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College of Nanoscale Science & Engineering By: Elroy Tatem Advisors: Dr. Cherrice Traver Dr. Bradley Thiel (U Albany) Modeling of Dynamic Secondary Electron.

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Presentation on theme: "College of Nanoscale Science & Engineering By: Elroy Tatem Advisors: Dr. Cherrice Traver Dr. Bradley Thiel (U Albany) Modeling of Dynamic Secondary Electron."— Presentation transcript:

1 College of Nanoscale Science & Engineering By: Elroy Tatem Advisors: Dr. Cherrice Traver Dr. Bradley Thiel (U Albany) Modeling of Dynamic Secondary Electron Contrasts in SEM specimens

2 College of Nanoscale Science & Engineering What is an SEM  Electromagnetic fields act as lenses which direct and focus a beam of electrons  These electrons excite the surface of the sample and cause it to emit electrons  The electrons are detected by built in circuitry and sent to the monitor

3 College of Nanoscale Science & Engineering What is an SEM (continued)  Specimens have to be specially prepared. Specimens must be coated in a conductive substance, which makes characterization of insulators, semiconductors, and living samples difficult  Specimens can be viewed without this preparation in newer SEMs and ESEMs, which use low vacuum and ion gas to counteract the effects of charging

4 College of Nanoscale Science & Engineering Project Goals  Improve current circuit model for charging in poorly conducting specimens in an SEM  Quantify the effects of charging in poorly conducting specimens in an SEM  Model the charging phenomenon in a Microsoft™ EXCEL® program.

5 College of Nanoscale Science & Engineering Charging Effects  “Artifacts” Show up as unwanted contrasts in the image produced by the SEM Can be random or have a pattern Sometimes repeatable Caused by excessive negative charge build up on a sample.

6 College of Nanoscale Science & Engineering Charging Effects Sample/ Surface interaction Secondary emission energy vs. Initial beam energy

7 College of Nanoscale Science & Engineering Charging Effects dielectric (SiO 2 ) Cu pads Cu pad close-up showing SiO 2 surface structure

8 College of Nanoscale Science & Engineering Charge Density  Charge density as a function of time is comparable to F

9 College of Nanoscale Science & Engineering Circuit Model  The first draft was made such that it would retain its RC properties  The output should be dampened depending on how much charge has collected on the sample surface

10 College of Nanoscale Science & Engineering Circuit Model  RC Circuit  Constant multiplier  Common emitter amplifier  Signal multiplier amplifier

11 College of Nanoscale Science & Engineering Circuit Model  The second circuit discarded the MOSFET multiplier as it would have required a voltage- current transformation  The second multipliers are controlled by a potentiometer which simulates the ion flux

12 College of Nanoscale Science & Engineering Excel Program  The program is able to model the phenomenon by allowing the user to input specific microscope and specimen parameters  Inputs Current Magnification Frame Rate Dwell Time Area Initial beam intensity Resistivity/permittivity (bulk)

13 College of Nanoscale Science & Engineering Excel Program  The program returns valuable information to the user  Outputs ∑σi(t) - Charge surface density per unit of time δ(E) - Ratio of input current to output current (ISE/IBE) ∫δ(E) – Area under charging curve

14 College of Nanoscale Science & Engineering Results: Circuit Model  The potentiometer models the way that the newer ESEMs use ions to affect the charging that takes place.  Red = RC model output  Orange = Controlled charge output

15 College of Nanoscale Science & Engineering Results: Excel Model Curren t (a) Magnifi cation (x) Area (cm 2 ) Frame Rate (s) EoEo dwell time σbσb δ(E) initial KnbinVo(eV)pi 6.00E- 07 2.00E+ 01 1.00E+ 02 0.5 1.88E- 07 5.00E- 05 1.20E- 06 0.5 6.25E+ 02 0.72 1.00E- 08 2.00E+ 04 3.1415 93 ηε Frame s 6.40E+ 02 3.210 Charge graph σ(t) δ(E)potential build up 1.2435 2E-07 0.0082 84339 59462 24.118 δ integrated per frame 8.4451 3E-08 1.2892 2E-07 1.5444 9E-07 1.6991 E-07 1.7996 E-07 1.8691 E-07 1.9198 4E-07 1.958E -07 1.99E- 07 2.01E- 07 04.16E-07 2.69E- 07 1.2E-144.16E-07 2.69E- 07 3.6E-144.155E-07 2.68E- 07 7.2E-144.155E-07 2.68E- 07 1.2E-134.155E-07 2.68E- 07 1.8E-134.155E-07 2.68E- 07 2.5E-134.155E-07 2.68E- 07 3.4E-134.155E-07 2.68E- 07 4.4E-134.155E-07 2.68E- 07 5.4E-134.155E-07 2.68E- 07 6.7E-134.155E-07 2.68E- 07 8E-134.155E-07 2.68E- 07

16 College of Nanoscale Science & Engineering Results: Excel Program  The curve is extended between the charging time and just before the discharging takes place to emphasize the charging curve  The value of ∫δ(E) reaches a maximum value which restricts any excess charging on the sample

17 College of Nanoscale Science & Engineering Future Plans  Improve model Replace the potentiometer with an equivalent circuit Calculate specific values for inputs Test inputs against  Make program more useable Cosmetic additions  Other platforms

18 College of Nanoscale Science & Engineering References  SEM Movie – Oxford instruments  Transistor Image – CNSE Metrology Dept  Charge Density Pictures – Charging Effects in Scanning Electron Microscopy – Shaffner  Excel - Microsoft Corporation  Multisim - Electronics Workbench Corporation.

19 College of Nanoscale Science & Engineering Questions?


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