R. H. Richter - WHI Project Review Dec, 17th 2002 WHI - Project Review Halbleiterlabor (HLL) - Projects at HLL Overview (list of main projects) CCD Development for ROSITA SDD Application (art analysis) DEPFET pixels for TESLA and XEUS Requirements for vertex detectors Technology development, design, simulation, prototyping Comparison to other vertex detector concepts Summary

R. H. Richter - WHI Project Review Dec, 17th 2002 Projects at HLL (1) – High Energy Physics ATLAS SCT Strip detectors Requirements: Single sided strips (p in n), radiation hardness up to 3x10 14 n eq /cm² Concept (p in n), design, prototyping: HLL Production: Hamamatsu, CiS (Erfurt) Status: Series production (finished by Dec 2002), Acceptance tests at HLL ATLAS Pixel sensors Requirements: Pixel size 50x450 µm², extremely radiation hard, 1x10 15 n eq /cm²!! Concept, technology and design: HLL Production: CiS (Erfurt), Tesla (Czech Republic)? Status: Start of series production, HLL (support) Linear Collider (TESLA): Thin and fast Active Pixel Sensors (see below) CAST Start of development at HLL: 2002 End: 2005 Aim: Search for solar axions by use of an X-ray telescope equipped with PN-CCD (see talk by R. Kotthaus)

R. H. Richter - WHI Project Review Dec, 17th 2002 Projects at HLL (2) - Astrophysics XMM Launch of the satellite: 1999 Aim: Study of galactic and extragalactic X-ray sources Detector requirements: energy res., position res., time res. Instrument: PN-CCD ROSITA Start of the development: 2000 Scheduled Mission: Aim: Orbit scan 0.5~keV to 15~keV Instrument: Optimized PN-CCD with frame store region XEUS Start of the development: 1996 Scheduled start: 2015 Aim: See XMM. But increased sensitivity by a factor 200, improved angular resolution, extended energy range Instrument: Optimized PN-CCD with frame store region OR Active Pixel Detector (DEPFET)

R. H. Richter - WHI Project Review Dec, 17th 2002 ROSITA Modified Repetition of ABRIXAS Orbit scan: 0.5~keV to 15~keV To be installed on ISS Advanced PN-CCDs (separated image and storage areas) Prototypes produced in new laboratory

CDD Development for ROSITA and XEUS Fast transfer of signals into the frame store Slow (low noise) read out from the frame store Out of time event probability: 0.2% (factor 30 lower than at XMM)

Improvement of Charge Transfer Effciency (CTE) Charge transfer loss is by a factor of 13 smaller than that of the XMM-CCD No Titanium contamination in the new CCDs by using of HE-implantation instead of an epitaxial layer.

Low energy resolution Al-K line 76eV FWHM C-K line 82eV FWHM Achieved by an improved entrance window (use of instead of crystal orientation) and by a better electronic noise 3.5 e- rms (XMM: 4.5 e-)

R. H. Richter - WHI Project Review Dec, 17th 2002 Compact X-ray fluorescence spectrometer Manuscript: Faust I by Johann Wolfgang v. Goethe Investigated at Bundesanstalt für Materialprüfung From the composition of the ink they concluded that parts of Faust I were corrected at a time when Goethe already worked on Faust II. Röntec-Spectrometer equipped with a Silicon Drift Chamber

R. H. Richter - WHI Project Review Dec, 17th 2002 Silicon detectors for LC vertex detector (TESLA) Collaboration with Unversity of Bonn (N. Wermes) WHI-HLL: Sensor Bonn: Read out and steering chips Synergy with XEUS Project (MPE)

R. H. Richter - WHI Project Review Dec, 17th 2002 TESLA Vertexdetector LayerModule sizeNo. Of modules I13 x 100 mm1 x 8 II22 x 125 mm2 x 8 III22 x 125 mm2 x 12 IV22 x 125 mm2 x 16 V22 x 125 mm2 x 20 Total  500 MPixel (bei 25x25 µm Pixelgröße) (read out speed in 50 MHz) Options: CCD MAPS HAPS DEPFET

R. H. Richter - WHI Project Review Dec, 17th 2002 Detector requirements for LC high position resolution (vertex reconstruction, momentum resolution) low radiation length of inner layers low power consumption (500MPixel + cooling additional material not allowed) high readout out speed for background suppression radiation tolerant TESLA: pixel size (20-30 µm) 2 5(+)10/p sin 3/2 θ µm sensor thickness d=50µm  0.1% X 0 per layer  ( layer r=13mm ) DEPFET: P mean < 1W 300 K 50MHz, read out speed occupancy < 1% krad (5 years) 5 x 10 9 n eq /cm 2

R. H. Richter - WHI Project Review Dec, 17th 2002 Module concept with DEPFETs Sensor area thinned down to 50 µm Remaining frame for mechanical stability carrying readout and steering chips

R. H. Richter - WHI Project Review Dec, 17th 2002 DEPFET-Principle FET integrated on high ohmic n-bulk Collection of electrons within the internal gate Modulation of the FET current by the signal charge! Radiation ~1  m ~300  m Advantages: Amplification of the charge at the position of collection => no transfer loss Full bulk sensitivity Non structured thin entrance window (backside) Very low input capacitance => very low noise

R. H. Richter - WHI Project Review Dec, 17th 2002 ENC = 4.8 +/- 0.1 e K Excellent noise values measured on single pixels

BioScope - imaging of tracer-marked bio-medical samples (P. Klein and W. Neeser) Noise: ca K Slow operation (old technology) Large arrays are impossible (JFET => V P variations) Large cell size

R. H. Richter - WHI Project Review Dec, 17th 2002 Rectangular DEPFET pixel detector MOS transistor instead of JFET A pixel size of ca. 20 x 20 µm² is achievable using 3µm minimum feature size.

