1. An Inductively Coupled Plasma Etcher
Corial 200IL
An Inductively Coupled Plasma Etcher
For Compound Semiconductors

2. Corial 200IL

3. Equipment Control & Software
COSMA Software with:
Edit menu for process recipe edition,
Adjust menu for process optimizing,
Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network).
CORS Software for:
Data reprocessing (Measures and data comparison).

4. A Tool Organized in Successive Levels
Actions
Constructor
Lots
Process
Closed-loop
Server for GUI
COSMA Supervisor
Embedded control PU
Embedded control function
COSMA Controller
Process Controller
Device Controllers
Physical devices
Operator
Remote GUI
PC User
Monitoring

5. Diagram Modes Stand-by Mode Production Optimization Constructor
Errors
Stand-by
Mode
Step by step
Production
Optimization
Constructor
Shut down
Operator
Production
Normal
Maintenance
Constructor

6. A Communicant Tool Firewall WAN VPN ADSL Fix IP Dedicated
Ethernet network
COSMA Supervisor
COSMA
GUI
Customer Ethernet Network
Process Control Unit (1)
Process Control Unit (2)
Device Control (1)
Ethernet
Device Control (2)

7. System ICP Matching network ICP Reactor Load-lock Electronic Control
RF Generator
ICP Generator
Electronic Control
TMP Control
ICP Reactor
HT/BT Power Supplies

8. System Load-lock ICP Matching network ICP Reactor Matching Network
TMP
Throttle Valve
Matching Network
Lift
ICP Reactor
ICP Matching network
Gas box
Load-lock

9. Gate valve for quick reactor venting and cleaning
Pumping System
Reactor
Load-lock
Load-Lock Valve
Gate valve for quick reactor venting and cleaning TV
TMP
Dry Pump
ADP 122

10. Reactor Features (1)
New Inductively Coupled Plasma source with hot walls to reduce polymer condensation and to enhance plasma cleaning It produces High Density Plasma in a wide working pressure range (5 to 100 mT) for fast etching of up to Ø200 mm wafers,
Helium assisted heat exchange between cathode, shuttle and wafer with mechanical clamping to maintain wafer temperature below 100°C,
Numerous plasma modes accessible in the same process:
Inductively Coupled Plasma + RF biasing
Reactive Ion Etching
Inductively Coupled Plasma for low damage etching.

11. Reactor Features (2) Reactor with hot walls enables:
Highly selective processes,
Low contamination of the process chamber.
Low plasma potential (< 25 Volts) and automatic self bias regulation giving rise to precise control of ion energy enables (≤ 40 eV):
Low damage etching with no RF biasing,
Isotropic etching with low RF biasing,
Anisotropic etching with high RF biasing.

12. Electron density : 1011 to 1012 e/cm3
ICP Source
Electron density : 1011 to 1012 e/cm3
PLASMA
Match Box
RF generator at 2 MHz

13. ICP Reactor Design
2 MHz Match Box
Reactor
Laser window

14. ICP Reactor Design Match Box Ø280 mm coil Laser window
Gas shower (Thermally isolated)
Quartz tube

15. ICP Reactor Design Shielding Quartz tube Water cooled coil
(Thermally isolated)
Quartz tube
(Thermally isolated)
Water cooled coil
The reactor walls are thermally isolated. They are getting hot during plasma etching. This strongly reduces the polymer condensation and the cross contamination between different processes.

16. Loading
Loading tool
Shuttle
Cathode

17. Loading
Loading tool
Shuttle
Cathode

18. Clamping
Shuttle
Cathode
Loading tool

19. Cooling
Shuttle
Cathode
Loading tool
Helium

20. Etching
PLASMA
Shuttle
Cathode
Loading tool
Helium

21. End of Etching
Shuttle
Cathode
Loading tool

22. Unloading
Loading tool
Shuttle
Cathode

23. Unloading
Loading tool
Shuttle
Cathode

24. Pression He en fonction du débit - He Pressure Versus He Flow Rate -
Example of Shuttle
Altymid Ring
Wafer
O’ Ring
Base Plate
Graphite Plate
Pression He en fonction du débit
- He Pressure Versus He Flow Rate - 5 10 15 20 25
Débit He - He Flow Rate - (sccm)
Pression He (Torrs)
- He Pressure -
He Pressure vs He Flow Rate
Work Area
Goal: Ensure wafer cooling
The shuttles are designed according to wafer size, number of wafers and process recipes for optimum process results. The use of dedicated shuttles according to process strongly reduces the cross contamination.

25. Precise Monitoring
The latest submicron technology needs precise monitoring:
Automatic endpoint detection,
CCD camera with magnification > 120 X,
Laser beam diameter ≤ 20 m.
A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

26. Laser Endpoint Detection
Time
Signal
Interferences
Photodiode
Laser beam
Reflected beam 1
Reflected beam 2
Interface 1
Underlayer
Interface 2
Refractive Index = n
Interferences lead to a periodic signal having a l/2n period versus time

27. Recap of Corial 200IL Features
New Inductively Coupled Plasma source with hot walls which reduces polymer condensation, enhances plasma cleaning, minimizes cross contamination. It produces High Density Plasma for uniform etching of films on batch of seven 2” wafers or wafer size up to 200 mm,
Low plasma potential (<25 Volts) and automatic self bias regulation to precisely control the ion energy,
Helium assisted heat exchange to maintain resist and device integrity,
Various shuttles to reduce cross contamination. They are designed to fit with wafers and processes recipes for the best process results,
Wide process range from isotropic to anisotropic and fast etch rate to low etch rate with very high selectivity,
Laser endpoint for precise process monitoring,
Capability of many etching modes from RIE, ICP + RIE and ICP in the same process recipe.