1. Module 3: Part 1 The Field-Effect Transistor (FET)

2. Learning Objectives After studying this module, the reader should have the ability to: n Understand and describe the general operation of n-channel and p- channel enhancement-mode and depletion-mode MOSFETs. n Understand the meaning of the various transistor parameters, including threshold voltage, width-to-length ratio, and drain-to-source saturation voltage. n Apply the ideal current-voltage relations in the dc analysis and design of various MOSFET circuits using any of the four basic MOSFETs. n Understand how MOSFETs can be used in place of resistor load devices to create all-MOSFET circuits. n Qualitatively understand how MOSFETs can be used to switch currents and voltages to perform digital logic functions, and to amplify time-varying signals. n Understand the general operation and characteristics of junction FETs.

4. (a) An NMOS common-source circuit and (b) the NMOS circuit for Example 5.3

5. (a) A PMOS common-source circuit, (b) results when saturation-region bias assumption is incorrect, and (c) results when non-saturation-region bias assumption is correct

6. Transistor characteristics, v DS (sat) curve, load line, and Q-point for the NMOS common-course circuit in Figure 5.24 (b)

8. NMOS common-source circuit with source resistor

9. Circuit with enhancement load devices and NMOS driver

10. Voltage transfer characteristics of NMOS inverter with enhancement load device

11. (a) Depletion-mode NMOS device with the gate connected to the source and (b) current-voltage characteristics

12. Circuit with depletion load device and NMOS driver

13. Voltage transfer characteristics of NMOS inverter with depletion load device

14. (a) An NMOS common-source circuit with a time-varying signal coupled to the gate and (b) transistor characteristics, load line, and superimposed sinusoidal signals