IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved IHP Technology Roadmap Update and Future Research Topics Bernd Tillack IHP Im Technologiepark Frankfurt (Oder ) MOS-AK Meeting, April 2-3, 2009

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved IHP Frankfurt (Oder) Founded Member of the Leibniz Association 1999: “Innovations for High Performance microelectronics” 1000 m² class 1 clean room, staff: ~ 250 co-workers 2009: Leibniz Institute 4 core competencies: Materials research, Si process technology, RF circuit design, wireless communication systems Funding 2008 Institutional funds: € 16 million Third-party funds: € 11.5 million ERDF funds: € 12.7 million ( European Regional Development Fund)

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Core Competencies Silicon based high-frequency technologies, circuits and systems for wireless and broadband communication System solutions for wireless and broadband communication Prototypes of mixed-signal ICs; system-on-chip RF circuit design Analog circuits in the higher GHz-range (frontends, converter..) Technology platform for wireless and broadband communication Performance increasing and functionality extending modules for standard CMOS New materials for microelectronics technology incl. integration (e.g. SiGe:C, high-K, nanostructures)

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Outline Technology Vision Future Research Topics Summary

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Technology Vision Develop High Value Added Technologies for Wireless and Broadband Applications

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Technology Vision CMOS Baseline Technology Modular extension of CMOS technologies SiGe:C HBTLDMOS Flash MemoriesPassive Devices

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved DevelopmentEarly accessQualified September 2008 Technology Roadmap for MPW * Qual. on customer request

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved IHP‘s Technology Focus: More than Moore Source: ITRS Roadmap 2005 IHP: 0.13 µm BiCMOS THz Devices Si Photonics MEMS

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Technology Vision – Future Research Topics CMOS Baseline Technology Modular extension of CMOS technologies – Diversification SiGe:C HBTLDMOS Flash MemoriesPassive Devices THz Devices HBTs

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved THZ HBTs

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved DOTFIVE Project Timeframe 3-year (2/08-1/11) IP project of 7 th Framework Program Target 0.5 THz SiGe Heterojunction Bipolar Transistor For the future development of communication, imaging and radar applications Consortium 15 partners from industry and academia in 5 countries ST, Infineon, IMEC, IHP, XMOD, GWT-TUD, ENSEIRB, Bunderwehr Uni. Munich, Univ. of Neaples, Univ. of Linz, Univ. of Siegen, Univ. of Wuppertal Budget Total € million € 9.7 million founded by European Commission For more information see

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved DOTFIVE Project Today's state-of-the-art SiGe HBTs achieve roughly a maximum operating frequency of 300 GHz at room temperature. With Dotfive Europe is getting ahead of the RF ITRS roadmap: (

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Generations of IHP’s High-Speed HBTs Record gate delay of 2.5 ps Digital circuit speed benchmarked by ring oscillator gate delay Fastest circuit speed achieved in any Si IC technology IEDM 2008: SiGe HBT module with 2.5 ps gate delay

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Technology Vision – Future Research Topics CMOS Baseline Technology Modular extension of CMOS technologies – Diversification SiGe:C HBTRF LDMOS Flash MemoriesPassive Devices THz Devices HBTs MEMS Integration

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved MEMS integration in BiCMOS Goal: Design and fabrication of dedicated MEMS components for Radio Frequency ICs Integration of MEMS processing technique to BiCMOS Major Applications Areas RFMEMS: High-Q passives, RFMEMS Switches Deep-Silicon Etching; Substrate etching under passives, TSVs, Sensors RFMEMS Switches Si Deep-Silicon Etching, TSV Etched Region Sensors

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Technology Vision – Future Research Topics CMOS Baseline Technology Modular extension of CMOS technologies – Diversification SiGe:C HBTLDMOS Flash MemoriesPassive Devices THz Devices HBTs? MEMS Integration Optical function “Si Photonics”

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Silicon Photonics (Source: Intel) Photonics electronics functional integration on CMOS (HELIOS) EU FP7 SiLight BMBF

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Si Photonics: Waveguide Integration Waveguide preparation in IHP technology  High slope & minimal roughness  Excellent uniformuty  Small waveguide losses (<0.5dB/cm) R=200…2000µm … R=1mm R=2mm MZIs S-Bends MMIs

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved 40 Gbps TIA in SiGe Technology 1 Transimpedance Amplifier (TIA): amplifies & converts photo-current to an output voltage 40 Gbps needs ~30 GHz BW 200 GHz SiGe BiCMOS (SG25H1) Developed in cooperation w. TU Dresden / Ellinger 40 Gbps TIA in SiGe Technology 1 A 40 Gbit/s TRANSIMPEDANCE AMPLIFIER IN 0.25 μm SiGe TECHNOLOGY WITH ULTRA LOW POWER CONSUMPTION S. Hauptmann, D. Schoeniger, R. Eickhoff, F. Ellinger, and C. Scheytt, IEEE MIKON 2008

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved 40 Gbps TIA in SiGe Technology (II) 40 Gbps TIA in SiGe Technology Chip size 0.67 x 0.28 mm 2 TIA design combines High gain (73 dB  ) with very low power Simulated: dashed; measured: solid

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Silicon Photonics BiCMOS technology with optical functionality Goal: Integration electronics & waveguide optics in a qualified technology  offered to fabless design partners (customers) Optical BiCMOS 0.25/0.13 BiCMOS Technology SOI Waveguide Optics Modul Integration

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Summary 0.25 µm/0.13 µm BiCMOS platform as baseline technology for MPW and prototyping Integration of additional functionality following the “More than Moore” path

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Comparison with State-of-the-Art IHP single poly (reference) + well controlled base epitaxy + low resistances (Rücker et al. IEDM 2007) New double poly + fully self-aligned & lateral base-link => reduced capacitances + low silicide resistance + enhanced SIC E B C 100nm E B C

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved CMOS/BiCMOS – MEMS Integration BiCMOS + Microviscosimeter (Minimal invasive blood sugar sensor ): Electronics + wireless communication + sensor function Cantilever

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved RFMEMS Switches in BiCMOS Movable Membrane Supporting Beams AnchorsBottom Electrode Main application areas: Multiband circuits and GHz applications Reliability is the main concern <10 V operating voltages seems possible Etching Holes

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved RFMEMS Capacitive Switch Pull-In Region Measured 24 GHz  Pull-In voltage  ~17V  Mechanically stable up to 30V and no stiction observed  At 24 GHz  25 dB isolation  RF Characterization and reliability measurements are still on-going.

IHP Im Technologiepark Frankfurt (Oder) Germany © All rights reserved Integration Elektronik-Photonik