hall Inc. Figure 5.2 Circuit symbol for an enhancement-mode n-channel MOSFET.

© 2000 Prentice Hall Inc. Figure 5.3 For v GS < V to the pn junction between drain and body is reverse biased and i D =0.

© 2000 Prentice Hall Inc. Figure 5.4 For v GS >V to a channel of n-type material is induced in the region under the gate. As v GS increases, the channel becomes thicker. For small values of v DS,i D is proportional to v DS. The device behaves as a resistor whose value depends on v GS.

© 2000 Prentice Hall Inc. Figure 5.5 As v DS increases, the channel pinches down at the drain end and i D increases more slowly. Finally for v DS > v GS -V to, i D becomes constant.

© 2000 Prentice Hall Inc. Figure 5.6 Characteristic curves for an NMOS transistor.

© 2000 Prentice Hall Inc. Figure 5.7 This circuit can be used to plot drain characteristics.

© 2000 Prentice Hall Inc. Figure 5.11 Drain characteristics for Example 5.2.

© 2000 Prentice Hall Inc. Figure 5.12 Diodes protect the oxide layer from destruction by static electric charge.

© 2000 Prentice Hall Inc. Figure 5.13 Simple NMOS amplifier circuit.

© 2000 Prentice Hall Inc. Figure 5.14 Drain characteristics and load line for the circuit of Figure 5.13.

© 2000 Prentice Hall Inc. Figure 5.15 v DS versus time for the circuit of Figure 5.13.

© 2000 Prentice Hall Inc. Figure 5.16 Fixed- plus self-bias circuit.

© 2000 Prentice Hall Inc. Figure 5.17 Graphical solution of Equations (5.17) and (5.18).

© 2000 Prentice Hall Inc. Figure 5.18 Fixed- plus self-biased circuit of Example 5.3.

© 2000 Prentice Hall Inc. Figure 5.20 The more nearly horizontal bias line results in less change in the Q-point.

© 2000 Prentice Hall Inc. Figure 5.21 Illustration of the terms in Equation (5.20).

© 2000 Prentice Hall Inc. Figure 5.22 Small-signal equivalent circuit for FETs.

© 2000 Prentice Hall Inc. Figure 5.23 FET small-signal equivalent circuit that accounts for the dependence of i D on v DS.

© 2000 Prentice Hall Inc. Figure 5.24 Determination of g m and r d. See Example 5.5.

© 2000 Prentice Hall Inc. Figure 5.25 Common-source amplifier.

© 2000 Prentice Hall Inc. Figure 5.26 Small-signal equivalent circuit for the common-source amplifier.

© 2000 Prentice Hall Inc. Figure 5.27 Circuit used to find $R_o$.

© 2000 Prentice Hall Inc. Figure 5.28 Common-source amplifier.

© 2000 Prentice Hall Inc. Figure 5.31 v o (t) and v in (t) versus time for the common-source amplifier of Figure 5.28.

© 2000 Prentice Hall Inc. Figure 5.32 Gain magnitude versus frequency for the common-source amplifier of Figure 5.28.

© 2000 Prentice Hall Inc. Figure 5.33 Source follower.

© 2000 Prentice Hall Inc. Figure 5.34 Small-signal ac equivalent circuit for the source follower.

© 2000 Prentice Hall Inc. Figure 5.35 Equivalent circuit used to find the output resistance of the source follower.

© 2000 Prentice Hall Inc. Figure 5.36 Common-gate amplifier.

© 2000 Prentice Hall Inc. Figure 5.37 See Exercise 5.12.

© 2000 Prentice Hall Inc. Figure 5.38 n-Channel JFET.

© 2000 Prentice Hall Inc. Figure 5.39 The nonconductive depletion region becomes thicker with increased reverse bias. (Note: The two gate regions of each FET are connected to each other.)

© 2000 Prentice Hall Inc. Figure 5.40 Circuit for the discussion of drain characteristics of the n-channel JFET.

© 2000 Prentice Hall Inc. Figure 5.41 Drain current versus drain-to-source voltage for zero gate-to-source voltage.

© 2000 Prentice Hall Inc. Figure 5.42 n-Channel FET for v GS = 0.

© 2000 Prentice Hall Inc. Figure 5.43 Typical drain characteristics of an n-channel JFET.

© 2000 Prentice Hall Inc. Figure 5.44 If v DG exceeds the breakdown voltage V B, drain current increases rapidly.

© 2000 Prentice Hall Inc. Figure 5.45 See Exercise 5.14.

© 2000 Prentice Hall Inc. Figure 5.46 n-Channel depletion MOSFET.

© 2000 Prentice Hall Inc. Figure 5.47 Drain current versus v GS in the saturation region for n-channel devices.

© 2000 Prentice Hall Inc. Figure 5.48 p-Channel FET circuit symbols. These are the same as the circuit symbols for n-channel devices, except for the directions of the arrowheads.

© 2000 Prentice Hall Inc. Figure 5.49 Drain current versus v GS for several types of FETs. i D is referenced into the drain terminal for n-channel devices and out of the drain for p-channel devices.