Valery Ray Particle Beam Systems & Technology, Methuen, USA High-Throughput Milling of HAR Vias with Concentrated Gas Delivery.

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Presentation transcript:

Valery Ray Particle Beam Systems & Technology, Methuen, USA High-Throughput Milling of HAR Vias with Concentrated Gas Delivery PBS&T 9 th European FIB User Group Meeting EFUG 2005 Arcachon, France

11/20/2015 EFUG 2005, Arcachon, France2 Concepts of Concentrated Gas Delivery Commercial Shroud concentrator, or “Beehive” “Cupola” concentrator

11/20/2015 EFUG 2005, Arcachon, France3 Imaging through Shroud Concentrator: FOV 20, 5.8pA Beam, Dielectric Sample Images taken through Shroud gas concentrator (left) have lower S/N then images taken with Penta nozzle (right).

11/20/2015 EFUG 2005, Arcachon, France4 Main Chamber Vacuum as Function of Process Gas Pressure with Concentrator Factor of ~35 pressure reduction in main chamber of FIB system CCIG, Torr

11/20/2015 EFUG 2005, Arcachon, France5 Rate Comparison: SiO 2 Milling with XeF 2, Penta (2 Torr) vs. Shroud (0.8 Torr) Dose, nC Time, mm:ss Mill box, µm Factor ~ 3.5 throughput enhancement

11/20/2015 EFUG 2005, Arcachon, France6 Endpointing with Gas Concentrator: Secondary Electron Signal Secondary electron endpoint of 5µm deep via made by 0.3x0.3µm mill box, 5.8 pA beam current, and 0.8 Torr XeF 2 gas pressure, shroud gas concentrator. 0V bias 2V bias

11/20/2015 EFUG 2005, Arcachon, France7 Endpointing with Gas Concentrator: Sample Absorbed Current Stage current endpoint of 5µm deep via made by 0.3x0.3µm mill box, 5.8 pA beam current, and 0.8 Torr gas pressure.

11/20/2015 EFUG 2005, Arcachon, France8 Indirect Comparison of Via Profile: Penta vs. Shroud (Beehive) FOV 5µm Vias milled by Beehive are expected to have straighter profile then vias milled by Penta

11/20/2015 EFUG 2005, Arcachon, France9 Summary  Concentrated gas delivery is viable for milling of access vias in FIB Circuit Edit.  Provides enhanced throughput and reduced pressure in main chamber.  Endpoint is reliable with sample absorbed current and secondary electrons.