R. H. Richter - WHI Project Review Dec, 17th 2002 DEPFET pixel matrix - Read filled cells of a row - Clear the internal gates of the row completely - Read empty cells Low power consumption Fast random access to specific array regions

purpose detector format pixel size thickness noise readout time / detector / row particle tracking 1.3 x 10 cm² (x 8) 520 x 4000 pixels (x 8) 2.1 Mpix (x8) 25 µm 50 µm ~ 100 el. ENC 50 µsec 20 nsec imaging spectroscopy 7.68 x 7.68 cm² 1024 x 1024 pixels 1 Mpix 75 µm µm 4 el. ENC 1.2 msec 2.5 µsec

R. H. Richter - WHI Project Review Dec, 17th 2002 DEPFET 6” -Technology Double poly / double aluminum process on high ohmic n - substrate along p-channel perpendicular to channel (with clear)

R. H. Richter - WHI Project Review Dec, 17th 2002 Pixel prototype production (6“ wafer) for XEUS and LC (TESLA) Many test arrays - Circular and linear DEPFETS up to 128 x 128 pixels minimum pixel size about 30 x 30 µm² - variety of special test structures Aim: Select design options for an optimized array operation (no charge loss, high gain, low noise, good clear operation) On base of these results => production of full size sensors Production will be finished in spring

R. H. Richter - WHI Project Review Dec, 17th 2002 Potential during collection - 3D Poisson equation (Poseidon) (50µm thick Si, N B =10 13 cm -3,V Back =-20V) Potential during collection - 3D Poisson equation (Poseidon) (50µm thick Si, N B =10 13 cm -3,V Back =-20V) Depth 10µm Depth 7µmDepth 4µmDepth 1µm Sources Drain External (internal) Gates n+ clear contacts Cell size 36 x 27 µm²

R. H. Richter - WHI Project Review Dec, 17th 2002 Potential distribution during Reading Internal Gate Drain Source Back contact 2D dynamic simulation along the channel I D adjusted to 100µA (W/L =18µm/5µm) V internal Gate ca. 3V Localized charge generation simulates a hit

DEPFET simulation – TeSCA (2D, time dependent) hit response to a generation of 1600 electron-hole pairs

R. H. Richter - WHI Project Review Dec, 17th 2002 Current production status Pixel array section – Design with clockable clear gate Status: - Poly I and II ok - Implantations (N-Side) ok - P-Side Processing started 8 lithographic steps ready To do: - P-Side diode / entrance window - Contact openings - Metal 1 FS/BS => Measurements - Metal 2 4 / 6 mask steps until März `03 / Juni `03 Drain Gate Clear gate Source 1 Pixel cell

R. H. Richter - WHI Project Review Dec, 17th 2002 Crossing polysilicon lines Problems with demolished polysilicon lines and bad polyI/polyII insulation Solved now

R. H. Richter - WHI Project Review Dec, 17th 2002 Processing thin detectors - the Idea -

R. H. Richter - WHI Project Review Dec, 17th 2002 Detector thinning – first results Wafer bonding – MPI f. Festkörperstrukturphysik, Halle Wafer grinding – SICO GmbH, Jena Anisotropic etching – CiS gGmbH Erfurt, MPI Halbleiterlabor Munich Thickness of detector region : 50µm of frame : 350µm Size: 8cm x 1cm

R. H. Richter - WHI Project Review Dec, 17th 2002 Read out chip – test submission (Marcel Trimpl - Bonn) - fast current read out - TSMC 0,25 µm process (ca transistors) contains all important parts of the design 1,5mm 4 mm Measurements: Very encouring results with nearly TESLA requirements !

R. H. Richter - WHI Project Review Dec, 17th 2002 Performance estimation of TESLA vertex detector candidates Resolution 5(+)10/p sin 3/2 θ µm Material budget ≤ 0.1% X 0 /l. Read out Speed (50 MHz) Power consumpt. Radiation tolerance Ionisation, n Remarks CCD Similar as used in SLD 4.2(+)4.0/p sin 3/2 θ µm + R&D O? R&D !! ? +? R&D well- engineered product – enough Potential? HAPS Hybrid APS 7µm (-) Back up solution MAPS Monolith.APS CMOS Microelectr. 2µm (+++) But at 50MHz ? + R&D O? R&D !! + ? R&D Large area device Composition of dice ? DEPFET Like CCD + R&D +? R&D + +? R&D Be patient for 6-12 months

R. H. Richter - WHI Project Review Dec, 17th th EUROPEAN SYMPOSIUM ON SEMICONDUCTOR DETECTORS New Developments on Radiation Detectors took place at Schloss Elmau, June , 2002

R. H. Richter - WHI Project Review Dec, 17th 2002 Summary oOur part in ATLAS is almost done oFuture projects: LC (TESLA), ROSITA, XEUS – encouraging CCD results oDEPFET is promising detector candidate for future HE and astrophysics experiments. Key features: low noise, full bulk sensitivity, no charge transfer loss, low power consumption, random access within an array oA new DEPFET 6 inch technology (2 poly/ 2 aluminum) was developed for large arrays and high speed operation. oDEPFET Prototype production has been started and will be finished in spring ’03. oRead out electronic studies are very encouraging. oA concept for merging the DEPFET technology with a thinning technology is proposed. Plans for 2003: Measurement and analysis of the prototype production New Drift Chamber and CCD submissions