EMT362: Microelectronic Fabrication Interlevel Dielectric Technology

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Presentation transcript:

EMT362: Microelectronic Fabrication Interlevel Dielectric Technology Ramzan Mat Ayub; SATF 2005 EMT362: Microelectronic Fabrication Interlevel Dielectric Technology

Ramzan Mat Ayub; SATF 2005 Lecture Objectives Able to describe the main dielectric materials used in PMD and IMD Able to describe the main planarization techniques used in MOS fabrication.

FOUR MAIN CHALLENGES IN MULTILEVEL INTERCONNECT Ramzan Mat Ayub; SATF 2005 FOUR MAIN CHALLENGES IN MULTILEVEL INTERCONNECT PLANARIZATION OF INTERLEVEL DIELECTRIC LOW-K DIELECTRIC MATERIALS FILLING OF HIGH ASPECT RATIO CONTACT HOLES AND VIAS INTERGRATION OF MANY TYPES OF CONDUCTOR AND DIELECTRIC MATERIALS

TERMINOLOGY PASSIVATION METAL-2 VIA-1 METAL-1 PMD IMD OR ILD-1 CONTACT Ramzan Mat Ayub; SATF 2005 TERMINOLOGY PASSIVATION METAL-2 VIA-1 METAL-1 PMD IMD OR ILD-1 CONTACT

REQUIREMENTS OF DIELECTRIC LAYERS Ramzan Mat Ayub; SATF 2005 REQUIREMENTS OF DIELECTRIC LAYERS DIELECTRIC LAYERS MUST BE USED TO ELECTRICALLY ISOLATE ONE LEVEL OF CONDUCTOR FROM ANOTHER IN MULTI LEVEL INTERCONNECT SYSTEMS. LOW K TO KEEP CAPACITANCE BETWEEN METAL LINES LOW HIGH BREAKDOWN ( > 5 MV / cm) NO MOISTURE ABSORPTION GOOD ADHESION TO ALUMINUM STABLE AT TEMPERATURES OF ~ 500 C GOOD CONFORMALITY (STEP COVERAGE) GOOD THICKNESS UNIFORMITY EASILY ETCHED

DIELECTRIC MATERIALS FOR PMD Ramzan Mat Ayub; SATF 2005 DIELECTRIC MATERIALS FOR PMD DOPED SIO2 FILMS BY CVD TECHNIQUE SILANE / TEOS BASED B(3-5%)P(3-5%)SG MOSTLY USED DIELECTRIC FOR PMD. REFLOW TEMPERATURE OF <850 C CAN BE ACHIEVED. IN SUB-MICRON CMOS PROCESS, TEOS BASED CVD OXIDE IS MORE WIDELY USED COMPARED TO THAT OF THE SILANE BASED. TYPICAL PMD USG (UNDOPED SIO2) – TO ACT AS A BARRIER TO THE B & P OUT DIFFUSION BPSG – EASY TO REFLOW AT LOW TEMPERATURE.

Ramzan Mat Ayub; SATF 2005 BPSG B P USG

Ramzan Mat Ayub; SATF 2005

DIELECTRIC MATERIALS FOR IMD Ramzan Mat Ayub; SATF 2005 DIELECTRIC MATERIALS FOR IMD DOPED SILANE / TEOS BASED SIO2 FILMS PHOSPHORUS IS ADDED TO; REDUCE FILM STRESS MORE RESISTANCE TO WATER SODIUM GETTERING CURRENTLY, TEOS BASED FILMS ARE FAVOURABLE DUE TO; LOWER DEPOSITION TEMPERATURE (< 400C) BETTER GAP FILLING CAPABILITY (BETTER CONFORMALITY) .

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Ramzan Mat Ayub; SATF 2005 VOID

Ramzan Mat Ayub; SATF 2005 IMD FOR SILANE / TEOS BASED DIELECTRIC FILMS – MIMOS 0.5UM 1-P 2-M PROCESS

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Silane oxide (3000A) or Silane Nitride Ramzan Mat Ayub; SATF 2005 IMD FOR SILANE / TEOS BASED DIELECTRIC FILMS – MIMOS 0.5UM 1-P 2-M PROCESS TEOS-02 (4000A) SOG (1500A) TEOS - O3 oxide (4000A) Silane oxide (3000A) or Silane Nitride Barrier for moisture and sodium ion

PLANARIZATION OF INTERLEVEL DIELECTRIC FILMS Ramzan Mat Ayub; SATF 2005 PLANARIZATION OF INTERLEVEL DIELECTRIC FILMS IMD ti METAL No planarization tf IMD Smoothing METAL IMD Smoothing & partial planarization METAL

Complete local planarization Ramzan Mat Ayub; SATF 2005 IMD METAL Complete local planarization IMD METAL Complete global planarization Planarization factor, β = 1 – (tf / ti) β = 1, complete planarization β = 0, no planarization

Ramzan Mat Ayub; SATF 2005

Ramzan Mat Ayub; SATF 2005

PROBLEM ASSOCIATED WITH POOR PLANARIZATION Ramzan Mat Ayub; SATF 2005 PROBLEM ASSOCIATED WITH POOR PLANARIZATION 1. Poor metal step coverage with result in metal thinning higher resistance open problem

IMD 2. Metal stringers after metal etch. Ramzan Mat Ayub; SATF 2005 2. Metal stringers after metal etch. 3. DOF limititation for optical lithography – patterning problem MASK DOF < 5um IMD PR METAL

PLANARIZATION TECHNIQUES Ramzan Mat Ayub; SATF 2005 PLANARIZATION TECHNIQUES 1. Thermal flow (only for PMD)

Ramzan Mat Ayub; SATF 2005 As deposited After reflow

2. TEOS oxide deposit,etch-back and deposit Ramzan Mat Ayub; SATF 2005 2. TEOS oxide deposit,etch-back and deposit

3. SOG deposit,etch-back and Oxide deposition Ramzan Mat Ayub; SATF 2005 3. SOG deposit,etch-back and Oxide deposition

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4. Oxide deposition, CMP oxide Ramzan Mat Ayub; SATF 2005 4. Oxide deposition, CMP oxide

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Ramzan Mat Ayub; SATF 2005

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Ramzan Mat Ayub; SATF 2005